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公开(公告)号：JPH0951163A
公开(公告)日：1997-02-18
申请号：JP22052695
申请日：1995-08-29
Applicant: MITSUI TOATSU CHEMICALS
Inventor： MIYASHITA TAKEHIRO , IWAMORI AKIRA , FUKUDA SHIN , FUKUDA NOBUHIRO
Abstract: PROBLEM TO BE SOLVED: To provide the flexible circuit board which has an excellent adhesion of a thin metal film and a polyimide film, and to provide the flexible circuit board which enables an excellent minute processing of the thin metal film. SOLUTION: Plasma processing is performed by the plasma containing oxygen on at least one surface of a polyimide film, and thereafter a thin metal film is formed. Thus, a flexible circuit board is obtained. Basically, the surface roughness of the polyimide film after the plasma processing is from 5nm to 100nm.
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公开(公告)号：JPH08330693A
公开(公告)日：1996-12-13
申请号：JP13771295
申请日：1995-06-05
Applicant: MITSUI TOATSU CHEMICALS
Inventor： IWAMORI AKIRA , MIYASHITA TAKEHIRO , GOTOU MASAMI , FUKUDA SHIN , FUKUDA NOBUHIRO
Abstract: PURPOSE: To prevent drop of adhesive strength of a flexible circuit board having high heat resistance by forming a cobalt layer into a specified thickness in a sputtering manner, as a metal intermediate layer of a copper polyimide film which consists of a copper or copper alloy layer, the metal intermediate layer, and a polyimide film, in this order. CONSTITUTION: Relating to a heat resistant flexible circuit substrate, a polyimide film 1, a metal cobalt intermediate layer 2 on the principal surface of the polyimide film 1, a copper thin film layer 3 on it, and a copper film 4 for circuit on it, are formed in this order. here, the cobalt layer acting as the metal intermediate layer 2 is formed, in a sputtering manner, into such a thickness as to suppress drop of adhesive strength between the metal layer and polyimide layer to within 5% even when the cobalt layer is heated at 150 deg.C for 24 hours. That is, after the polyimide film 1 in surface-treated by plasma, the cobalt layer acting as the metal intermediate layer 2 is formed into the thickness 50-500nm in the sputtering manner, and then on it, the copper or copper alloy layer 3 is formed.
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公开(公告)号：JPH07201741A
公开(公告)日：1995-08-04
申请号：JP33550393
申请日：1993-12-28
Applicant: MITSUI TOATSU CHEMICALS
Inventor： TANAKA HIROBUMI , ASHIDA YOSHINORI , MIYASHITA TAKEHIRO , YANAGAWA NORIYUKI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC: H01L21/205 , H01L31/04
Abstract: PURPOSE:To enable the photoelectric conversion efficiency of an amorphous solar battery to be improved by a method wherein a thin film forming substrate is arranged in a magnetic field formed mainly in the parallel direction with the substrate surface so as to deposit the amorphous semiconductor thin film on the substrate using a material gas in plasma state. CONSTITUTION:As for a thin film forming device, a parallel flat plate type plasma CVD device is used. Besides, a 5cm square transparent conductive substrate 3 is arranged on the side of an electrode 5 with a substrate heater in an i-layer forming chamber to be impressed with a magnetic field, on the other hand, in order to impress the magnetic field, a bar type samarium cobalt permanent magnet 2 is arranged in parallel with the substrate on the position 5cm distant from both sides of the substrate end so that a parallel magnetic field with the substrate surface may be formed. An i-type semiconductor thin film is formed into a hydride amorphous silicon thin film 5500Angstrom thick by cracking silane using high-frequency power at the substrate temperature of 180 deg.C. Successively, an n type semiconductor thin film is formed into an n-type fine crystal silicon thin film 400Angstrom thick at the substrate temperature of 180 deg.C.
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公开(公告)号：JPH09245374A
公开(公告)日：1997-09-19
申请号：JP5020096
申请日：1996-03-07
Applicant: MITSUI TOATSU CHEMICALS
Inventor： UMEHARA HIDEKI , HONDA KAZU , MIYASHITA TAKEHIRO , FUKUDA SHIN
Abstract: PROBLEM TO BE SOLVED: To obtain an optical recording medium having good reflectance and error rate, good recording property without deterioration of medium characteristics with time at a low production cost by a reflection layer essentially comprising a compd. of Ti and N and a protective layer on a recording layer. SOLUTION: An org. dye soln. is applied by spin coating to form a recording layer of 100nm thickness on a substrate having guide grooves. Then a reflection layer of 100nm thickness is formed by DC sputtering by using a TiN sputtering target having >=99% purity and Ar sputtering gas. In this process, the proportion of N in the reflection layer is controlled to 50-200 atomic % to Ti. Then a UV curing resin is applied thereon by spin coating and irradiated with UV rays to form a protective layer of 6μm thickness. Thus, by forming the reflection layer essentially comprising a compd. of Ti and N, an optical recording medium showing almost no deterioration in characteristics of the medium but having good recording property can be obtd. at a low production cost.
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Patent Agency Ranking
公开(公告)号：JPH09201900A
公开(公告)日：1997-08-05
申请号：JP9661996
申请日：1996-04-18
Applicant: MITSUI TOATSU CHEMICALS
Inventor： MIYASHITA TAKEHIRO , IWAMORI AKIRA , GOTOU MASAMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC: B32B15/08 , B32B15/088 , C23C14/20 , H01L21/203 , H05K1/03 , H05K3/38 , H05K3/46
Abstract: PROBLEM TO BE SOLVED: To prevent the peeling of a metal thin film and a polymer base material by forming an amorphous layer on at least one surface of the polymer base material, and forming a metal layer on the amorphous layer. SOLUTION: After an amorphous layer 2 is formed on a polymer of a base material 1, a copper layer of a metal layer 3 is formed. The layer 2 is formed as a film of oxide containing indium and tin as main bodies and preferably having a specific resistance of 1×10 Ωcm or more by a sputtering method in a high oxygen concentration atmosphere. As the used polymer base material 1, polyimide is preferable, and to raise the adhesive properties of the surface and the layer 2, it is preferable to use plasma treatment. Thus, the heat resistance for holding the adhesive properties of the layer 3 and the material 1 can be obtained.
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公开(公告)号：JPH08332697A
公开(公告)日：1996-12-17
申请号：JP14182795
申请日：1995-06-08
Applicant: MITSUI TOATSU CHEMICALS
Inventor： IWAMORI AKIRA , MIYASHITA TAKEHIRO , GOTOU MASAMI , FUKUDA SHIN , FUKUDA NOBUHIRO
Abstract: PURPOSE: To improve high temp. durability and to relax the deterioration of capacity at a time of secondary processing by applying at least two or more kinds of metals selected from tatanium, cobalt, molybdenum and nickel to the single surface or both surfaces of a plastic film so as to specify the content metals to form an alloy layer and specifying a ratio of titanium when titanium is added and forming a copper layer on the alloy layer. CONSTITUTION: An alloy layer 2 consisting of two or more kinds of metals selected from titanium, cobalt nickel and molybdenum is formed on the single surface or both surfaces of a plastic film 1. The content of those metals in the alloy layer 2 is 50wt.% or more and, when titanium is contained, a ratio thereof is 10-40wt.%. A copper layer 3 is formed on the alloy layer 2 to constitute a metal polymer film. A copper film layer for a circuit is formed on the alloy layer 2 to produce a flexible circuit board. By this constitution, a flexible board material good in high temp. durability and relaxing the deterioration of capacity at a time of secondary processing can be obtained.
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公开(公告)号：JPH08231717A
公开(公告)日：1996-09-10
申请号：JP3713795
申请日：1995-02-24
Applicant: MITSUI TOATSU CHEMICALS
Inventor： IWAMORI AKIRA , MIYASHITA TAKEHIRO , FUKUDA SHIN , ASHIDA YOSHINORI , FUKUDA NOBUHIRO , TAMAI MASAJI , YAMASHITA WATARU , YAMAGUCHI TERUHIRO
Abstract: PURPOSE: To obtain a flexible circuit substrate material, comprising a thermal oxidation-resistant polyimide film and a metallic thin film, excellent in high- temperature durability in adhesion of the film to the thin film and further flexibility, etc., and useful as semiconductor IC chips, etc. CONSTITUTION: This flexible printed circuit substrate comprises (A) a thermal oxidation-resistant polyimide film, comprising preferably (i) an aromatic diamine and (ii) an aromatic acid dianhydride and having carbonyl and an ether in the chemical structure and (B) a metallic thin film having preferably 10-3000nm, more preferably 100-500nm thickness. Furthermore, the thin film of the component (B) is preferably a copper film and a copper layer is preferably formed on at least one surface of the film of the component (A) preferably by a sputtering method. The component (A) preferably has a recurring unit of formula I (X and Y are each 0 or CO; X is not equal to Y), preferably e.g. a recurring unit of formula II.
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公开(公告)号：JPH08330695A
公开(公告)日：1996-12-13
申请号：JP13771495
申请日：1995-06-05
Applicant: MITSUI TOATSU CHEMICALS
Inventor： IWAMORI AKIRA , MIYASHITA TAKEHIRO , GOTOU MASAMI , FUKUDA SHIN , FUKUDA NOBUHIRO
Abstract: PURPOSE: To prevent drop of adhesive strength of a flexible circuit board having high heat resistance by forming a molybdenum layer into a specified thickness in a sputtering manner, as a metal intermediate layer of a copper polyimide film which consists of a copper or copper alloy layer, the metal intermediate layer, and a polyimide film, in this order. CONSTITUTION: Relating to a heat resistant flexible circuit substrate, a polyimide film 1, a metal molybdenum intermediate layer 2 an the principal surface of the polyimide film 1, a copper thin film layer 3 on it, and a copper film 4 for circuit on it, are formed in this order. Here, the molybdenum layer acting as the metal intermediate layer 2 is formed, in sputtering manner, into such a thickness as to suppress drop of adhesive strength between the metal layer and palyimide layer to within 5% even when the molybdenum layer is heated at 150 deg.C for 24 hours. That is, after surface treatment is performed on the polyimide film 1 by plasma, the molybdenum layer acting as the metal intermediate layer 2 is formed into the thickness 10-500nm in the sputtering manner, and then on it, the copper or copper alloy layer 3 is formed.
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公开(公告)号：JPH07183551A
公开(公告)日：1995-07-21
申请号：JP32374993
申请日：1993-12-22
Applicant: MITSUI TOATSU CHEMICALS
Inventor： MIYASHITA TAKEHIRO , TANAKA HIROBUMI , YANAGAWA NORIYUKI , ASHIDA YOSHINORI
IPC: H01L31/04
Abstract: PURPOSE:To improve a solar cell in conversion efficiency by a method wherein a specific amount of hydrogen is added to main raw material when a P-type a-Si:H semiconductor film of a large film constituting a P-type semiconductor is formed. CONSTITUTION:A substrate 110, a first electrode 102, a P-type semiconductor thin film 103, a P/I interface layer 104, an I-type semiconductor thin film 105, an N-type semiconductor thin film 106, and a second electrode 107 are laminated to form an amorphous solar cell, wherein a part of the P-type semiconductor thin film 103 is formed of a layered film composed of (P-type a-Si:H film/P-type a-c:H film)Xn(n is integer of 6 to 24). The layered film is formed on the first electrode 102 of a substrate 101 through a glow discharge decomposition method, and the P-type a-Si:H film of the layered film is formed under such conditions that main raw material represented by silicon hydride such as monosilane or disilane and silicon halide is fed at a flow rate of 1SCC, and hydrogen is fed at a flow rate of 1 to 20SCC concurrently.
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