公开(公告)号：JP2001177121A

公开(公告)日：2001-06-29

申请号：JP35817999

申请日：1999-12-16

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  KIMOTO KEISUKE ,  ISHIDA KEN

IPC: H01L31/04 ,  H01L21/00 ,  H01L25/00 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/18 ,  H01L31/20

Abstract: PROBLEM TO BE SOLVED: To enable a solar cell to be enhanced in photoelectromotive force per unit area so as to provide the solar cell which is small in size and high in efficiency. SOLUTION: A cell is composed of a first conductivity semiconductor spherical substrate 11, a second conductivity semiconductor layer 12 possessed of a pn junction and formed on the spherical substrate 11, and an outer electrode 13 of transparent conductive film which is formed on the semiconductor layer 12. A large number of cells are prepared, the cells are spread in a tray, and an adhesive tape 20 is fixed on the top surfaces of the cells. The cells pasted on the adhesive tape 20 are taken out of the tray and arranged in a horizontal position to make the cells located above the tape 20, and solder powder 39 is dusted over the cells. The cells are heated to fix the cells to the adhesive tape 20 with solder 3 in a fixing process, the adhesive tape 20 is removed off, and solder is etched. An outer electrode and a second conductivity semiconductor layer are selectively removed from an adhesive tape pasted side using solder as a mask, a first conductivity semiconductor layer is exposed, and an inner electrode is formed coming into contact with the first conductivity semiconductor layer.

公开(公告)号：JP2002134766A

公开(公告)日：2002-05-10

申请号：JP2000324427

申请日：2000-10-24

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE ,  HASUO YUSUKE

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a solar cell, in which the number of production steps, workability, reliability and photoelectric conversion efficiency can be improved, and to provide a solar cell. SOLUTION: The method for producing a solar cell, using a spherical cell 10 having a second conductivity-type semiconductor layer 12 formed on the surface of a spherical substrate having a first conductivity-type semiconductor layer 11, comprises a step of laying an elastic body under a first conductive layer 13 serving as a part of a sheet-like substrate 17 and making a hole which penetrates the first conductive layer 13 but not penetrating the elastic body, a step of mounting the spherical cell 10 in the hole and pressing it to form a recess in the substrate, a step for stripping the elastic body, a step of exposing the first conductive semiconductor layer 11 of the spherical cell 10 on the rear side of the light-receiving face of the first conductive layer 13, a step for forming the insulation layer 14 of the substrate on the rear side, except the exposed part, and a step of forming the second conductive layer 15 of the substrate under the insulation layer 14, such that it is not short-circuited electrically with the first conductive layer 13 but is connected electrically with the exposed first conductivity-type semiconductor layer 11.

公开(公告)号：JP2002100792A

公开(公告)日：2002-04-05

申请号：JP2000288020

申请日：2000-09-22

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE ,  HASUO YUSUKE

IPC: H01L31/04 ,  H01L31/042

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method and a solar battery, which is low-cost and simple, and has superior light reception efficiency. SOLUTION: The manufacturing method for the solar battery, using a spherical cell obtained by forming a 2nd conductivity-type semiconductor layer on a spherical body substrate surface, having a 1st conductivity-type semiconductor layer has a stage where the spherical cell is embedded, so that almost half of it is exposed on the surface of thermoplastic resin on a metal plat; the 2nd conductivity-type semiconductor layer on the surface of the spherical cell which is not covered with the thermoplastic resin is removed; and a 1st conductive member is applied in contact with the 1st conductivity-type semiconductor layer exposed on the surface of the cell, with a stage where the spherical cell is mounted on the metal sheet and pressed, with a stage where the thermoplastic resin is removed, with a stage where the metal plate is removed and insulating resin is applied and hardened covering the top of the metal sheet and the reverse of the spherical cell, and with stage where a transparent conductive film is formed so as to cover the spherical cell and insulating resin.

公开(公告)号：JP2002050780A

公开(公告)日：2002-02-15

申请号：JP2000235296

申请日：2000-08-03

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing solar cell which can clear the process for formation of the inner electrode of the solar cell, formation of the outer electrode, and formation of an insulating layer between both electrodes with a single process, and is satisfactory in adhesion between a substrate and a spherical cell and high in reliability, and to provide the solar cell. SOLUTION: This manufacturing process includes a process of preparing a substrate 17, where circular processing is applied to expose the two layers inside a three-layered structure, consisting of the first conductive layer 17a, an insulating layer 17b, and the second conductive layer 17c; a process of preparing a spherical cell 10 which is constituted by forming a second conductivity-type semiconductor layer 11, such that one part of a first conductivity-type semiconductor layer 11 is exposed, on the surface of the spherical substrate having the first conductivity-type semiconductor layer 11; and a process of electrically connecting the exposed section of the first conductivity-type semiconductor layer 11 with the first conductive layer 17a and electrically connecting a second conductivity-type semiconductor layer 12 with the second conductive layer 17c, and forming a recess 17d such that the substrate 17 is moved along the spherical cell 10 by placing the spherical cell 10, so that the section where the first conductivity-type semiconductor layer 11 is exposed of the spherical cell 10 abuts against the section, where circular processing is applied such that the two layers within the substrate 17 is exposed.

公开(公告)号：JP2002009314A

公开(公告)日：2002-01-11

申请号：JP2000185011

申请日：2000-06-20

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  ISHIDA KEN ,  KIMOTO KEISUKE

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a solar battery with improved working efficiency and high output, and the solar battery, by solving the problem of the continuity between inner and outer electrodes in high-density packaging and improving reliability. SOLUTION: This method for manufacturing a solar battery includes a process for preparing a spherical cell where a second-conductivity type semiconductor layer is formed so that one portion of the first-conductivity-type semiconductor layer is exposed on the surface of a spherical substrate having the first- conductivity-type semiconductor layer, a process for forming a conductive substrate having a projecting part on the surface, a process for forming an insulating resin member on the projection, a process for electrically connecting the exposed part of the first-conductivity-type semiconductor layer to a conductive substrate by placing the spherical cell so that the exposed part of the first- conductivity-type semiconductor layer of the spherical cell comes into contact with the insulating resin member for pressurization, and a process for forming an outer electrode on the surface of the second-conductivity-type semiconductor layer.

公开(公告)号：JPH1148115A

公开(公告)日：1999-02-23

申请号：JP15326998

申请日：1998-06-02

Applicant: MITSUI HIGH TEC

Inventor： SAKAI NOBUO ,  ISHIDA KEN

IPC: B24B11/02 ,  B24B31/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a device for grinding and polishing a sphere with high grinding and polishing efficiency, and suitable for relatively easy production of the sphere of high sphericity. SOLUTION: This device is provided with a freely rotating and vertically movable rotary shaft 7 with a passing groove for a worked sphere formed into a spiral shape in its periphery, and a housing 11 arranged in an outer periphery of the shaft 7 and having a grinding and polishing surface in its inner surface. An outer circumferential surface of a sphere is ground and polished into a sphere of high sphericity during a period when the worked sphere is rotatingly moved through the passing groove 6 formed into the spiral shape in the outer periphery of the rotary shaft 7 while contacting with an inner surface of the housing 11 for grinding and polishing. This device is applicable not only for a semiconductor silicon sphere as the worked sphere but also for a steel sphere, ceramic sphere and resin sphere, the worked sphere having sizes of about 0.1 mm-10 mm can be ground and polished with high sphericity, and high sphericity within ±0.2 μm of a roundness error is attained in the case of a sphere of 1 mm diameter.

公开(公告)号：JP2003218064A

公开(公告)日：2003-07-31

申请号：JP2002016966

申请日：2002-01-25

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  UEDA KAZUTOSHI ,  AMANO KATSUMI ,  HIGUCHI AKIKAZU ,  TAKEDA YUJI ,  TASHIRO KEI

IPC: H01L23/12 ,  H01L21/301 ,  H01L21/56

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of semiconductor device of high productivity which can accurately cut out the shape of a semiconductor device to a uniform size. SOLUTION: In the manufacturing apparatus 10 of a semiconductor device, a semiconductor device aggregate 1S, where a semiconductor package 4t is formed is cut by a cutting means 10b and then divided among semiconductor devices 1. In the device 10, the cutting means 10b has a pressing means 10o, having a pressing part 10p pressing a non-cut place of the semiconductor device aggregate 1S and load-adjusting parts 11l, 12l which freely adjust the pressing load to the semiconductor aggregate 1S of the pressing part 10p. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001338898A

公开(公告)日：2001-12-07

申请号：JP2000159065

申请日：2000-05-29

Applicant: MITSUI HIGH TEC

Inventor： FUKUI ATSUSHI ,  ISHIDA KEN ,  KAI HIDEYOSHI ,  KIMOTO KEISUKE ,  HASUO YUSUKE ,  IRIE JUNICHI

IPC: B28D5/04 ,  H01L21/304 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having an easy manufacture and high reliability by improving its yield and to provide a semiconductor device having high reliability without needing a special manufacturing apparatus. SOLUTION: A method for cutting sphere comprises the steps of inserting the sphere such as a solar cell or the like into a groove of a V-shaped section formed to insert the sphere to be cut, accurately fixing the sphere together with a resin in the groove, and splitting the sphere into hemispheres by a cutting blade in a fixed state.

公开(公告)号：JP2001168358A

公开(公告)日：2001-06-22

申请号：JP34996999

申请日：1999-12-09

Applicant: MITSUI HIGH TEC

Inventor： ISHIDA KEN ,  WATANABE TATSUYA

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a solar battery which can be manufactured easily and can be reduced in size and increased in efficiency by increasing the electromotive force per unit area. SOLUTION: A method of manufacturing the solar battery includes a process of preparing many cells, each of which consists of a globular substrate 11 having a semiconductor layer of a first conductivity type at least on the surface, a semiconductor layer 12 of a second conductivity type so formed as to form a pn junction which is formed on the surface of the globular substrate 11, and an external electrode constituted of a transparent conductive film 13 formed on the surface of the semiconductor layer 12, a process (a) of selectively removing the external electrode and the semiconductor layer 12 by a polishing process to expose a part of the semiconductor layer of a first conductivity type, a process of placing the cells on the surface of an insulating substrate formed with through holes H at such places as to be placed with the cells so that the polished parts may abut against the through holes H, a process of fixing the cells, a process (c) of connecting the external electrodes, and a process (d) of fastening each cell on the surface of the insulating substrate while at the same time connecting the semiconductor layer of a first conductivity type of each cell to the conductor layer.

公开(公告)号：JPH11171340A

公开(公告)日：1999-06-29

申请号：JP34348597

申请日：1997-12-12

Applicant: MITSUI HIGH TEC

Inventor： SAKAI NOBUO ,  ISHIDA KEN

IPC: B65G53/04 ,  B65G51/02 ,  H01L21/673 ,  H01L21/677 ,  H01L21/683 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a non-contact type conveying device for preventing spherical articles from coming into contact with a tubular inner surface, when a spherical article such as a spherical silicon-made semiconductor element is conveyed with fluid through a tubular article such as a pipe. SOLUTION: This non-contact type conveying device for spherical articles is provided with a spiral flow generating means for generating the spiral flow of fluid and introduces the fluid spiral flow generated by the spiral flow generating means to a passage for spherical articles. In this spiral flow generating means, a conveying passage 2 is provided in the axial direction, a rotatable rotary shaft 3 in which the spiral grooves 3b are provided on the specified parts on the outer peripheral surface, and an injection pipe 3a for connecting the conveying passage 2 and the spiral grooves 3b to each other is provided on the rotary shaft 3.