公开(公告)号：US20070007622A1

公开(公告)日：2007-01-11

申请号：US11179685

申请日：2005-07-11

Applicant: Lianjun Liu ,  Qiang Li ,  Melvy Miller ,  Sergio Pacheco

Inventor： Lianjun Liu ,  Qiang Li ,  Melvy Miller ,  Sergio Pacheco

IPC: H01L29/00

CPC classification number: H01L25/16 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/18 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48472 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03H7/38 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.

公开(公告)号：US20060141979A1

公开(公告)日：2006-06-29

申请号：US11021843

申请日：2004-12-23

Applicant: Lianjun Liu ,  Jonathan Abrokwah ,  Marcus Ray

Inventor： Lianjun Liu ,  Jonathan Abrokwah ,  Marcus Ray

IPC: H01L21/338

CPC classification number: H01L23/5227 ,  H01L23/66 ,  H01L27/016 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01P5/185 ,  H01L2924/00

Abstract: A radio frequency (“RF”) circuit configured in accordance with an embodiment of the invention is fabricated on a substrate using integrated passive device (“IPD”) process technology. The RF circuit (which may be, for example, a harmonic filter) includes at least one RF signal line section and an integrated RF coupler located proximate to the RF signal line section. The integrated RF coupler, its output and grounding contact pads, and its matching network are fabricated on the same substrate using the same IPD process technology. The integrated RF coupler provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit.

Abstract translation: 根据本发明的实施例构造的射频（“RF”）电路使用集成无源器件（“IPD”）处理技术在基板上制造。 RF电路（其可以是例如谐波滤波器）包括至少一个RF信号线部分和位于RF信号线部分附近的集成RF耦合器。 使用相同的IPD工艺技术，在同一基板上制造集成RF耦合器，其输出和接地接触焊盘及其匹配网络。 集成RF耦合器提供高效和可重复的射频耦合，而不增加射频电路的裸片占空比。

公开(公告)号：US07017652B2

公开(公告)日：2006-03-28

申请号：US10639510

申请日：2003-08-13

Applicant: Andrej J. Mitrovic ,  Lianjun Liu

Inventor： Andrej J. Mitrovic ,  Lianjun Liu

IPC: F28F7/00

CPC classification number: H01L21/67109 ,  C23C16/4586 ,  C30B25/10 ,  C30B25/12 ,  H01L21/6831 ,  H01L21/6833

Abstract: A chuck method of and apparatus (50, 150, 300) for supporting a substrate (W) during processing of the substrate, where the substrate has a lower surface (WL). The apparatus facilitates heat transfer away from the substrate during processing of the substrate. The apparatus comprises a chuck body (60) having an outer edge (70) and a rough upper surface (64U). The substrate is arranged adjacent the rough surface such that the substrate lower surface and the roughened upper surface form a gap (100) therebetween. The apparatus further includes a central gas conduit (80) passing through the chuck body. The central conduit has a second end (82b) open to the roughened upper surface and a first end opposite the second end connected to a gas source (86). The conduit is arranged such that a gas can flow through the conduit into the gap and toward the chuck body outer edge. The gas used has an atomic or molecular weight that is greater than that of helium. The surface roughness, the substrate lower surface and the flow of the heavier gas in the gap contribute to defining an accommodation coefficient α and a mean free path λ such that the ratio α/λ is higher than that of prior art apparatus.

Abstract translation: 一种用于在基板的处理期间支撑基板（W）的卡盘方法和装置（50,150,300），其中所述基板具有下表面（W L L L）。 该设备有助于在衬底处理期间从衬底传热。 该装置包括具有外边缘（70）和粗糙上表面（64U）的卡盘主体（60）。 衬底布置成与粗糙表面相邻，使得衬底下表面和粗糙化的上表面之间形成间隙（100）。 该装置还包括通过卡盘主体的中心气体导管（80）。 中心导管具有通向粗糙化的上表面的第二端（82b）和与气源（86）连接的第二端相对的第一端。 管道布置成使得气体可以通过导管流入间隙并朝向卡盘主体外边缘流动。 所使用的气体的原子或分子量大于氦气。 间隙中的表面粗糙度，底物下表面和较重气体的流动有助于确定适应系数α和平均自由程λ，使得比率α/λ比​​现有技术装置高。

公开(公告)号：US06776170B2

公开(公告)日：2004-08-17

申请号：US10279928

申请日：2002-10-25

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: B08B600

CPC classification number: H01L21/02046 ,  B08B7/00 ,  C23C14/022 ,  C23C16/0245 ,  H01J37/321 ,  H01J37/32733 ,  H01L21/67028 ,  H01L21/67069

Abstract: A method and apparatus for plasma cleaning a workpiece (W) in a plasma-cleaning chamber (20) having an interior region (30). The method comprises the steps of first, loading the workpiece into the plasma cleaning chamber interior region. The next step is pumping down the plasma cleaning chamber interior region down to a pre-determined pressure, with hydrogen as the ambient gas. The next step is forming from the hydrogen gas a plasma (36) having an ion density in the range between 1010 and 1013 cm−3 and an ion energy lower than 30 eV The last step is exposing the workpiece to the plasma for a predetermined time. The apparatus of the present invention preferably includes first and second vacuum processing chambers (20 and 120), wherein the first chamber performs the plasma cleaning of the workpiece according to the method of the invention, and the second chamber performs an additional process step, e.g., depositing a metal.

Abstract translation: 一种用于等离子体清洁具有内部区域（30）的等离子体清洁室（20）中的工件（W）的方法和装置。 该方法包括以下步骤：首先将工件装载到等离子体清洁室内部区域中。 下一步骤是将氢气作为环境气体，将等离子体清洗室内部区域下降到预定的压力。 下一步骤是从氢气形成离子密度在10 10和10 13 cm -3之间且离子能低于30eV的等离子体（36）。最后一步是将 工件到等离子体预定的时间。 本发明的装置优选地包括第一和第二真空处理室（20和120），其中第一室根据本发明的方法执行工件的等离子体清洁，并且第二室执行附加的处理步骤，例如 ，沉积金属。

公开(公告)号：US20150054502A1

公开(公告)日：2015-02-26

申请号：US14533842

申请日：2014-11-05

Applicant: Lianjun Liu ,  Philip Mather ,  Jon Slaughter

Inventor： Lianjun Liu ,  Philip Mather ,  Jon Slaughter

IPC: G01R33/04

CPC classification number: G01R33/0029 ,  G01R33/0041 ,  G01R33/04 ,  G01R33/098

Abstract: A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.

Abstract translation: 确定复位电流和第二稳定电流（分别产生复位场和第二稳定场）中的至少一个的幅度和方向，当应用于磁感测元件的阵列时，使总要求的稳定性最小化 在磁传感器运行期间的场和复位场以及外场测量。 因此，低场传感器在固定的外场操作点周围最佳地运行（具有最高的灵敏度和最低的功耗）。 固定的外部场是由传感器装置外壳（例如扬声器磁体）中的其他部件产生的，这些部件相对于描述取向信息的低（地球）磁场具有高但静止的场。

公开(公告)号：US20140374851A1

公开(公告)日：2014-12-25

申请号：US13926652

申请日：2013-06-25

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0021 ,  B81B2207/096 ,  B81C1/00134 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2203/00

Abstract: A method (60) entails providing a substrate (34) with a structural layer (30) having a thickness (40). A partial etch process is performed at locations (82) on the structural layer (30) so that a portion (92) of the structural layer (30) remains at the locations (82). An oxidation process is performed at the locations which consumes the remaining portion of the structural layer and forms an oxide (36) having a thickness (42) that is similar to the thickness (40) of the structural layer (30). The oxide (36) electrically isolates microstructures (28) in the structural layer (30), thus producing a structure (22). A device substrate (120) is coupled to the structure (22) such that a cavity (48) is formed between them. An active region (44) is formed in the device substrate (120). A short etch process can be performed to expose the microstructures from an overlying oxide layer (110).

Abstract translation: 方法（60）需要向衬底（34）提供具有厚度（40）的结构层（30）。 在结构层（30）上的位置（82）处执行部分蚀刻工艺，使得结构层（30）的一部分（92）保持在位置（82）处。 在消耗结构层的剩余部分的位置处进行氧化处理，并形成具有类似于结构层（30）的厚度（40）的厚度（42）的氧化物（36）。 氧化物（36）电隔离结构层（30）中的微结构（28），从而产生结构（22）。 器件衬底（120）耦合到结构（22），使得在它们之间形成空腔（48）。 在器件衬底（120）中形成有源区（44）。 可以进行短蚀刻工艺以从上覆的氧化物层（110）露出微结构。

公开(公告)号：US08736145B2

公开(公告)日：2014-05-27

申请号：US13128032

申请日：2009-11-25

Applicant: Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

Inventor： Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L41/06 ,  H01L41/09

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括具有至少一个具有第一热响应特性的机械层的机械结构，至少一层致动结构具有不同于第一热响应特性的第二热响应特性，以及至少具有至少 一个热补偿层。 热补偿层不同于至少一个层，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上与温度变化无关 。

公开(公告)号：US20130340525A1

公开(公告)日：2013-12-26

申请号：US14004595

申请日：2012-02-23

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: G01P15/02 ,  H01L29/84

CPC classification number: G01P15/02 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01C19/574 ,  G01C19/5769 ,  G01P15/0802 ,  G01P15/125 ,  H01L29/84

Abstract: An integrated inertial sensor and pressure sensor may include a first substrate including a first surface and a second surface; at least one or more conductive layers, formed on the first surface of the first substrate; a movable sensitive element, formed by using a first region of the first substrate; a second substrate and a third substrate, the second substrate being coupled to a surface of the conductive layer, the third substrate being coupled to the second surface of the first substrate in which the movable sensitive element of the inertial sensor is formed, and the third substrate and the second substrate are respectively arranged on opposite sides of the movable sensitive element; and a sensitive film of the pressure sensor, including at least a second region of the first substrate, or including at least one of the conductive layers on the second region of the first substrate.

Abstract translation: 集成的惯性传感器和压力传感器可以包括包括第一表面和第二表面的第一基底; 形成在所述第一基板的所述第一表面上的至少一个或多个导电层; 通过使用第一衬底的第一区域形成的可移动敏感元件; 第二基板和第三基板，所述第二基板耦合到所述导电层的表面，所述第三基板耦合到所述第一基板的形成所述惯性传感器的可移动敏感元件的第二表面，并且所述第三基板 基板和第二基板分别布置在可移动敏感元件的相对侧上; 以及压力传感器的敏感膜，包括第一衬底的至少第二区域，或者在第一衬底的第二区域上包括至少一个导电层。

公开(公告)号：US08513042B2

公开(公告)日：2013-08-20

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。

公开(公告)号：US08330239B2

公开(公告)日：2012-12-11

申请号：US12432289

申请日：2009-04-29

Applicant: Jinbang Tang ,  Lianjun Liu

Inventor： Jinbang Tang ,  Lianjun Liu

IPC: G01L9/00

CPC classification number: B81B7/0064 ,  B81B2201/0257 ,  B81B2207/017 ,  H01L24/12 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H04R19/005 ,  H04R19/04 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A device comprises a conductive substrate, a micro electromechanical systems (MEMS) structure, and a plurality of bond pads. The conductive substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed over the first side of the conductive substrate. The plurality of bond pads are formed over the first side of the conductive substrate and electrically coupled to the first side of the conductive substrate. The conductive substrate and plurality of bond pads function to provide electrostatic shielding to the MEMS structure.

Abstract translation: 一种器件包括导电衬底，微机电系统（MEMS）结构和多个接合焊盘。 导电基板具有第一侧和第二侧，第二侧与第一侧相对。 MEMS结构形成在导电衬底的第一侧上。 多个接合焊盘形成在导电衬底的第一侧上并电耦合到导电衬底的第一侧。 导电衬底和多个接合焊盘用于向MEMS结构提供静电屏蔽。