公开(公告)号：AT537689T

公开(公告)日：2011-12-15

申请号：AT02780307

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32 ,  H05H1/32

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

公开(公告)号：DE60038175D1

公开(公告)日：2008-04-10

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.