公开(公告)号：WO2009085672A3

公开(公告)日：2009-09-03

申请号：PCT/US2008086722

申请日：2008-12-12

Applicant: LAM RES CORP ,  CHEBI ROBERT ,  LIN FRANK ,  WINNICZEK JAROSLAW ,  CHEN WAN-LIN ,  MCDONNELL ERIN ,  ZHENG LILY ,  LASSIG STEPHAN ,  BOGART JEFF ,  RUSU CAMELIA

Inventor： CHEBI ROBERT ,  LIN FRANK ,  WINNICZEK JAROSLAW ,  CHEN WAN-LIN ,  MCDONNELL ERIN ,  ZHENG LILY ,  LASSIG STEPHAN ,  BOGART JEFF ,  RUSU CAMELIA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Abstract translation: 提供了一种将特征蚀刻到具有稳态气体流动的硅层中的方法。 提供包含含氧气体和含氟气体的蚀刻气体。 从蚀刻气体提供等离子体。 然后，停止蚀刻气体的流动。

公开(公告)号：AU5908600A

公开(公告)日：2001-01-31

申请号：AU5908600

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：DE60038175T2

公开(公告)日：2009-03-12

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：DE60044958D1

公开(公告)日：2010-10-21

申请号：DE60044958

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

公开(公告)号：DE60038175D1

公开(公告)日：2008-04-10

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.