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Patent Agency Ranking
公开(公告)号：WO2009158556A4
公开(公告)日：2010-06-03
申请号：PCT/US2009048747
申请日：2009-06-26
Applicant: LAM RES CORP , KEIL DOUGLAS , BOOTH JEAN-PAUL , THORGRIMSSON CHRISTOPHER
Inventor： KEIL DOUGLAS , BOOTH JEAN-PAUL , THORGRIMSSON CHRISTOPHER
CPC classification number: H01J37/32935 , H01J37/32091 , H01J37/32146 , H01J37/32926 , H01J37/32954 , H01J2237/244 , H01J2237/24564 , H01J2237/327 , H01L21/263
Abstract: A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized.
Abstract translation: 提供了一种在衬底处理期间自动表征等离子体的方法。 该方法包括收集一组过程数据，其至少包括关于电流和电压的数据。 该方法还包括识别该组过程数据的相关性范围，其中相关性范围包括过程数据组的子集。 该方法还包括确定一组种子值。 该方法还包括使用相关性范围和该组种子值来执行曲线拟合，其中曲线拟合使得能够自动表征等离子体。
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公开(公告)号：WO2008008259A2
公开(公告)日：2008-01-17
申请号：PCT/US2007015509
申请日：2007-07-06
Applicant: LAM RES CORP , KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
Inventor： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
CPC classification number: H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
Abstract: An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
Abstract translation: 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。
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公开(公告)号：SG10201500055UA
公开(公告)日：2015-02-27
申请号：SG10201500055U
申请日：2007-07-06
Applicant: LAM RES CORP
Inventor： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
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公开(公告)号：IL188279A
公开(公告)日：2012-12-31
申请号：IL18827907
申请日：2007-12-19
Applicant: LAM RES CORP , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI , KIMBALL CHRISTOPHER
Inventor： HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI , KIMBALL CHRISTOPHER
Abstract: Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may include coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.
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公开(公告)号：SG173353A1
公开(公告)日：2011-08-29
申请号：SG2011049541
申请日：2007-07-06
Applicant: LAM RES CORP
Inventor： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
Abstract: An apparatus is provided for semiconductor wafer plasma processing. Theapparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electricpotential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes. Figure 1
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