公开(公告)号：JP2005327783A

公开(公告)日：2005-11-24

申请号：JP2004142187

申请日：2004-05-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  TAKIGUCHI YOSHIRO ,  HIRATA SHOJI

IPC: H01S5/22 ,  H01S5/00 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223

CPC classification number: H01S5/1082 ,  H01S5/0286 ,  H01S5/1014 ,  H01S5/204 ,  H01S5/2063 ,  H01S5/2072 ,  H01S5/2214 ,  H01S5/2231

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of effectively inhibiting the influence of return light.
SOLUTION: Notches 51 are formed at a pair of corners on the main light emitting side end surface 11 of a protrude 50. Light emission does not occur at regions near transverse boundaries 31B, 31C of a light emission region 31, thus making it possible to inhibit the influence of the return light, even if it may enter or intrude the region. In another embodiment on the main light emitting side end surface, a reflection coefficient of a laser beam at a region near the transverse center of the light emitting region is caused to be higher those that at the regions near the transverse boundaries. Alternately, two groove like recesses are formed on the surface of a second conductivity type semiconductor layer in the same direction, and the two groove-shaped recesses near the main light emitting side end surface may have larger widths than those of groove-shaped recesses at an intermediate position between the main light emitting side end surface and an opposite side end surface. Additionally, the light emitting region near the transverse boundaries may have an inclined plane in the main light emitting side end surface, or an impurity added region may be formed on the main light emitting side end surface so that it covers corners of the main light emitting side end surface of the protruding part.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够有效地抑制返回光的影响的半导体激光器。 解决方案：凹口51形成在突出部分50的主发光侧端面11上的一对角部处。在发光区域31的横向边界31B，31C附近的区域处不发光。因此， 即使可能进入或侵入该区域，也可以抑制返回光的影响。 在主发光侧端面的另一实施例中，激光束在发光区域的横向中心附近的区域的反射系数比横向边界附近的那些的反射系数更高。 或者，在相同方向的第二导电类型半导体层的表面上形成两个凹槽状凹部，并且主发光侧端面附近的两个凹槽状凹部的宽度可以比槽形凹部的宽度大 在主发光侧端面和相对侧端面之间的中间位置。 此外，横向边界附近的发光区域可以在主发光侧端面中具有倾斜平面，或者可以在主发光侧端面上形成杂质添加区域，使得其覆盖发光主发光侧的角部 突出部的侧端面。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005045292A

公开(公告)日：2005-02-17

申请号：JP2004327175

申请日：2004-11-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve a crystal property and electrical conductivity and also uniform the composition ratio and the p-type impurity concentration in a growth surface of a crystal. SOLUTION: First layers 11 of about 1 to 100 nm in thickness formed of AlGaN mixed crystal each and second layers 12 of about 1 to 100 nm in thickness formed of Mg doped p-type GaN each are stacked alternately to stack a plurality of layers. The first layers 11 and the second layers 12 that have aluminum contents and p-type impurity concentrations different from each other are formed in separate processes to enable fabricating a satisfactory p-type group III nitride compound semiconductor that has a property of p-type AlGaN mixed crystal as a whole. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高晶体的晶体性质和导电性，并且在晶体的生长表面中的组成比和p型杂质浓度均匀。 解决方案：由AlGaN混合晶体形成的厚度为1至100nm的第一层11和由Mg掺杂的p型GaN形成的厚度为约1至100nm的厚度为约1至100nm的第一层12交替堆叠多个 的层。 在分开的工艺中形成具有彼此不同的铝含量和p型杂质浓度的第一层11和第二层12，以便能够制造具有p型AlGaN特性的令人满意的p型III族氮化物半导体 混合晶体作为一个整体。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004172506A

公开(公告)日：2004-06-17

申请号：JP2002338782

申请日：2002-11-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  HIRATA SHOJI

IPC: H01S5/20 ,  H01S5/10 ,  H01S5/223

CPC classification number: H01S5/223 ,  H01S5/10 ,  H01S5/105 ,  H01S5/2036 ,  H01S5/2081

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device where both NFP and FFP have a uniform distribution of light intensity.
SOLUTION: The semiconductor laser device 40 has the same layered structure as a conventional broad area-type semiconductor laser device has except that regions 44 located at the sides of a light emitting region 42 of an AlGaAs active layer 18 and a p-AlGaAs clad layer 20 are two-dimensionally photonic-crystallized. A two-dimensional photonic crystal structure provided in the regions 44 located at both the sides of the light emitting region 42 has the property of hardly transmitting laser rays having a wavelength of 780 μm in the region 44 in a direction parallel with a stripe-like ridge (lengthwise direction of a resonator). Laser rays traveling in the lengthwise direction of a resonator are present only in the light emitting region 42 sandwiched between the two photonic crystal regions 44, so that laser rays are trapped in a lateral direction by the photonic crystal regions 44. The laser rays are trapped by the regions 44, whereby an optical loss occurring at both the edges of the stripe serving as a light trapping interface can be restrained, a wavefront is less curved, and both NFP and FFP have a uniform distribution of light intensity.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004087762A

公开(公告)日：2004-03-18

申请号：JP2002246366

申请日：2002-08-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NAKAJIMA HIROSHI ,  FUNATO KENJI ,  ASAZUMA YASUNORI

IPC: H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light emitting device high in In composition and also high in light emitting efficiency.
SOLUTION: The laser device 50 has a laminated structure wherein a GaN-ELO (epitaxial lateral overgrowth) structure layer 54 is built on a sapphire substrate 52 and, thereon, an n-GaN contact layer 56, n-InGaN/GaN superlattice layer 58, n-Al
0.07 Ga
0.93 N cladding layer 60, n-GaN optical guide layer 62, InGaN/InGaN-MQW active layer 64, p-GaN optical guide layer 66, p-Al
0.07 Ga
0.93 N cladding layer 68, and then a p-GaN contact layer 70 are laminated. The superlattice layer is a laminated superlattice layer wherein an n-In
0.05 Ga
0.95 N/n-GaN superlattice layer is grown for ten cycles, and its lattice constant is higher than that of the n-GaN contact layer below the superlattice layer but is less than that of the MQW active layer. The superlattice layer functions as a lattice relaxation layer for the n-Al
0.07 Ga
0.93 N cladding layer and for the n-GaN optical guide layer, and suppresses the occurrence of strain in the active layer.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003289047A

公开(公告)日：2003-10-10

申请号：JP2003108074

申请日：2003-04-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HINO TOMOKIMI ,  ASANO TAKEHARU ,  ASAZUMA YASUNORI ,  KIJIMA SATORU ,  FUNATO KENJI ,  TOMITANI SHIGETAKA

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a mono-crystal nitride system group III-V compound semiconductor with low crystal failure density and high quality, and a semiconductor device manufactured by a growth method and a method for manufacturing the semiconductor device. SOLUTION: At the time of forming a growth mask on a substrate, and selectively growing a nitride system group III-V compound semiconductor on the substrate by using the growth mask, a stripe-shaped multi-layer film at least whose mostsurface is made of nitride, and whose width is 4.8 μm or less is used as the growth mask. The growth mask may be constituted of an oxide film and a nitride film on the oxide film, constituted of a metal film and a nitride film on the metal film, constituted of an oxide film and a film made of nitride and an oxide on the oxide film and a nitride film on the film, and constituted of a first metal film and a second metal film on the first metal film and the nitride film on the second metal film. COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种生长具有低晶体失效密度和高质量的单晶氮化物系III-V族化合物半导体的方法，以及通过生长方法制造的半导体器件和用于制造 半导体器件。 解决方案：在基板上形成生长掩模时，通过使用生长掩模选择性地在衬底上生长氮化物系III-V族化合物半导体，至少具有最大表面的条形多层膜 由氮化物制成，其宽度为4.8μm以下用作生长掩模。 生长掩模可以由氧化物膜和氮化物膜构成，氧化物膜由金属膜和金属膜上的氮化物膜构成，由氧化物膜和由氧化物构成的膜和氧化物上的氧化物构成 膜和氮化物膜，并且由第一金属膜上的第一金属膜和第二金属膜以及第二金属膜上的氮化物膜构成。 版权所有（C）2004，JPO

公开(公告)号：JP2000164513A

公开(公告)日：2000-06-16

申请号：JP33640498

申请日：1998-11-26

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: C30B29/38 ,  H01L21/205 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a method for growing a III-V nitride compound semiconductor having high crystallinity by increasing nitrogen materials contributing to growth. SOLUTION: A material gas, including ammonia gas being the material of nitrogen and carrier gas, is supplied inside of a reaction tube 3. The flow of the material gas inside the reaction tube 3 is set in a direction, parallel to the growth surface of a substrate 14, and the velocity of flow of the material gas inside the reaction tube 3 is set at 2 m/s or less. Thus, ammonia can be fully heated by the delay amount of the velocity of flow, and decomposing efficiency can be improved, and the supply of the nitrogen material to the growth surface of the substrate 14 can be increased, and the evaporation of nitrogen from the III-V nitride compound semiconductor during growth can be suppressed. Also, it is desirable that the inside the reaction tube 3 be pressurized.

公开(公告)号：JP2000040856A

公开(公告)日：2000-02-08

申请号：JP20845498

申请日：1998-07-23

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  ASAZUMA YASUNORI ,  HINO TOMOKIMI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To enhance planarity of the edge of a resonator while facilitating fabrication. SOLUTION: An underlying layer 3 of GaN is formed on a sapphire substrate 1 through a buffer layer 2 before growing a coating layer 5 of GaN through a mask layer 4 having an opening 4a extended in the direction of the underlying layer 3. An n-type clad layer 7 of III nitride compound conductor, an active layer 9, and a p-type clad layer 11 are formed thereon. Direction B of a resonator is set in the direction of the underlying layer 3 and differentiated by 90 deg. from the extending direction A of mask opening and a pair of resonator edges 16, 17 are formed in the direction B of the resonator. Consequently, an emission region is not required to be aligned with the mask layer 4. Furthermore, planarity can be enhanced easily because the resonator edges 16, 17 located in the direction B of the resonator can be formed by cleavage.

公开(公告)号：JPH09252163A

公开(公告)日：1997-09-22

申请号：JP5784296

申请日：1996-03-14

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  ASAZUMA YASUNORI ,  KAWAI HIROHARU

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To enhance the emission efficiency, improve the essential emission strength of a light-emitting layer and enable the emission by the carrier injection by limiting the thickness of this emitting layer to a specified range. SOLUTION: A semiconductor light-emitting element has a light-emitting layer set to 1.5-0.3nm thick. A first buffer layer 2 of 30nm thick is grown at low temp. on a substrate 1, a second buffer layer 3 is grown to 2μm thick, a first clad layer 4 composed of a light absorptive layer to be a first lower clad layer 4A of 0.1μm thick and upper clad layer 4B of 10nm thick is epitaxially grown on the buffer layer 3, an active layer 5 of 1nm thick and second clad layer 14 of 0.1μm thick are epitaxially grown. Thus it is possible to form a carrier injection type light-emitting element and short-wavelength light-emitting element for ultraviolet regions.

公开(公告)号：JP2009088425A

公开(公告)日：2009-04-23

申请号：JP2007259429

申请日：2007-10-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI ,  ASAZUMA YASUNORI ,  TAKIGUCHI YOSHIRO

IPC: H01S5/22

CPC classification number: H01S5/22 ,  H01S5/0207 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/2036 ,  H01S5/2054 ,  H01S5/2235 ,  H01S2301/18 ,  H01S2301/206

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser whose NFP can be rendered a stable and uniform shape.
SOLUTION: A zonal ridge portion 24 is provided in the upper part of a semiconductor layer 20, and zonal protrusions 22A, extending in the extending direction of the ridge portion 24, are provided in the region corresponding to the ridge portion 24 in the semiconductor layer 20. As a result, since light emitted from an active layer 24 is guided by waveguide mechanisms, corresponding to refractive index distributions formed by the ridge portion 24 and the protrusions 22A, the interaction of both waveguide mechanisms of the ridge portion 24 and the protrusions 22A can stabilize lateral mode and suppress filament emission.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体激光器，其NFP可以形成稳定和均匀的形状。 解决方案：在半导体层20的上部设置有带状脊部24，并且在脊部24的延伸方向上延伸的区域突起22A设置在与脊部24对应的区域中 结果，由于从有源层24发射的光被波导机构引导，对应于由脊部24和突起22A形成的折射率分布，脊部24的两个波导机构的相互作用 并且突起22A可以稳定横向模式并抑制灯丝发射。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008282874A

公开(公告)日：2008-11-20

申请号：JP2007123762

申请日：2007-05-08

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  ASAZUMA YASUNORI ,  FUJISAKI SUMIKO ,  NAKAMURA HITOSHI ,  KIKAWA TAKESHI ,  TANAKA SHIGEHISA

IPC: H01S5/347

CPC classification number: H01S5/347 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02477 ,  H01L21/02505 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02631 ,  H01S5/0218 ,  H01S2301/173 ,  H01S2304/02

Abstract: PROBLEM TO BE SOLVED: To achieve a laminated structure for room-temperature continuous oscillation of a Be-containing group II-VI semiconductor laser without deterioration of crystal, using an InP substrate.
SOLUTION: The basic structure of a semiconductor laser is composed by using a lattice-matched group II-VI semiconductor containing Be on the InP substrate. In order to enhance carrier injection efficiency into an active layer, the laminated structure is composed as follows: the active layer and a clad layer are composed by a double-hetero structure having an I-type band lineup. The active layer and the clad layer that strengthen light trapping into the active layer are composed. The composition ratio of a p-type clad layer is set to Mg

Abstract translation: 要解决的问题：使用InP衬底，实现不含有晶体劣化的含Be的II-VI族半导体激光器的室温连续振荡的层叠结构。 解决方案：通过在InP衬底上使用含有Be的晶格匹配组II-VI半导体来构成半导体激光器的基本结构。 为了将载流子注入效率提高到有源层，层叠结构如下：有源层和包层由具有I型带阵列的双异质结构构成。 组成有源层和加强光陷入有源层的包层。 p型覆盖层的组成比设定为Mg <0.2。 版权所有（C）2009，JPO＆INPIT