11.
    发明专利
    未知

    公开(公告)号:DE69703595D1

    公开(公告)日:2001-01-04

    申请号:DE69703595

    申请日:1997-03-12

    Abstract: The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260K, preferably above 300K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction (3) in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well (15). Among the features typically is also a chirped superlattice in the injection/relaxation region (12) that acts as a Bragg reflector to suppress escape of carriers from the lasing level into the continuum, while facilitating carrier extraction from the ground (2) state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region. An InP top cladding layer is also used to optimize heat dissipation.

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