QUANTUM CASCADE LASER
    1.
    发明专利

    公开(公告)号:JP2001320136A

    公开(公告)日:2001-11-16

    申请号:JP2001136193

    申请日:2001-05-07

    Abstract: PROBLEM TO BE SOLVED: To provide a laser system where a self-mode synchronization is realized by laser transition itself. SOLUTION: A quantum cascade laser which utilizes inter-subband transition having a large nonlinear refractive index generates pico-second pulse of intermediate infrared light. A Kerr lens mode synchronization of QC laser is realized by nonlinearity in refractive index caused by laser transition is subband. The throttle in a cavity which is required for converting a QC self-convergence mechanism into loss modulation is realized with such QC laser waveguide as; (1) a layer with large optical loss which is separated from a semiconductor material by a relatively thin dielectrics layer, or (2) a relatively long laser waveguide. In an application example, a layer of large loss for mode connection is formed of metal, and so arranged as to constitute one of electrodes of a laser device.

    DEVICE HAVING SURFACE PLASMON LASER STRUCTURE

    公开(公告)号:JP2001291929A

    公开(公告)日:2001-10-19

    申请号:JP2001046367

    申请日:2001-02-22

    Abstract: PROBLEM TO BE SOLVED: To realize a laser of relatively long wavelength, which will not become extremely thick and still not be technically difficult to manufacture, such as like a DFB device. SOLUTION: A surface plasmon laser 10 has an active region 12 formed as an insulation ridge structure, and a metal surface layer 24 disposed in the major axis direction adjacent to the active region 12 along a ridge. According to this structure, surface plasmon propagation is formed, and power loss involved in invasion depth (skin depth) into metal is reduced greatly for a wavelength longer than 15 μm. A long wavelength laser is prepared, by using a large mode confinement in the reduced thickness of a waveguide layer (reduced from the conventional thickness of about 9 μm to 4 μm or smaller) which is obtained accordingly. The metal surface layer 24 has a metal grating (periodical) surface structure and DFB surface plasmon layer, which enables single mode light emission is formed thereby.

    LASER
    5.
    发明专利
    LASER 失效

    公开(公告)号:JPH11330629A

    公开(公告)日:1999-11-30

    申请号:JP11280899

    申请日:1999-04-20

    Abstract: PROBLEM TO BE SOLVED: To provide a microcylinder type solid-state laser having by for an elevated output power and directivity of the output beam. SOLUTION: A solid-state laser 10 comprises a cylindrical resonator 12 having a curved boundary, and solid-state active region 12.1 located in the resonator, which is capable of generating a laser beam when it is pumped appropriately. The resonator has a comparatively high effective refractive index n (n>2, generally n>3) and a deformed shape sufficient for supporting at least a liberation mode (e.g. a V-mode or bow-tie type mode; the latter is preferable for generating a directive output of a comparatively high power), and for a specific example of a III-V compound semiconductor quantum cascade microcylindrical laser device, the resonator has a shape deformed according to a flat quadrupole deformation function from a circular shape.

    7.
    发明专利
    未知

    公开(公告)号:DE69924439T2

    公开(公告)日:2006-02-16

    申请号:DE69924439

    申请日:1999-09-14

    Abstract: Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

    9.
    发明专利
    未知

    公开(公告)号:DE69923890T2

    公开(公告)日:2005-12-29

    申请号:DE69923890

    申请日:1999-07-20

    Abstract: A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a Quantum cascade active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

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