公开(公告)号：SG10201405496YA

公开(公告)日：2014-10-30

申请号：SG10201405496Y

申请日：2008-01-03

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  OUTKA DUANE ,  LIU SHENJIAN ,  DAUGHERTY JOHN

Abstract: A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.

公开(公告)号：SG190060A1

公开(公告)日：2013-06-28

申请号：SG2013032925

申请日：2011-11-01

Applicant: LAM RES CORP

Inventor： LA CROIX CLIFF ,  AVOYAN ARMEN ,  OUTKA DUANE ,  ZHOU CATHERINE ,  SHIH HONG

Abstract: In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.

公开(公告)号：SG10201503199PA

公开(公告)日：2015-06-29

申请号：SG10201503199P

申请日：2011-04-15

Applicant: LAM RES CORP

Inventor： KENWORTHY IAN ,  OUTKA DUANE ,  HAO FANGLI ,  SHARPLESS LEONARD ,  DU YIJUN

Abstract: A gas delivery system for a plasma process system such as a plasma etching system wherein inner surfaces of gas passages are coated with a corrosion-resistant material coating formed by curing a layer of fluidic precursor deposited on the inner surfaces. The coating can be formed by (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

公开(公告)号：SG10201608716QA

公开(公告)日：2016-12-29

申请号：SG10201608716Q

申请日：2008-01-03

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  OUTKA DUANE ,  LIU SHENJIAN ,  DAUGHERTY JOHN

Abstract: A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.

公开(公告)号：DE60042892D1

公开(公告)日：2009-10-15

申请号：DE60042892

申请日：2000-12-08

Applicant: LAM RES CORP

Inventor： RICHARDSON BRETT C ,  OUTKA DUANE

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/3065

Abstract: A method for cleaning and conditioning interior surfaces of a plasma chamber in which substrates such as silicon wafers are processed. The method includes cleaning the chamber such as by a wet clean or in-situ plasma clean, introducing a conditioning gas into the chamber, energizing the conditioning gas into a plasma state, depositing a polymer coating on the interior surfaces and processing a substrate. The conditioning step can be performed without a substrate such as a wafer in the chamber and the processing step can be carried out without running conditioning wafers through the chamber prior to processing production wafers. In the case of a plasma chamber used for etching aluminum, the conditioning gas can include a fluorine-containing gas, a carbon-containing gas and a chlorine-containing gas.

公开(公告)号：SG184948A1

公开(公告)日：2012-11-29

申请号：SG2012077731

申请日：2011-04-15

Applicant: LAM RES CORP

Inventor： KENWORTHY IAN ,  OUTKA DUANE ,  HAO FANGLI ,  SHARPLESS LEONARD ,  DU YIJUN

Abstract: A method of coating the inner surfaces of gas passages of a gas delivery system for a plasma process system such as a plasma etching system includes (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

公开(公告)号：SG177952A1

公开(公告)日：2012-02-28

申请号：SG2012000683

申请日：2008-01-03

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  OUTKA DUANE ,  LIU SHENJIAN ,  DAUGHERTY JOHN

Abstract: Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least I50°C in an N, environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.Figure 1

公开(公告)号：SG2013090360A

公开(公告)日：2014-07-30

申请号：SG2013090360

申请日：2013-12-03

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  SZE FAN-CHEUNG ,  MCMILLIN BRIAN ,  DAUGHERTY JOHN ,  FANG YAN ,  OUTKA DUANE ,  HUANG TUOCHUAN ,  RAMANATHAN SIVAKAMI

Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

公开(公告)号：AU2049901A

公开(公告)日：2001-07-03

申请号：AU2049901

申请日：2000-12-08

Applicant: LAM RES CORP

Inventor： RICHARDSON BRETT C ,  OUTKA DUANE

IPC: C23C16/44 ,  H01L21/3065 ,  H01J37/32

Abstract: A method for cleaning and conditioning interior surfaces of a plasma chamber in which substrates such as silicon wafers are processed. The method includes cleaning the chamber such as by a wet clean or in-situ plasma clean, introducing a conditioning gas into the chamber, energizing the conditioning gas into a plasma state, depositing a polymer coating on the interior surfaces and processing a substrate. The conditioning step can be performed without a substrate such as a wafer in the chamber and the processing step can be carried out without running conditioning wafers through the chamber prior to processing production wafers. In the case of a plasma chamber used for etching aluminum, the conditioning gas can include a fluorine-containing gas, a carbon-containing gas and a chlorine-containing gas.