公开(公告)号：WO03026364A8

公开(公告)日：2004-01-15

申请号：PCT/US0229223

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

Abstract translation: 等离子体处理器线圈可以包括欧姆地或仅反应地耦合到多个多匝，共面，交错的螺旋，并联的绕组的短路匝。 单独的电容器可以与每个绕组相关联以将电流从该绕组的一部分分流到绕组的另一部分。 每个绕组的周边部分的相邻匝之间的间隔可以不同于每个绕组的内部部分的相邻匝间的间隔。 线圈可以具有相对于线圈的RF激励波长短的长度。

公开(公告)号：WO03026364B1

公开(公告)日：2003-12-04

申请号：PCT/US0229223

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

Abstract translation: 等离子体处理器线圈可以包括欧姆地或仅反应地耦合到多个多匝，共面，交错的螺旋，并联的绕组的短路匝。 单独的电容器可以与每个绕组相关联以将电流从该绕组的一部分分流到绕组的另一部分。 每个绕组的周边部分的相邻匝之间的间隔可以不同于每个绕组的内部部分的相邻匝间的间隔。 线圈可以具有相对于线圈的RF激励波长短的长度。

公开(公告)号：WO2007149210A3

公开(公告)日：2008-02-07

申请号：PCT/US2007013159

申请日：2007-06-05

Applicant: LAM RES CORP ,  SINGH HARMEET ,  COOPERBERG DAVID ,  VAHEDI VAHID

Inventor： SINGH HARMEET ,  COOPERBERG DAVID ,  VAHEDI VAHID

IPC: H01L21/02

CPC classification number: H01L21/6708 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.

Abstract translation: 蚀刻具有改善的临界尺寸均匀性的半导体衬底的方法包括在电感耦合等离子体蚀刻室中的衬底支撑件上支撑半导体衬底; 向所述半导体衬底上的中心区域提供第一蚀刻气体; 将包含至少一种含硅气体的第二气体供应到围绕所述中心区域的所述半导体衬底上的周边区域，其中所述第二气体中的硅浓度大于所述第一蚀刻气体中的硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并且等离子体蚀刻半导体衬底的暴露表面。

公开(公告)号：WO03026364A2

公开(公告)日：2003-03-27

申请号：PCT/US0229223

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32 ,  H05H

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

Abstract translation: 等离子体处理器线圈可以包括欧姆短路或仅反应性耦合到多个多匝共平面交错螺旋并联绕组的绕组。 一个单独的电容器可以与每个绕组相关联，以将来自该绕组的一部分的电流分流到该绕组的另一部分。 每个绕组的周边部分的相邻圈之间的间距可以不同于每个绕组的内部部分的相邻圈之间的间距。 线圈可以具有相对于线圈的RF激励的波长短的长度。

公开(公告)号：JP2006074046A

公开(公告)日：2006-03-16

申请号：JP2005249201

申请日：2005-08-30

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： COOPERBERG DAVID ,  VAHEDI VAHID

IPC: H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide an extension method for a process and profile simulator algorithm used for predicting a surface profile created by a known plasma treatment. SOLUTION: This extension method for the process and profile simulator algorithm predicts the surface profile generated by a given plasma process. First, high-energy particles are tracked. After that, an ion flux generated by the high-energy particles is recorded. Local etching speed and local deposit rate are calculated from the types of neutral flux, surface chemical coverage and surface materials that are solved simultaneously. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于预测由已知等离子体处理产生的表面轮廓的过程和轮廓模拟器算法的扩展方法。 解决方案：该扩展方法用于过程和轮廓模拟器算法预测由给定等离子体过程产生的表面轮廓。 首先，跟踪高能粒子。 之后，记录高能粒子产生的离子通量。 局部蚀刻速度和局部沉积速率根据同时求解的中性通量，表面化学覆盖率和表面材料的类型计算。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2010232180A

公开(公告)日：2010-10-14

申请号：JP2010087789

申请日：2010-04-06

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: PROBLEM TO BE SOLVED: To provide a coil for a plasma treatment device, wherein a uniform plasma density can be achieved on a workpiece in a vacuum plasma chamber. SOLUTION: The coil 170 for the plasma treatment device includes a first excitation terminal 188 and second excitation terminal 190 to be connected to the first and second terminals on both sides of an RF excitation circuit. A winding 172 is connected to the first excitation terminal 188, a winding 174 is connected to the second excitation terminal 190, and a short circuit winding 186 is coupled with the winding 172 and the winding 174. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于等离子体处理装置的线圈，其中可以在真空等离子体室中的工件上实现均匀的等离子体密度。 解决方案：用于等离子体处理装置的线圈170包括第一激励端子188和第二激励端子190，以连接到RF激励电路两侧的第一和第二端子。 绕组172连接到第一激励端子188，绕组174连接到第二激励端子190，并且短路绕组186与绕组172和绕组174耦合。版权所有（C）2011 ，JPO＆INPIT

公开(公告)号：AU5908600A

公开(公告)日：2001-01-31

申请号：AU5908600

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：DE60038175T2

公开(公告)日：2009-03-12

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：DE60044958D1

公开(公告)日：2010-10-21

申请号：DE60044958

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

公开(公告)号：AU2002343368A1

公开(公告)日：2003-04-01

申请号：AU2002343368

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.