公开(公告)号：JP2011014938A

公开(公告)日：2011-01-20

申请号：JP2010233892

申请日：2010-10-18

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BADER STEFAN ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  LUGAUER HANS-JURGEN ,  MUNDBROD-VANGEROW MANFRED ,  EISERT DOMINIK

IPC: H01L33/32 ,  H01L33/10

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting semiconductor element which is enhanced in radiation efficiency, and a method of manufacturing the light emitting semiconductor element.SOLUTION: The light emitting semiconductor element has a first main surface and a second main surface, and a semiconductor base of the semiconductor element is formed by a stack of various group III-V nitride semiconductor layers. At least part of produced radiation is passed through the first main surface to be output and coupled, and a reflector is bonded to the second main surface. A group III-V nitride layer is bonded to a junction substrate having a substrate base and an intermediate layer, and the substrate base has a larger coefficient of thermal expansion than the group III-V nitride layer, which is deposited on the intermediate layer.

Abstract translation: 要解决的问题：提供一种提高辐射效率的发光半导体元件和制造发光半导体元件的方法。解决方案：发光半导体元件具有第一主表面和第二主表面，以及 半导体元件的半导体基底由各种III-V族氮化物半导体层的叠层形成。 产生的辐射的至少一部分通过第一主表面以被输出和耦合，并且反射器被结合到第二主表面。 III-V族氮化物层被结合到具有基底和中间层的接合衬底上，并且衬底基底具有比沉积在中间层上的III-V族氮化物层更大的热膨胀系数。

公开(公告)号：JP2008085338A

公开(公告)日：2008-04-10

申请号：JP2007249242

申请日：2007-09-26

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： HAERLE VOLKER ,  HOES CHRISTINE ,  LELL ALFRED ,  STRAUS UWE

IPC: H01L33/00 ,  H01L33/50 ,  H01S5/028

CPC classification number: H01L33/44 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01S5/0282 ,  H01S5/0287 ,  H01S2301/176

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an optoelectronics device using an ion-assisted application method, and to provide the optoelectronics device.
SOLUTION: The method includes: a step (A) of providing a semiconductor layer sequence that has at least one active area, wherein the active area is suitable for emitting electromagnetic radiation during operations; and a step (B) of applying at least one layer on the first surface of the semiconductor sequence by the ion-assisted application method.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使用离子辅助施加方法制造光电装置的方法，并提供光电装置。 解决方案：该方法包括：提供具有至少一个有效区域的半导体层序列的步骤（A），其中该有源区适用于在操作期间发射电磁辐射; 以及通过离子辅助涂布法在半导体序列的第一表面上施加至少一层的工序（B）。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008072126A

公开(公告)日：2008-03-27

申请号：JP2007239993

申请日：2007-09-14

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ALBRECHT TONY ,  BRUDERL GEORG ,  HAERLE VOLKER ,  HOEPPEL LUTZ ,  STRASSBURG MARTIN

IPC: H01L33/00 ,  H01L33/24

CPC classification number: H01L33/24 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02658 ,  H01L31/02363 ,  H01L33/007 ,  H01L2924/0002 ,  H01S5/1231 ,  Y02E10/50 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronic semiconductor chip capable of extremely effectively operating the chip, and manufacturing at an extremely economical cost. SOLUTION: The electronics semiconductor chip is formed of a growth substrate (1) equipped with a structured growing surface (2) having a lot of protrudes (4) and recesses (3), and an array of active layers (5) deposited on the growing surface (2). COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够非常有效地操作芯片的光电子半导体芯片，并且以非常经济的成本制造。 解决方案：电子半导体芯片由配备有具有大量突起（4）和凹部（3）的结构化生长表面（2）的生长衬底（1）和活性层（5）阵列形成， 沉积在生长表面（2）上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007201493A

公开(公告)日：2007-08-09

申请号：JP2007072671

申请日：2007-03-20

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： BADER STEFAN ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  LUGAUER HANS-JURGEN

IPC: H01L33/00 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To obtain a III-V nitride semiconductor material, based radiation-emitting semiconductor, which allows its manufacture to be simple in terms of technology and thereby being inexpensive to be performed, and has high external quantum efficiency. SOLUTION: This radiation-emitting semiconductor chip is constituted, in which a thin-layer element is attached on a conductive substrate in a p-type side and has a contact surface in a n-type side, a buffer layer adjoining the contact surface of the thin-layer element has an AlGaN-based material, a side facing the contact surface of the buffer layer has the Al content higher than that of an side opposite to the contact surface, the buffer layer has many conductive regions made from the III-V nitride semiconductor material, and remaining regions of the buffer layer have other III-V nitride semiconductor materials, and which has many layers made from III-V nitride semiconductor materials and provided with n-type and p-type sides. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了获得能够使其制造在技术方面简单且由此廉价的III-V族氮化物半导体材料的基于辐射的发光半导体，并且具有高的外部量子效率。 解决方案：该发光半导体芯片是这样构成的，其中薄膜元件被附着在p型侧的导电性基板上，并且在n型侧具有接触面， 薄层元件的接触表面具有AlGaN基材料，与缓冲层的接触表面相对的一侧的Al含量高于与接触表面相反的一侧的Al含量，缓冲层具有许多导电区域 III-V族氮化物半导体材料和缓冲层的其余区域具有其它III-V族氮化物半导体材料，并且具有由III-V族氮化物半导体材料制成并具有n型和p型侧的多层。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004336040A

公开(公告)日：2004-11-25

申请号：JP2004134157

申请日：2004-04-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： HAHN BERTHOLD ,  HAERLE VOLKER

IPC: H01L21/20 ,  H01L21/205 ,  H01L33/00

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: PROBLEM TO BE SOLVED: To provide a method of fabricating a multitude of semiconductor chips of high quality achieving an improved yield. SOLUTION: The method comprises steps of: forming on a baseboard 1 a mask layer 3 having a plurality of windows opened to the baseboard 1; growing a semiconductor material 5 on the baseboard such that the semiconductor material is grown starting from on the windows so as to make excess growth, merge in the midway between neighboring windows beyond the mask layer and form merge regions 8 there; growing arrays of element layers on the semiconductor material; and separating the combination made up of the baseboard, the mask layer, the semiconductor material and the arrays of element layers into individual semiconductor chips along the merge regions. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004235648A

公开(公告)日：2004-08-19

申请号：JP2004021827

申请日：2004-01-29

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： HAERLE VOLKER

IPC: H01L29/16 ,  H01L21/265 ,  H01L29/161 ,  H01L29/201 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L33/10

Abstract: PROBLEM TO BE SOLVED: To provide an improved semiconductor substrate particularly for an optoelectronic device capable of reflecting emitted radiation, and thereby suppressing the absorption of the radiation that intrudes. SOLUTION: In the semiconductor substrate (1), a reflective laminar region (3) is arranged. The laminar region (3) is introduced in the semiconductor substrate (1), and the region contains different materials distributed in layers. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003234506A

公开(公告)日：2003-08-22

申请号：JP2003020947

申请日：2003-01-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： EISERT DOMINIK ,  KAISER STEPHAN ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER

IPC: H01L33/38 ,  H01S5/183 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device that uses a nitride-compound semiconductor as a base, has an improved contact metallizing section, and emits radiations. SOLUTION: In the semiconductor device that is equipped with a semiconductor body (1) having a nitride-compound semiconductor, arranges a contact metallizing section (3) on a surface (2) of the semiconductor body, and emits radiations, the contact metallizing section (3) can transmit radiations, and is at least partially covered with a conductive contact layer (4) that can transmit radiations. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003273399A

公开(公告)日：2003-09-26

申请号：JP2003047943

申请日：2003-02-25

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング

Inventor： BADER STEFAN ,  LUGAUER HANS-JURGEN ,  BRUDERL GEORG ,  HAERLE VOLKER

IPC: H01L33/10 ,  H01S5/183 ,  H01S5/323 ,  H01L33/00

CPC classification number: H01L33/105

Abstract: PROBLEM TO BE SOLVED: To offer a semiconductor device that emits radiation with vertical emission direction, which enables high spectral purity of radiation and simple electrical connection. SOLUTION: This semiconductor device that emits radiation with vertical emission direction has a substrate, a first reflector layer, a semiconductor layer equipped with a radiation-generating active layer, and a second reflector layer. The second reflector layer, together with the first reflector layer, forms a resonator whose axis represents the vertical emission direction of the semiconductor device, and is at least partly transmissive for radiation generated. The radiation passes through the second reflector layer, and is emitted out from the semiconductor device. The substrate is made of a conductive material. The first reflector layer is doped, epitaxially grown, distributed Bragg reflector layer. COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供发射具有垂直发射方向的辐射的半导体器件，其能够实现高的光谱纯度和简单的电连接。 解决方案：发射具有垂直发射方向的辐射的该半导体器件具有衬底，第一反射器层，配备有辐射发生有源层的半导体层和第二反射器层。 第二反射器层与第一反射器层一起形成其轴表示半导体器件的垂直发射方向并且对于所产生的辐射至少部分透射的谐振器。 辐射通过第二反射层，并从半导体器件发出。 基板由导电材料制成。 第一反射层被掺杂，外延生长，分布布拉格反射层。 版权所有（C）2003，JPO

公开(公告)号：WO2007121735A3

公开(公告)日：2008-03-13

申请号：PCT/DE2007000725

申请日：2007-04-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  HAERLE VOLKER ,  STRAUSS UWE ,  BRUEDERL GEORG ,  EICHLER CHRISTOPH ,  AVRAMESCU ADRIAN

Inventor： HAERLE VOLKER ,  STRAUSS UWE ,  BRUEDERL GEORG ,  EICHLER CHRISTOPH ,  AVRAMESCU ADRIAN

IPC: H01L21/20 ,  H01L21/762 ,  H01L31/00 ,  H01L33/00

CPC classification number: H01L31/184 ,  H01L21/76254 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  Y02E10/544

Abstract: Disclosed is a composite substrate (1) comprising a substrate member (2) and a wear layer (31) that is attached to the substrate member (2). A planarizing layer (4) is disposed between the wear layer (31) and the substrate member (2). Also disclosed is a method for producing a composite substrate (1), in which a planarizing layer (4) is applied to a previously provided wear substrate (3). The wear substrate (3) is attached to a substrate member (2) for the composite substrate (1). The wear substrate (3) is then separated such that a wear layer (31) of the wear substrate (3) for the composite substrate (1) remains on the substrate member (2).

Abstract translation: 本发明提供一种复合衬底（1），具有基板主体（2）和一个在基板主体（2）固定到穿层（31），其中，所述耐磨层（31）和所述基板主体（2）之间被布置在平坦化层上（4）。 此外，在其中设置（3）提供的平坦化层（4）施加一个有用的基片上制造的复合基板（1）的方法。 有用的基片（3）被用于复合基板安装在基板主体（2）（1）。 随后，将有用的衬底（3）分离出，其中，对于所述基板主体上的复合衬底（1）有用的衬底（3）的耐磨层（31）保持（2）。

公开(公告)号：WO0163709A3

公开(公告)日：2002-03-14

申请号：PCT/DE0100706

申请日：2001-02-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  LELL ALFRED ,  LUFT JOHANN ,  HAERLE VOLKER ,  HAHN BERTHOLD

Inventor： LELL ALFRED ,  LUFT JOHANN ,  HAERLE VOLKER ,  HAHN BERTHOLD

IPC: H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01S5/2232 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/32341

Abstract: According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.

Abstract translation: 根据本发明，用于电磁辐射的发射的半导体器件，特别是光，提供了具有以下特征; 用于产生辐射的有源层，其导电地连接到所述有源层的p接触，n接触，其导电地连接到所述有源层，以及用于限定的电流路径的电流限制结构，所述n个之间的电流限制结构 - 接触并且被设置在活性层。