DOUBLE WAVELENGTH QUANTUM CASCADE PHOTON SOURCE

    公开(公告)号:JPH11284287A

    公开(公告)日:1999-10-15

    申请号:JP31153598

    申请日:1998-11-02

    Abstract: PROBLEM TO BE SOLVED: To provide a device for mounting a double wavelength quantum cascade photon source. SOLUTION: A quantum cascade(QC) photon source has two different wavelengths which are both medium infrared rays normally which can be released at the same time. This can be realized by a structure of semiconductor layers in which electrons are injected into an energy level E3 and then are forcefully cascade connected to an inter medium level E2 before they reach a ground state E1 in an operation area. In these operations, photons of energy E3 -E2 (wavelength λ1 ) and E2 -E1 (wavelength λ2 ) are released. The double wavelength photon source according to the present invention can be used for various purposes, for example, for determining absorption amount of gas sample at wavelengths λ1 and λ2 and generally for determining density of a specified chemical compound in a sample.

    MATERIAL EQUIPPED WITH DISTORTION CORRECTED QC LASER

    公开(公告)号:JPH11266062A

    公开(公告)日:1999-09-28

    申请号:JP1425799

    申请日:1999-01-22

    Abstract: PROBLEM TO BE SOLVED: To provide a laser which can be used advantageously for absorption spectroscopy, such as emission monitoring. SOLUTION: A quantum cascaded(QC) laser is equipped with a multilayered core region composed of first semiconductor material layers and second semiconductor material layers, which are possessed of lattice constants a1 and a2 which are respectively and alternately arranged. The first material layer is so selected as to make its lattice constant a1 satisfy a1 >a0 [a0 denotes a lattice constant of a substrate (typically InP)], and the second material layer is so selected as to make its lattice constant a2 satisfy a2 >a0 . The materials of these layers are so selected as to satisfy |ΔEc |>520 meV, wherein ΔEc denotes the conduction band gap between the first and second material layer. The multilayered core is equipped with plural multilayer repeated units which are substantially the same. The material and thickness of the repeated unit are so selected as to provide a distortion correction for the repeat unit. It is preferable that a QC laser of this invention be equipped with a distributed feedback mechanism (e.g. Bragg lattice) so selected as to ensure the QC laser of the emission of single mode laser beams, and the QC laser can be designed so as to operate on a first atmospheric window wavelength of typically about 3 to 5 μm.

    ARTICLE FORMED OF IMPROVED SUPERLATTICE QUANTUM CASCADE LASER

    公开(公告)号:JPH11340586A

    公开(公告)日:1999-12-10

    申请号:JP12334099

    申请日:1999-04-30

    Abstract: PROBLEM TO BE SOLVED: To use a unit which is effective for monitoring contamination by collecting multiple identical repetitive units so as to form a waveguide core area, and constituting the repetitive units of injector areas and superlattice active regions. SOLUTION: A waveguide core region 13 is formed between a substrate/ lower-order optical close region 12 and a higher-order optical close region 14. The waveguide core area 13 is constituted by gathering multiple identical repetitive units. The repetitive units are constituted of injector regions which are injection/relief areas and superlattice active regions selected so that radiative carriers from a higher-order energy level to a lower-order energy level in the superlattice active region can easily be shifted. Thus, the diffusion of the carriers becomes less, an optical loss can be reduced, and the unit can used effectively be for monitoring of contamination.

    ARTICLE COMPRISING SEMICONDUCTOR LASER WHICH CAN BE MODULATED IN ELECTRIC FIELD

    公开(公告)号:JPH10275956A

    公开(公告)日:1998-10-13

    申请号:JP7633098

    申请日:1998-03-24

    Abstract: PROBLEM TO BE SOLVED: To make it possible to modulate a laser in an electric field in an IR intermediate wavelength range by a method wherein an active region is provided with a plurality of repetition units consisting of a plurality of layers, the laser oscillation transition of the laser is turned into the non-resonance tunneling transition of charge carries from a first quantum state to a second quantum state and the frequency of photons is set as the function of an electric bias. SOLUTION: In an article, which comprises a laser having first and second contacts to apply an electric bias to a semiconductor structure comprising an active region 12, the region 12 has a plurality of the same repetition units consisting of a plurality of layers in the directions intersecting orthogonal the contacts and is selected so that a laser oscillation transition of the laser is a non-resonance tunneling transition of charge carriers from a first quantum state to a second quantum state. This transition is achieved by radiation of photons of an hν of energy. Here, the (h) is the constant of a plank and the (ν) is the frequency of the photons. This frequency of the photons is the function of the electric bias, which is applied to the semiconductor structure, and the laser can be modulated in an electric field in an IR intermediate wavelength range.

    SEMICONDUCTOR LASER
    5.
    发明专利

    公开(公告)号:JP2000138420A

    公开(公告)日:2000-05-16

    申请号:JP21262699

    申请日:1999-07-27

    Abstract: PROBLEM TO BE SOLVED: To constitute a guide mode of a surface plasmon propagated along a light guide interface by forming the interface between the materials having permittivity of opposite signs in a clad area. SOLUTION: A long-wavelength semiconductor laser 10 is composed of an active area 12 and at least one guide interface 14. The interface 14 is based on a surface plasmon. The interface 14 is formed of a pair of layers 14.1 and 14.2 having permittivity of opposite signs. For example, the layer 14.1 is formed of a semiconductor having a positive permittivity and the layer 14.2 is formed of a metal having a negative permittivity. The guide mode in the active area 12 is supported at least partly by an electromagnetic surface wave (surface plasmon) at the metal-semiconductor interface 14. Since the amplification of light waves exponentially decreases in two directions perpendicular to the interface 14, no additional clad layer is required.

    LASER
    6.
    发明专利
    LASER 失效

    公开(公告)号:JPH11330629A

    公开(公告)日:1999-11-30

    申请号:JP11280899

    申请日:1999-04-20

    Abstract: PROBLEM TO BE SOLVED: To provide a microcylinder type solid-state laser having by for an elevated output power and directivity of the output beam. SOLUTION: A solid-state laser 10 comprises a cylindrical resonator 12 having a curved boundary, and solid-state active region 12.1 located in the resonator, which is capable of generating a laser beam when it is pumped appropriately. The resonator has a comparatively high effective refractive index n (n>2, generally n>3) and a deformed shape sufficient for supporting at least a liberation mode (e.g. a V-mode or bow-tie type mode; the latter is preferable for generating a directive output of a comparatively high power), and for a specific example of a III-V compound semiconductor quantum cascade microcylindrical laser device, the resonator has a shape deformed according to a flat quadrupole deformation function from a circular shape.

    DEVICE HAVING QUANTUM CASCADE LASER

    公开(公告)号:JPH10321951A

    公开(公告)日:1998-12-04

    申请号:JP4360898

    申请日:1998-02-25

    Abstract: PROBLEM TO BE SOLVED: To provide a QC(quantum cascade) laser, which operates at a temperature higher than or equal to a ultra-low temperature, performs single-mode laser radiation, and makes continuous modulations possible over a wide wavelength region. SOLUTION: A quantum cascade laser 10 is provided with a first clad region 11, a second clad region 13, a core region 12 arranged between the regions 11 and 13, electrical contacts 14, 15 for making a current flow in a laser, and a grating structure 16 for giving dispersion feedback. A grating structure 16 is so isolated from the core region such that electromagnetic radiation in a confined laser mode has intensity which is non-zero in the grating structure 16. The grating structure 16 is constituted so as to perform single-mode laser radiation.

    ARTICLE WITH QUANTUM CASCADE LASER

    公开(公告)号:JPH10144995A

    公开(公告)日:1998-05-29

    申请号:JP28032297

    申请日:1997-10-14

    Abstract: PROBLEM TO BE SOLVED: To provide a new type of QC(quantum cascade) laser. SOLUTION: A QC laser has first and second clad layers and a core region between the clad layers. The core region has a plurality of nearly equal multilayer semiconductor repeated units 11, and each repeated unit has an active region 12 and a carrier injection region 13. The active region has an superlattice region with an upper mini band 171 and a lower mini band 161, and a mini gap is formed between the upper mini band and the lower mini band. A carrier injection region is selected, so that carriers can be phase-shifted easily from the lower mini band of a certain repetition unit to the upper mini band of repetition unit at an adjacent downstream side. The active region is selected so that the wavelength ranges from 3 to 15μm.

    10.
    发明专利
    未知

    公开(公告)号:DE69903200D1

    公开(公告)日:2002-11-07

    申请号:DE69903200

    申请日:1999-01-12

    Abstract: A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a1 and a2, respectively. The first material is selected such that a1 > ao, where ao is the lattice constant of the substrate (typically InP), and the second material is selected such that a 2 ao. The materials are also selected such that the conduction band discontinuity DELTA Ec between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g., a Bragg grating) selected to ensure single mode laser emission, and can be designed for operation at a wavelength in the first atmospheric window, typically about 3-5 mu m. Such lasers can advantageously be used for absorption spectroscopy, e.g., for emission monitoring.

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