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公开(公告)号：JPH11284287A
公开(公告)日：1999-10-15
申请号：JP31153598
申请日：1998-11-02
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED Y , FAIST JEROME , HUTCHINSON ALBERT LEE , SIRTORI CARLO , SIVCO DEBORAH LEE , ALESSANDRO TOREDIKUCCHI
Abstract: PROBLEM TO BE SOLVED: To provide a device for mounting a double wavelength quantum cascade photon source. SOLUTION: A quantum cascade(QC) photon source has two different wavelengths which are both medium infrared rays normally which can be released at the same time. This can be realized by a structure of semiconductor layers in which electrons are injected into an energy level E3 and then are forcefully cascade connected to an inter medium level E2 before they reach a ground state E1 in an operation area. In these operations, photons of energy E3 -E2 (wavelength λ1 ) and E2 -E1 (wavelength λ2 ) are released. The double wavelength photon source according to the present invention can be used for various purposes, for example, for determining absorption amount of gas sample at wavelengths λ1 and λ2 and generally for determining density of a specified chemical compound in a sample.
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公开(公告)号：JPH10275956A
公开(公告)日：1998-10-13
申请号：JP7633098
申请日：1998-03-24
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED YI , FAIST JEROME , HUTCHINSON ALBERT LEE , SIRTORI CARLO , SIVCO DEBORAH LEE
Abstract: PROBLEM TO BE SOLVED: To make it possible to modulate a laser in an electric field in an IR intermediate wavelength range by a method wherein an active region is provided with a plurality of repetition units consisting of a plurality of layers, the laser oscillation transition of the laser is turned into the non-resonance tunneling transition of charge carries from a first quantum state to a second quantum state and the frequency of photons is set as the function of an electric bias. SOLUTION: In an article, which comprises a laser having first and second contacts to apply an electric bias to a semiconductor structure comprising an active region 12, the region 12 has a plurality of the same repetition units consisting of a plurality of layers in the directions intersecting orthogonal the contacts and is selected so that a laser oscillation transition of the laser is a non-resonance tunneling transition of charge carriers from a first quantum state to a second quantum state. This transition is achieved by radiation of photons of an hν of energy. Here, the (h) is the constant of a plank and the (ν) is the frequency of the photons. This frequency of the photons is the function of the electric bias, which is applied to the semiconductor structure, and the laser can be modulated in an electric field in an IR intermediate wavelength range.
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公开(公告)号：JP2000138420A
公开(公告)日：2000-05-16
申请号：JP21262699
申请日：1999-07-27
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED Y , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE , FAIST JEROME , SIRTORI CARLO
Abstract: PROBLEM TO BE SOLVED: To constitute a guide mode of a surface plasmon propagated along a light guide interface by forming the interface between the materials having permittivity of opposite signs in a clad area. SOLUTION: A long-wavelength semiconductor laser 10 is composed of an active area 12 and at least one guide interface 14. The interface 14 is based on a surface plasmon. The interface 14 is formed of a pair of layers 14.1 and 14.2 having permittivity of opposite signs. For example, the layer 14.1 is formed of a semiconductor having a positive permittivity and the layer 14.2 is formed of a metal having a negative permittivity. The guide mode in the active area 12 is supported at least partly by an electromagnetic surface wave (surface plasmon) at the metal-semiconductor interface 14. Since the amplification of light waves exponentially decreases in two directions perpendicular to the interface 14, no additional clad layer is required.
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公开(公告)号：JPH10321951A
公开(公告)日：1998-12-04
申请号：JP4360898
申请日：1998-02-25
Applicant: LUCENT TECHNOLOGIES INC
Inventor： BAILLARGEON JAMES NELSON , CAPASSO FEDERICO , CHO ALFRED YI , FAIST JEROME , GMACHI CLAIRE F , SIRTORI CARLO , SIVCO DEBORAH LEE
Abstract: PROBLEM TO BE SOLVED: To provide a QC(quantum cascade) laser, which operates at a temperature higher than or equal to a ultra-low temperature, performs single-mode laser radiation, and makes continuous modulations possible over a wide wavelength region. SOLUTION: A quantum cascade laser 10 is provided with a first clad region 11, a second clad region 13, a core region 12 arranged between the regions 11 and 13, electrical contacts 14, 15 for making a current flow in a laser, and a grating structure 16 for giving dispersion feedback. A grating structure 16 is so isolated from the core region such that electromagnetic radiation in a confined laser mode has intensity which is non-zero in the grating structure 16. The grating structure 16 is constituted so as to perform single-mode laser radiation.
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公开(公告)号：JPH10144995A
公开(公告)日：1998-05-29
申请号：JP28032297
申请日：1997-10-14
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , CHO ALFRED YI , FAIST JEROME , HUTCHINSON ALBERT LEE , SCAMARCIO GAETANO , SIRTORI CARLO , SIVCO DEBORAH LEE
Abstract: PROBLEM TO BE SOLVED: To provide a new type of QC(quantum cascade) laser. SOLUTION: A QC laser has first and second clad layers and a core region between the clad layers. The core region has a plurality of nearly equal multilayer semiconductor repeated units 11, and each repeated unit has an active region 12 and a carrier injection region 13. The active region has an superlattice region with an upper mini band 171 and a lower mini band 161, and a mini gap is formed between the upper mini band and the lower mini band. A carrier injection region is selected, so that carriers can be phase-shifted easily from the lower mini band of a certain repetition unit to the upper mini band of repetition unit at an adjacent downstream side. The active region is selected so that the wavelength ranges from 3 to 15μm.
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Patent Agency Ranking
公开(公告)号：DE69700103D1
公开(公告)日：1999-03-11
申请号：DE69700103
申请日：1997-10-28
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , FAIST JEROME , CHO ALFRED YI , HUTCHINSON ALBERT LEE , SCAMARCIO GAETANO , SIRTORI CARLO , SIVCO DEBORAH LEE
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公开(公告)号：DE69923890D1
公开(公告)日：2005-04-07
申请号：DE69923890
申请日：1999-07-20
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , YI CHO ALFRED , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE , FAIST JEROME , SIRTORI CARLO
Abstract: A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a Quantum cascade active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.
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公开(公告)号：DE69703595T2
公开(公告)日：2001-04-19
申请号：DE69703595
申请日：1997-03-12
Applicant: LUCENT TECHNOLOGIES INC
Inventor： SIRTORI CARLO , SIVCO DEBORAH LEE , CAPASSO FEDERICO , FAIST JEROME , CHO ALFRED YI , HUTCHINSON ALBERT LEE
Abstract: The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260K, preferably above 300K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction (3) in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well (15). Among the features typically is also a chirped superlattice in the injection/relaxation region (12) that acts as a Bragg reflector to suppress escape of carriers from the lasing level into the continuum, while facilitating carrier extraction from the ground (2) state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region. An InP top cladding layer is also used to optimize heat dissipation.
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公开(公告)号：DE69923890T2
公开(公告)日：2005-12-29
申请号：DE69923890
申请日：1999-07-20
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , YI CHO ALFRED , GMACHL CLAIRE F , HUTCHINSON ALBERT LEE , SIVCO DEBORAH LEE , FAIST JEROME , SIRTORI CARLO
Abstract: A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a Quantum cascade active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.
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公开(公告)号：DE69800148T2
公开(公告)日：2001-01-11
申请号：DE69800148
申请日：1998-03-17
Applicant: LUCENT TECHNOLOGIES INC
Inventor： CAPASSO FEDERICO , YI CHO ALFRED , FAIST JEROME , HUTCHINSON ALBERT LEE , SIRTORI CARLO , SIVCO DEBORAH LEE
Abstract: In a novel tunable semiconductor intersubband laser (111), the lasing transition (41) is a non-resonant tunneling transition, with the frequency of the emitted photon depending on the electrical bias across the multi-period active region (12) of the laser. The laser can be designed to emit in the mid-IR, and can advantageously be used for, e.g., trace gas sensing.
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