公开(公告)号：DE60034321D1

公开(公告)日：2007-05-24

申请号：DE60034321

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01J37/32 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

公开(公告)号：AU2210299A

公开(公告)日：1999-07-19

申请号：AU2210299

申请日：1998-12-31

Applicant: LAM RES CORP

Inventor： BALDWIN SCOTT K JR ,  BARNES MICHAEL S ,  HOLLAND JOHN P

IPC: H05H1/46 ,  C23C14/34 ,  H01J37/32

Abstract: A plasma processor for a workpiece includes a coil for supplying an r.f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and plasma couples the field to the plasma. In first and second embodiments, the metal member is respectively (1) a plate abutting a face of the window inside the chamber and (2) a thin film on an interior face of the window. In a third embodiment, the plate and film are both used. All embodiments help to ignite the plasma. The second embodiment increases plasma stability and prevents window clouding by ionized plasma particles. Metal from the plate is sputtered as a deposit onto the workpiece. The third embodiment enables substantially simultaneous depositing and cleaning.

公开(公告)号：AU5913699A

公开(公告)日：2000-04-17

申请号：AU5913699

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.

公开(公告)号：AU3509997A

公开(公告)日：1998-01-21

申请号：AU3509997

申请日：1997-06-27

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN P ,  DEMOS ALEX T

IPC: G02F1/1343 ,  C03C17/23 ,  C03C17/34 ,  C04B41/53 ,  C04B41/91 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L31/18 ,  H01L21/321

Abstract: A method for dry etching an indium tin oxide (ITO) layer disposed above a substrate in a low pressure plasma reactor is disclosed. The method includes a step of placing a substrate having the ITO layer into the low pressure plasma reactor, a step of introducing an etchant gas into the low pressure plasma reactor; a step of striking a plasma from the etchant gas in the low pressure plasma reactor; and a step of etching the ITO layer with the plasma.

公开(公告)号：DE60045815D1

公开(公告)日：2011-05-19

申请号：DE60045815

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  COLLISON WENLI ,  HOLLAND JOHN P

IPC: H01J37/32 ,  H01F5/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

公开(公告)号：DE60034321T2

公开(公告)日：2007-08-30

申请号：DE60034321

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01J37/32 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

公开(公告)号：AT240585T

公开(公告)日：2003-05-15

申请号：AT98966132

申请日：1998-12-31

Applicant: LAM RES CORP

Inventor： BALDWIN SCOTT K JR ,  BARNES MICHAEL S ,  HOLLAND JOHN P

IPC: H05H1/46 ,  C23C14/34 ,  H01J37/32

Abstract: A plasma processor for a workpiece includes a coil for supplying an r.f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and plasma couples the field to the plasma. In first and second embodiments, the metal member is respectively (1) a plate abutting a face of the window inside the chamber and (2) a thin film on an interior face of the window. In a third embodiment, the plate and film are both used. All embodiments help to ignite the plasma. The second embodiment increases plasma stability and prevents window clouding by ionized plasma particles. Metal from the plate is sputtered as a deposit onto the workpiece. The third embodiment enables substantially simultaneous depositing and cleaning.

公开(公告)号：AU5817999A

公开(公告)日：2000-04-17

申请号：AU5817999

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: C23C16/458 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: A glass workpiece being processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during lifting of the workpiece from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation.

公开(公告)号：CA2207154A1

公开(公告)日：1997-12-10

申请号：CA2207154

申请日：1997-06-05

Applicant: LAM RES CORP

Inventor： BARNES MICHAEL S ,  HOLLAND JOHN P

IPC: H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  C23C14/35

Abstract: A coil exciting a plasma of an r.f. vacuum plasma processor for a workpiece processed surface in a chamber includes plural arcuate radially extending turns. The coil, chamber and workpiece are arranged to produce in the chamber a magnetic flux having substantially greater density in peripheral portions of the coil and chamber than in a center portion of the chamber and coil so a substantially uniform plasma flux is incident on a processed surface of the workpiece.