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公开(公告)号：JP2000012970A
公开(公告)日：2000-01-14
申请号：JP17330998
申请日：1998-06-19
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA
IPC: H01L33/06 , H01L33/32 , H01L33/38 , H01L33/44 , H01S5/00 , H01S5/042 , H01S5/30 , H01S5/323 , H01S5/343 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device with a nitride base group III-V compound semiconductor which can be implemented with a high reliability. SOLUTION: A GaN base semiconductor layer, forming a laser construction, is formed on a first major surface of a sapphire substrate 1. A p-side electrode 16 is formed on the GaN base semiconductor layer higher than an n-side electrode 17 to form a GaN base semiconductor laser. In this case, grooves 12 and 13 are formed in parallel in the upper side of the GaN base semiconductor layer in a p-side electrode forming area, and a ridge 14 is formed between them. A p-side electrode 16 is formed, covering the ridge 14 and the grooves 12 and 13.
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公开(公告)号：JPH11307870A
公开(公告)日：1999-11-05
申请号：JP11256998
申请日：1998-04-22
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , KOBAYASHI TOSHIMASA , NAKAYAMA NORIKAZU , KAWAI HIROHARU
IPC: H01L21/301 , H01L21/02 , H01L21/18 , H01L21/20 , H01L21/338 , H01L21/8252 , H01L29/812 , H01L31/0232 , H01L33/48 , H01S5/00 , H01S5/02 , H01S5/323 , H01S5/343 , H01S3/18
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device using a nitride base III-V family compound semiconductor which is appropriate to a semiconductor laser, a light emitting diode and the like. SOLUTION: A GaN base semiconductor laser wafer is prepared by forming multiple semiconductor lasers on an AlGaInN base semiconductor layer 20 on a chamfered sapphire substrate 11, in such a way that they are separated from one another by grooves 24 reaching the substrate 11 and forming a p side electrode 21 and an n side electrode 22. Then the wafer is adhered to an Si wafer containing photodiodes on which photodiodes for light output monitor and solder layers 34 and 36 are formed for each pellet. The electrodes 21 and 22 are adhered to the semiconductor layers 34 and 36 respectively. The semiconductor lasers on the Si wafer containing photodiodes are separated from one another by lapping the substrate 11 from the underside up to the grooves 24 or dicing the substrate 11 from the underside. The Si wafer is separated into pellets by dicing and packages are formed.
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公开(公告)号：JPH10335637A
公开(公告)日：1998-12-18
申请号：JP14222197
申请日：1997-05-30
Applicant: SONY CORP
Inventor： KAWAI HIROHARU , IMANAGA TOSHIHARU , KOBAYASHI TOSHIMASA
IPC: H01L29/812 , H01L21/338 , H01L29/20 , H01L29/778
Abstract: PROBLEM TO BE SOLVED: To provide a hetero-junction field effect transistor which can be much enhanced in performance by a method wherein the hetero-junction field effect transistor is markedly reduced in source resistance keeping high enough in gate withstand voltage. SOLUTION: An undoped GaN layer 2, an undoped Al0.3 Ga0.7 N layer 3, an undoped GaN layer channel layer 4, an undoped Al0.15 Ga0.85 N layer spacer layer 5, an N-type Al0.15 Ga0.85 N electron feed layer 6, a gradient composition undoped Alz Ga1-z N barrier layer 7, and an N-type Al0.06 Ga0.94 N contact layer 8 are successively laminated on a C plane sapphire substrate 1 through a buffer layer, and a gate electrode 9, a source electrode 10, and a drain electrode 11 are provided onto the N-type Al0.06 Ga0.94 N contact layer 8 for the formation of an AlGaN/GaN HEMT. The gradient composition undoped Alz Ga1-z N barrier layer 7 is continuously reduced from 0.15 to 0.06 in Al composition z starting from an electron feed layer 6 side toward a contact layer 8 side.
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公开(公告)号：JP2576524B2
公开(公告)日：1997-01-29
申请号：JP21474787
申请日：1987-08-28
Applicant: SONY CORP
Inventor： ISHIKAWA HIDETO , KAMATA MIKIO , KOBAYASHI TOSHIMASA
IPC: H01L21/205
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公开(公告)号：JPH08156433A
公开(公告)日：1996-06-18
申请号：JP33164994
申请日：1994-12-09
Applicant: SONY CORP
Inventor： SATO SHUJI , KOBAYASHI TOSHIMASA
Abstract: PURPOSE: To prevent heat from radiating and dissipating to environment, enhance the heating efficiency of a recording material and contrive to enhance the flying efficiency of the recording material by a method wherein the porous structure for retaining and feeding the recording material and the heater for thermally flying the recording material are provided so as to be separated from each other on the base material provided on a recording material housing part. CONSTITUTION: On the spacer 82 provided on a recording material housing part opposite to a body to be recorded, the porous structure or the group of small columnar bodies 80 and the heater 75 for a thermally flying recording material are provided so as to be separated from each other. Thus, the heat developing from the heater 75 does not substantially fly to the porous structure. Further, since no porous structure is present above the surface of the heater 75, the heat of the heater is directly applied to the heating of dyes and consequently fully utilized. Accordingly, the heating efficiency to dyes by the heater 75 is enhanced so as to enhance the evaporating efficiency of the dyes in order to allow to improve recording performance.
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Patent Agency Ranking
公开(公告)号：JPH07285268A
公开(公告)日：1995-10-31
申请号：JP10214494
申请日：1994-04-15
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA
Abstract: PURPOSE:To always perform visually good recording not causing a white stripe or high density joint like stripe between lines even in the recording of an image having graduation properties by superposing first recording and second recording one upon another so that density is made lower than that of other region in the adjacent region of them. CONSTITUTION:In the overlap of recording dots, the terminal dot jm of an Ai line and the head dot j1 of an Ai+1 line are overlapped to set the recording density of both dots to 1/2 that of other dots. For example, in the case of shift, quantity S=0, the recording deNsity of the mutually overlapped dots jm, j1 is 1/2 the recording density of other dots not overlapped each other and, therefore, at the overlapped place, sum total recording density is same to other density and no recording density difference is generated. In the case of S=+1, dots jm-1, j1 are overlapped and the sum total recording density is only 1.5 times the recording density of other dots and, since an overlap position is expanded to a position of two dots, it is inconspicuous.
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公开(公告)号：JPH07202323A
公开(公告)日：1995-08-04
申请号：JP35409993
申请日：1993-12-27
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA
Abstract: PURPOSE:To provide a multi-beam semiconductor laser with uniform characteristics such as light emitting wavelength, light emitting efficiency and output of each laser element. CONSTITUTION:A multi-beam semiconductor laser comprises a plurality of laser elements 20 one-dimensionally or two-dimensionally arranged, while a pseudo laser element 42 which does not emit light at the time of use is provided at a region 40 outside a region where the plurality of laser elements 20 are formed. Alternatively, a swollen part or a groove is provided on the outside region.
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公开(公告)号：JPS6457711A
公开(公告)日：1989-03-06
申请号：JP21474787
申请日：1987-08-28
Applicant: SONY CORP
Inventor： ISHIKAWA HIDETO , KAMATA MIKIO , KOBAYASHI TOSHIMASA
IPC: H01L21/205
Abstract: PURPOSE:To reduce or annihilate N-type conduction on the interface of an epitaxial growth layer and an InP substrate by thermally treating the InP sub strate for thirty min or more at a growth temperature or more in a PH3 atmo sphere before growth, changing over PH3 to a reaction gas and starting vapor growth. CONSTITUTION:An InP substrate 1 is arranged onto a susceptor in a reaction tube, and the inside of the reaction tube is supplied with PH3 in a 20% hydrogen base and H2 gas as a carrier gas at normal pressure before growth. The InP substrate 1 is heated, the temperature of the substrate is kept at a vapor growth temperature of 640 deg.C, and the state is maintained for a fixed time and the supply of PH3 is stopped. The gas is changed over and the inside of the reaction tube is fed with a reaction gas composed of AsH3, trimethylpotassium and trimethylindium together with the carrier gas, and the growth of undoped GaInAs 4 is started. The holding time when the InP substrate is held in a PH3 atmosphere is increased while sheet carrier concentration No representing conduc tion on the interface 5 is reduced. When the holding time is lengthened to thirty min or more, sheet carrier concentration No can be diminished extremely or brought to zero.
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公开(公告)号：JP2008227546A
公开(公告)日：2008-09-25
申请号：JP2008161116
申请日：2008-06-20
Applicant: Sony Corp , Sumitomo Electric Ind Ltd , ソニー株式会社 , 住友電気工業株式会社
Inventor： YANASHIMA KATSUNORI , KOBAYASHI TOSHIMASA , NAKAJIMA HIROSHI , MOTOKI KENSAKU
Abstract: PROBLEM TO BE SOLVED: To provide a fabricating method of a semiconductor element in which the semiconductor element having good characteristics, high reliability and long lifetime, is easily fabricated. SOLUTION: Seeds including an amorphous layer, etc. are regularly formed on a base substrate, a nitride based III-V compound semiconductor is grown with an inclined face composed of a facet face, dislocations are propagated by the growth with the inclined face composed of the facet face retained, the dislocations are accumulated to the seed region, the substrate is removed, and a surface of the semiconductor is planarized. Accordingly, a plurality of second regions each having an average dislocation density higher than that of a first region are regularly arranged in the first region of single-crystal to fabricate a nitride based III-V compound semiconductor substrate composed of single-crystal in which C-axis is reversed in the second region about the first region. The second region is, at least, partially removed from the major substrate by etching, or the surface of the second region is covered with a coat layer like an insulation film, etc., and thereafter a nitride based III-V compound semiconductor layer for element-formation is grown. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 解决的问题：为了提供容易制造半导体元件的制造方法，其中具有良好特性，高可靠性和长寿命的半导体元件。 解决方案：包括非晶层等的种子在基底基板上规则地形成，氮化物基III-V族化合物半导体由具有由小面组成的倾斜面生长，位错通过倾斜的生长而传播 由保留的面面构成的面，将位错累积到种子区域，去除衬底，并且使半导体的表面平坦化。 因此，具有平均位错密度高于第一区域的多个第二区域规则地布置在单晶的第一区域中，以制造由单晶构成的基于氮化物的III-V族化合物半导体衬底，其中C 在第二个地区，第一个地区的相反。 第二区域通过蚀刻至少部分地从主衬底上去除，或者第二区域的表面被诸如绝缘膜等的涂层覆盖，然后用氮化物基III-V化合物半导体层 元素形成生长。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2007165725A
公开(公告)日：2007-06-28
申请号：JP2005362262
申请日：2005-12-15
Inventor： KOBAYASHI TOSHIMASA , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , YASUDA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode capable of restraining the influence of damage by dry etching at a level difference section and improving element characteristics and reliability. SOLUTION: A p-side electrode 21 and an n-side electrode 22 are provided at a first region 10A and a second region 10B, respectively. A boundary region 10C between both of them is set to a two-stage structure of a first level difference section 31 in a p-type cladding layer 13 and a second level difference section 33 straddling over a pn junction section 14 with a flat section 32 in between. The thickness of the p-type cladding layer 13 in the flat section 32 becomes small, thus preventing current from spreading laterally. Current C injected from the p-side electrode 21 enters the n-type cladding layer 12 after lowering to the flat section 32 along the first level difference section 31, and flows toward the n-side electrode 22 laterally; and the path of the current C is separated from the second level difference section 33. Even if a pn structure on the surface of the second level difference section 33 is damaged by dry etching, the generation of a leak path, or the like is restrained. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 解决的问题：提供一种半导体发光二极管，其能够通过干蚀刻来抑制电平差异部分的损伤的影响，并提高元件特性和可靠性。 解决方案：p侧电极21和n侧电极22分别设置在第一区域10A和第二区域10B。 它们之间的边界区域10C被设定为p型包覆层13中的第一电平差分部分31和跨平面部分32的pn接合部分14上的第二电平差值部分33的两级结构 之间。 平坦部32中的p型包覆层13的厚度变小，防止电流横向扩散。 从p侧电极21注入的电流C在沿着第一电平差分部分31下降到平坦部分32之后进入n型包层12，并横向向n侧电极22流动。 并且电流C的路径与第二电平差值部分33分离。即使第二电平差值部分33的表面上的pn结构被干蚀刻损坏，也可以抑制泄漏路径的产生等 。 版权所有（C）2007，JPO＆INPIT
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