公开(公告)号：KR20200130473A

公开(公告)日：2020-11-18

申请号：KR20207031652

申请日：2019-04-02

Applicant: LAM RES CORP

Inventor： SHAREEF IQBAL A ,  SMITH DENNIS ,  DAUGHERTY JOHN E

IPC: G01F1/48 ,  G01F1/84

Abstract: 유체전달시스템은 N 개의제 1 밸브들을포함한다. N 개의제 1 밸브들의유입구들은 N 개의가스소스들에각각유체적으로연결되고, 여기서 N은 0보다큰 정수이다. N 개의질량유량제어기들은 N 개의제 1 밸브들중 대응하는밸브의유출구와유체로연통하는유입구를갖는 MEMS (microelectromechanical) 코리올리 (Coriolis) 유량센서를포함한다. 제 2 밸브는 MEMS 코리올리유량센서의유출구와유체로연통하는유입구및 프로세싱챔버에배치된기판을처리하기위해유체를공급하는유출구를갖는다. 제어기는 MEMS 코리올리유량센서와통신하고 MEMS 코리올리유량센서를통해흐르는유체의질량유량레이트 (mass flow rate) 및밀도중 적어도하나를결정하도록구성된다.

公开(公告)号：WO2006012021A3

公开(公告)日：2006-09-28

申请号：PCT/US2005021202

申请日：2005-06-14

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  SHARPLESS LEONARD J ,  DAUGHERTY JOHN E

Inventor： SALDANA MIGUEL A ,  SHARPLESS LEONARD J ,  DAUGHERTY JOHN E

IPC: C23C16/00 ,  C23C16/505 ,  C23C16/52 ,  F25B29/00 ,  F28F27/00 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  F28D1/06 ,  F28D2021/0077 ,  F28F2013/006 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/67069

Abstract: A temperature control device (308) for controlling temperature of an upper chamber (312) of a plasma processing apparatus (300) is described. The temperature control device includes a thermally conductive body (334) having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers (344, 348, 350, 352) in thermal communication with the thermally conductive body wherein at least one layer is a heating element (350); and a cooling element (326) connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber, a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

Abstract translation: 对用于控制等离子体处理装置（300）的上部室（312）的温度的温度控制装置（308）进行说明。 温度控制装置包括导热体（334），其具有可拆卸地与等离子体处理装置的上室连接并与热连通的外表面和外表面。 温度控制装置还包括与导热体热连通的多个热界面层（344,348,350,352），其中至少一层是加热元件（350）; 以及与所述带状导热体连接并与所述等离子体处理设备的上室热耦合的冷却元件（326），其中所述冷却元件被配置为导入流体介质。 温度控制装置还包括用于感测上部室的温度的至少一个温度传感器，用于控制加热元件和冷却元件的温度控制单元; 以及用于将温度控制装置固定到上室的闭锁机构。

公开(公告)号：JP2010283361A

公开(公告)日：2010-12-16

申请号：JP2010153473

申请日：2010-07-05

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： O'DONNELL ROBERT J ,  DAUGHERTY JOHN E

IPC: H01L21/3065 ,  H05H1/46 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205

CPC classification number: H01J37/32467 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/3255

Abstract: PROBLEM TO BE SOLVED: To provide a device component capable of minimizing erosive and corrosive properties, and contamination by a particle and/or metal in a plasma environment in a reactor, and having sufficiently high erosion resistance and corrosion resistance, including consumables and other components.
SOLUTION: A constitutive element for a semiconductor treating device includes a coating film containing thermal sprayed yttria for imparting the erosion resistance, the corrosion resistance and/or the corrosion-erosion resistance in a plasma atmosphere. The coating film protects a substrate from physical and/or chemical attacks.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够最小化腐蚀性和腐蚀性能的装置部件，以及反应器中等离子体环境中的颗粒和/或金属的污染，并且具有足够高的耐侵蚀性和耐腐蚀性，包括消耗品 和其他组件。 解决方案：半导体处理装置的构成元件包括含有热喷氧化钇的涂膜，用于赋予等离子体气氛中的耐腐蚀性，耐腐蚀性和/或耐腐蚀侵蚀性。 涂膜可保护基材免受物理和/或化学侵蚀。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：WO2006039211A3

公开(公告)日：2007-01-11

申请号：PCT/US2005034239

申请日：2005-09-23

Applicant: LAM RES CORP ,  HAO FANGLI ,  DAUGHERTY JOHN E ,  TAPPAN JAMES

Inventor： HAO FANGLI ,  DAUGHERTY JOHN E ,  TAPPAN JAMES

IPC: C23C16/455 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32082

Abstract: An integrated gas flow control assembly for connecting a gas distribution system to a multi-zone injector which includes: a first set of channels connecting the gas distribution system to a first valve assembly, a second valve assembly, a third flow assembly, and a fourth flow assembly; a second set of channels for connecting the third flow assembly and the first valve assembly to a first multi-zone injector zone; and a third set of channels for connecting the fourth flow assembly and the second valve assembly to a second multi-zone injector zone. If the first valve assembly is closed, a first multi-zone injector zone flow rate is about the flow rate through the third flow assembly, and if the second valve assembly is closed, a second multi-zone injector zone flow rate is about the flow rate through the fourth flow assembly.

Abstract translation: 一种用于将气体分配系统连接到多区域喷射器的集成气体流量控制组件，其包括：将气体分配系统连接到第一阀组件，第二阀组件，第三流量组件和第四组件的第一组通道 流量装配 第二组通道，用于将第三流动组件和第一阀组件连接到第一多区域注射器区域; 以及用于将第四流动组件和第二阀组件连接到第二多区域喷射器区域的第三组通道。 如果第一阀组件被关闭，则第一多区域喷射器区域流速约为通过第三流量组件的流速，并且如果第二阀组件关闭，则第二多区域喷射器区域流速约为流量 速率通过第四流量组件。

公开(公告)号：WO2004108617A3

公开(公告)日：2005-02-03

申请号：PCT/US2004016857

申请日：2004-05-28

Applicant: LAM RES CORP ,  KIEHLBAUCH MARK W ,  DAUGHERTY JOHN E

Inventor： KIEHLBAUCH MARK W ,  DAUGHERTY JOHN E

IPC: C03C15/00 ,  C03C19/00 ,  C03C23/00

CPC classification number: C03C23/0075 ,  C03C15/00 ,  C03C19/00 ,  C03C2204/08 ,  Y10S438/905 ,  Y10S438/906

Abstract: Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.

Abstract translation: 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

公开(公告)号：WO2004003962A2

公开(公告)日：2004-01-08

申请号：PCT/US0318502

申请日：2003-06-12

Applicant: LAM RES CORP ,  O'DONNELL ROBERT J ,  DAUGHERTY JOHN E

Inventor： O'DONNELL ROBERT J ,  DAUGHERTY JOHN E

IPC: H05H1/46 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065 ,  H01J37/00

CPC classification number: H01J37/32467 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/3255

Abstract: Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.

Abstract translation: 半导体处理装置的组件包括在喷射的含氧化钇的涂层中，其在等离子体气氛中提供侵蚀，腐蚀和/或耐腐蚀侵蚀性。 涂层可以保护基材免受物理和/或化学侵蚀。

公开(公告)号：WO2008049024B1

公开(公告)日：2008-06-05

申请号：PCT/US2007081682

申请日：2007-10-17

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

Inventor： VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了调整一组等离子体处理步骤的方法。 该方法包括在等离子体处理系统的等离子体反应器中撞击包含中性粒子和离子的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻衬底上的一组层; 将可移动均匀环定位在所述衬底周围，其中所述均匀环的底表面与所述衬底的顶表面的高度大致相同; 并在等离子体处理系统的等离子体反应器中撞击基本上由中性物质组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的该组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

公开(公告)号：WO2006036753A3

公开(公告)日：2007-01-25

申请号：PCT/US2005034034

申请日：2005-09-21

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

Inventor： VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

IPC: B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC classification number: C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/32136

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals (320a) and ions (320b) in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate (303); positioning a movable uniformity ring (302) around the substrate, including an opening (308) that is configured for directing species of plasma towards chuck (314), wherein, a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。 该方法包括在等离子体处理系统的等离子体反应器中击打包括中性粒子（320a）和离子（320b）的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻在衬底（303）上的一组层; 将可移动均匀环（302）定位在所述基底周围，包括构造成用于将等离子体的种类引导到卡盘（314）的开口（308），其中，所述均匀环的底表面与顶表面大约相同的高度 的基底; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

公开(公告)号：WO02054453A9

公开(公告)日：2003-08-21

申请号：PCT/US0143149

申请日：2001-11-21

Applicant: LAM RES CORP ,  O'DONNELL ROBERT J ,  CHANG CHRISTOPHER C ,  DAUGHERTY JOHN E

Inventor： O'DONNELL ROBERT J ,  CHANG CHRISTOPHER C ,  DAUGHERTY JOHN E

IPC: C23C30/00 ,  C23C14/08 ,  C23C16/40 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00 ,  C23C16/44

CPC classification number: H01J37/32477 ,  C23C14/083 ,  C23C16/405 ,  Y10T428/265

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括氧化锆增韧陶瓷材料作为部件的最外表面。 该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。 氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC）如氧化锆增韧的氧化铝（四方晶氧化锆颗粒分散在Al2O3中）。 在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。 为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

公开(公告)号：WO02091453A9

公开(公告)日：2003-07-03

申请号：PCT/US0214102

申请日：2002-05-03

Applicant: LAM RES CORP ,  SINGH HARMEET ,  DAUGHERTY JOHN E ,  ULLAL SAURABH J

Inventor： SINGH HARMEET ,  DAUGHERTY JOHN E ,  ULLAL SAURABH J

IPC: B08B7/00 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32467 ,  B08B7/00 ,  H01J37/321 ,  H01J37/32862 ,  H01J37/32935

Abstract: A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.

Abstract translation: 提供了一种用于清洁处理室的方法。 该方法通过将含氟气体混合物引入处理室来启动。 然后，从处理室中的含氟气体混合物产生等离子体。 接下来，建立对应于阈值离子能量的室压力，其中等离子体的离子清洁处理室的内表面而不留下残留物。 还提供了用于基本上消除通过用于半导体处理室的原位清洁工艺沉积的残余氟化铝颗粒的方法和用于执行原位清洁工艺的等离子体处理系统。