公开(公告)号：US6432831B2

公开(公告)日：2002-08-13

申请号：US81497201

申请日：2001-03-23

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/302

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

Abstract: A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

Abstract translation: 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。 包括一个或多个挡板的挡板组件位于气体分配室内。 挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。 因为在靠近第一和第二气体供应出口的位置处的气体的压力较大，所以可以使喷头背面的气体压力比单个气体供应的情况更均匀。 在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。 在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

公开(公告)号：WO0215236A3

公开(公告)日：2003-09-04

申请号：PCT/US0124103

申请日：2001-07-31

Applicant: LAM RES CORP ,  HAO FANGLI ,  LENZ ERIC ,  MOREL BRUNO

Inventor： HAO FANGLI ,  LENZ ERIC ,  MOREL BRUNO

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32623

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a confinement device that provides wafer area pressure control greater than 40 %. Such a confinement device may be a fixed vertical restriction ring in addition to the confinement ring, where the confinement ring is adjustable. In the alternative, three adjustable confinement rings may be used to provide the desired wafer area pressure control.

Abstract translation: 提供等离子体处理室，其提供改进的晶片面积压力控制。 等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。 该装置的一部分将是蚀刻剂气源和排气口。 限制环限定晶片上方的区域。 晶片面积压力取决于限制环上的压降。 限制环是限制装置的一部分，其提供超过40％的晶片面积压力控制。 除了限制环之外，这种限制装置可以是固定的垂直限制环，其中限制环是可调节的。 在替代方案中，可以使用三个可调约束环来提供期望的晶片面积压力控制。

公开(公告)号：WO0103159A9

公开(公告)日：2002-05-02

申请号：PCT/US0016147

申请日：2000-06-12

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

Inventor： DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/302

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

Abstract: A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate (20) and a showerhead (22) which are secured together to define a gas distribution chamber (24) therebetween. A baffle assembly (26) including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply (40) supplying process gas to a central portion (42) of the baffle chamber and a second gas supply (44) supplying a second process gas to a peripheral region (46) of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply.

Abstract translation: 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室（24）的支撑板（20）和喷头（22）。 包括一个或多个挡板的挡板组件（26）位于气体分配室内。 所述挡板装置包括向所述挡板室的中心部分（42）供应处理气体的第一气体供应源（40）和向所述挡板室的周边区域（46）供应第二处理气体的第二气体供应源（44）。 因为在靠近第一和第二气体供应出口的位置处的气体的压力较大，所以可以使喷头背面的气体压力比单个气体供应的情况更均匀。

公开(公告)号：WO2006039211A3

公开(公告)日：2007-01-11

申请号：PCT/US2005034239

申请日：2005-09-23

Applicant: LAM RES CORP ,  HAO FANGLI ,  DAUGHERTY JOHN E ,  TAPPAN JAMES

Inventor： HAO FANGLI ,  DAUGHERTY JOHN E ,  TAPPAN JAMES

IPC: C23C16/455 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32082

Abstract: An integrated gas flow control assembly for connecting a gas distribution system to a multi-zone injector which includes: a first set of channels connecting the gas distribution system to a first valve assembly, a second valve assembly, a third flow assembly, and a fourth flow assembly; a second set of channels for connecting the third flow assembly and the first valve assembly to a first multi-zone injector zone; and a third set of channels for connecting the fourth flow assembly and the second valve assembly to a second multi-zone injector zone. If the first valve assembly is closed, a first multi-zone injector zone flow rate is about the flow rate through the third flow assembly, and if the second valve assembly is closed, a second multi-zone injector zone flow rate is about the flow rate through the fourth flow assembly.

Abstract translation: 一种用于将气体分配系统连接到多区域喷射器的集成气体流量控制组件，其包括：将气体分配系统连接到第一阀组件，第二阀组件，第三流量组件和第四组件的第一组通道 流量装配 第二组通道，用于将第三流动组件和第一阀组件连接到第一多区域注射器区域; 以及用于将第四流动组件和第二阀组件连接到第二多区域喷射器区域的第三组通道。 如果第一阀组件被关闭，则第一多区域喷射器区域流速约为通过第三流量组件的流速，并且如果第二阀组件关闭，则第二多区域喷射器区域流速约为流量 速率通过第四流量组件。

公开(公告)号：WO0150498A9

公开(公告)日：2002-12-05

申请号：PCT/US0100057

申请日：2001-01-02

Applicant: LAM RES CORP ,  HAO FANGLI ,  DAWSON KEITH

Inventor： HAO FANGLI ,  DAWSON KEITH

IPC: H05H1/46 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32568

Abstract: A linear drive assembly for moving a body associated with processing a substrate is disclosed. The linear drive assembly includes a first gear (152) and a second gear (154), which is operatively engaged with the first gear. The linear drive assembly further includes a positioning member (158) having a first portion (160) and a second portion (162). The first portion is movably coupled to the second gear in a linear direction, and the second portion is fixed to a component associated with processing a substrate.

Abstract translation: 公开了一种用于移动与处理衬底相关联的主体的线性驱动组件。 线性驱动组件包括与第一齿轮可操作地接合的第一齿轮（152）和第二齿轮（154）。 线性驱动组件还包括具有第一部分（160）和第二部分（162）的定位构件（158）。 第一部分沿直线方向可移动地联接到第二齿轮，并且第二部分固定到与处理基板相关联的部件。

公开(公告)号：WO2011133207A3

公开(公告)日：2012-02-23

申请号：PCT/US2011000683

申请日：2011-04-15

Applicant: LAM RES CORP ,  KENWORTHY IAN ,  OUTKA DUANE ,  HAO FANGLI ,  SHARPLESS LEONARD ,  DU YIJUN

Inventor： KENWORTHY IAN ,  OUTKA DUANE ,  HAO FANGLI ,  SHARPLESS LEONARD ,  DU YIJUN

IPC: C23C16/50 ,  H01L21/205 ,  H05H1/46

CPC classification number: F17D5/005 ,  B05D1/30 ,  B05D7/222 ,  F17D1/04 ,  H01J37/3244 ,  H01J37/32495 ,  H01J2237/3341 ,  H01L21/67069 ,  Y10T137/8593

Abstract: A method of coating the inner surfaces of gas passages of a gas delivery system for a plasma process system such as a plasma etching system includes (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

Abstract translation: 涂覆等离子体处理系统例如等离子体蚀刻系统的气体输送系统的气体通道的内表面的方法包括（a）使耐腐蚀材料的流体前体流过气体通道并沉积一层 流体前体，以完全涂覆气体通道的内表面; （b）从内表面除去多余的流体前体; （c）固化流体前体的沉积层以形成耐腐蚀材料涂层。

公开(公告)号：WO0101442A9

公开(公告)日：2003-01-30

申请号：PCT/US0016786

申请日：2000-06-14

Applicant: LAM RES CORP ,  HAO FANGLI ,  DHINDSA RAJINDER ,  POURHASHEMI JAVAD

Inventor： HAO FANGLI ,  DHINDSA RAJINDER ,  POURHASHEMI JAVAD

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/34

CPC classification number: C23C16/45572 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67103

Abstract: A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member (22) and a heated member such as an electrically powered showerhead electrode (20). The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface (30) of the electrode and a bottom surface (32) of the support member. A heat transfer member (36) extends between the electrode and the support member and transfers heat from an area of highest temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

Abstract translation: 用于等离子体反应室的部件包括诸如温度控制的支撑构件（22）的散热器和诸如电动喷头电极（20）的加热构件。 淋浴头电极周边地固定到支撑构件以将气体分配室封闭在电极的顶表面（30）和支撑构件的底表面（32）之间。 传热构件（36）在电极和支撑构件之间延伸并且将热量从喷淋头电极的顶表面上的最高温度积聚区域传递到支撑构件的底表面，以便控制横跨 喷头电极

公开(公告)号：DE60127232D1

公开(公告)日：2007-04-26

申请号：DE60127232

申请日：2001-01-02

Applicant: LAM RES CORP

Inventor： HAO FANGLI ,  DAWSON KEITH

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/509 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.

公开(公告)号：SG10201503199PA

公开(公告)日：2015-06-29

申请号：SG10201503199P

申请日：2011-04-15

Applicant: LAM RES CORP

Inventor： KENWORTHY IAN ,  OUTKA DUANE ,  HAO FANGLI ,  SHARPLESS LEONARD ,  DU YIJUN

Abstract: A gas delivery system for a plasma process system such as a plasma etching system wherein inner surfaces of gas passages are coated with a corrosion-resistant material coating formed by curing a layer of fluidic precursor deposited on the inner surfaces. The coating can be formed by (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.

公开(公告)号：DE60036291D1

公开(公告)日：2007-10-18

申请号：DE60036291

申请日：2000-06-12

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01L21/302

Abstract: A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.