公开(公告)号：WO2011072153A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059748

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.

Abstract translation: 提供背面接头三维太阳能电池及制造方法。 背面接触背面接合三维太阳能电池包括三维基板。 衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。 背面钝化层位于掺杂背侧发射极区域上。 连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

公开(公告)号：WO2011072179A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059783

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL ,  HARWOOD DUNCAN ,  MANSOORI MAJID ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL ,  HARWOOD DUNCAN ,  MANSOORI MAJID ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.

Abstract translation: 提供了使用半导体晶片的背接触背结太阳能电池和用于制造的方法。 背接触背结太阳能电池包括具有掺杂基极区域，光捕获正面表面和掺杂背面发射极区域的半导体晶片。 正面和背面介电层和钝化层提供增强的光俘获和内部反射。 背侧基极和发射极触点连接到金属互连上，在太阳能电池的背面形成交叉指状物和母线的金属化图案。

公开(公告)号：WO2013022479A3

公开(公告)日：2013-05-16

申请号：PCT/US2012000348

申请日：2012-08-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/03765 ,  H01L31/0392 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1812 ,  H01L31/1896 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供用于太阳能电池基板增强和电互连以及用于形成薄膜背接触太阳能电池的制造方法和结构。

公开(公告)号：EP2510550A4

公开(公告)日：2014-12-24

申请号：EP10836703

申请日：2010-12-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2817819A4

公开(公告)日：2015-09-02

申请号：EP13752284

申请日：2013-02-26

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN

IPC: H01L31/18 ,  B23K26/00 ,  H01L21/268

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供了方法和系统，用于使用激光照射从较厚的施主晶片分离和分离包含光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：WO2013126927A3

公开(公告)日：2013-11-21

申请号：PCT/US2013027826

申请日：2013-02-26

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN

IPC: H01L21/301 ,  B23K26/00 ,  H01L21/268

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：WO2012135395A3

公开(公告)日：2013-02-07

申请号：PCT/US2012031043

申请日：2012-03-28

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。

公开(公告)号：WO2011133965A3

公开(公告)日：2012-02-02

申请号：PCT/US2011033706

申请日：2011-04-23

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

Inventor： DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate- based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

Abstract translation: 所公开的主题提供了一种用于通过利用也可用作有效ARC的双层钝化方案从基于晶体硅衬底的太阳能电池中的高效表面钝化获得超低表面复合速度的方法和结构。 双层钝化由湿化学氧化物的第一薄层或薄氢化非晶硅层构成。 第二层无定形氢化氮化硅膜沉积在湿化学氧化物或非晶硅膜的顶部。 然后进行该沉积，然后进行退火以进一步增强表面钝化。

公开(公告)号：WO2013055307A3

公开(公告)日：2013-10-24

申请号：PCT/US2011046873

申请日：2011-08-05

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  TOR SAM TONE ,  CALCATERRA ANTHONY

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  TOR SAM TONE ,  CALCATERRA ANTHONY

IPC: H01L31/042 ,  H01L31/05 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02008 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供太阳能电池基底增强和电互连。 该方法包括在半导体衬底的背侧表面上沉积交叉指型的基极和发射极电极图案，在交叉指型图案上形成导电发射极插塞和基极插塞，并将具有第二叉指图案的基极和发射极电极 在导电发射极和基极插头处形成电互连。

公开(公告)号：WO2011072161A3

公开(公告)日：2011-11-10

申请号：PCT/US2010059759

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触背结太阳能电池和制造方法。 该背接触背结太阳能电池包括具有光捕获前表面的衬底，该光捕获前表面具有钝化层，掺杂的基极区域以及具有与掺杂的基极区域相反的极性的掺杂的背侧发射极区域。 发射体上的背面钝化层和图案化反射层形成光捕获背面镜。 叉指金属化图案位于太阳能电池的背面，并且永久增强为电池提供支撑。