公开(公告)号：WO2006068805A9

公开(公告)日：2006-08-24

申请号：PCT/US2005043801

申请日：2005-12-01

Applicant: LAM RES CORP ,  BENJAMIN NEIL ,  STEGER ROBERT J

Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

IPC: C23F4/00 ,  H01L21/683 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1°C per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括加热多个相应的加热区域的多个加热元件。 每个加热元件的供电功率和/或温度独立地被控制。 加热器和平坦支架的组合温度变化率每秒至少为1°C。

公开(公告)号：WO0100901A9

公开(公告)日：2002-12-27

申请号：PCT/US0040229

申请日：2000-06-14

Applicant: LAM RES CORP ,  STEGER ROBERT J ,  CHANG CHRIS

Inventor： STEGER ROBERT J ,  CHANG CHRIS

IPC: C23C18/31 ,  C23C18/36 ,  C23C18/50 ,  C23C18/54 ,  C23C28/00

CPC classification number: C23C28/321 ,  C23C18/36 ,  C23C28/00 ,  C23C28/34 ,  C23C28/345

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括金属表面，例如铝或铝合金，不锈钢或涂覆有磷镍镀层的耐火金属和外部陶瓷涂层如氧化铝，碳化硅，氮化硅 ，碳化硼或氮化铝。 磷镀镍可以通过无电镀来沉积，陶瓷涂层可以通过热喷涂沉积。 为了促进陶瓷涂层的粘附，可以在沉积陶瓷涂层之前对磷镍镀层进行表面粗糙化处理。

公开(公告)号：WO0203415A3

公开(公告)日：2002-05-23

申请号：PCT/US0118623

申请日：2001-06-08

Applicant: LAM RES CORP ,  GOTTSCHO RICHARD A ,  STEGER ROBERT J

Inventor： GOTTSCHO RICHARD A ,  STEGER ROBERT J

IPC: H05H1/46 ,  B01J4/00 ,  B01J19/08 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/3244

Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Abstract translation: 公开了一种用于在处理室内分配组件的组件传送机构。 该部件用于处理加工室内的工件。 部件输送机构包括用于将部件输出到处理室的期望区域的多个部件输出。 部件传送机构还包括耦合到多个部件输出的空间分配开关。 空间分布开关被布置用于将部件引导到多个分量输出中的至少一个。 组件传送机构还包括耦合到空间分配开关的单个组件源。 单组分源被安排用于将组分提供给空间分布开关。

公开(公告)号：MY151676A

公开(公告)日：2014-06-30

申请号：MYPI20042581

申请日：2004-06-29

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: C23C16/458 ,  C23C16/00 ,  H01L20060101 ,  H01L21/00 ,  H01L21/683

Abstract: A SUBSTRATE SUPPORT (12, 14) USEFUL FOR A PLASMA PROCESSING APPARATUS INCLUDES A METALLIC HEAT TRANSFER MEMBER (48) AND AN OVERLYING ELECTROSTATIC CHUCK (34, 50) HAVING A SUBSTRATE SUPPORT SURFACE. THE HEAT TRANSFER MEMBER (48) INCLUDES ONE OR MORE PASSAGE (76) THROUGH WHICH A LIQUID IS CIRCULATED TO HEAT AND/OR COOL THE HEAT TRANSFER MEMBER (48). THE HEAT TRANSFER MEMBER (48) HAS A LOW THERMAL MASS AND CAN BE RAPIDLY HEATED AND/OR COOLED TO A DESIRED TEMPERATURE BY THE LIQUID, SO AS TO RAPIDLY CHANGE THE SUBSTRATE TEMPERATURE DURING PLASMA PROCESSING. THE MOST ILLUSTRATIVE DRAWING IS

公开(公告)号：SG10201609601XA

公开(公告)日：2016-12-29

申请号：SG10201609601X

申请日：2005-12-01

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

IPC: C23F4/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/683

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

公开(公告)号：SG10201408008QA

公开(公告)日：2015-01-29

申请号：SG10201408008Q

申请日：2005-12-01

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

IPC: C23F4/00 ,  H01L21/683 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

公开(公告)号：AU6540700A

公开(公告)日：2001-01-31

申请号：AU6540700

申请日：2000-06-14

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J ,  CHANG CHRIS

IPC: C23C18/31 ,  C23C18/36 ,  C23C18/50 ,  C23C18/54 ,  C23C28/00

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

公开(公告)号：MY146469A

公开(公告)日：2012-08-15

申请号：MYPI20082295

申请日：2006-12-11

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: B08B3/12

Abstract: A METHOD OF CLEANING AN ESC COMPRISES IMMERSING A CERAMIC SURFACE (70) OF THE ESC (60) IN DIELECTRIC LIQUID (80); SPACING THE CERAMIC SURFACE (70) OF THE ESC (60) APART FROM A CONDUCTIVE SURFACE (50) SUCH THAT THE DIELECTRIC LIQUID (80) FILLS A GAP BETWEEN THE CERAMIC SURFACE (70) OF THE ESC (60) AND THE CONDUCTIVE SURFACE (50); AND SUBJECTING THE DIELECTRIC LIQUID (80) TO ULTRASONIC AGITATION WHILE SIMULTANEOUSLY APPLYING VOLTAGE TO THE ESC (60).

公开(公告)号：DE602004028910D1

公开(公告)日：2010-10-14

申请号：DE602004028910

申请日：2004-02-12

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: H01J37/32 ,  F27B5/14 ,  F27B17/00 ,  F27D19/00 ,  F27D21/00 ,  F27D99/00 ,  H01L20060101 ,  H01L21/00 ,  H01L21/306

公开(公告)号：DE60331557D1

公开(公告)日：2010-04-15

申请号：DE60331557

申请日：2003-09-16

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  H01L21/3065

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.