公开(公告)号：DE60311095T2

公开(公告)日：2007-08-16

申请号：DE60311095

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

公开(公告)号：MY122220A

公开(公告)日：2006-03-31

申请号：MYPI9900819

申请日：1999-03-05

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  TOJO TSUYOSHI

IPC: H01L29/04 ,  H01L33/32 ,  H01L21/301 ,  H01L33/00 ,  H01L33/36 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323

Abstract: IT IS INTENDED TO PROVIDE A SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND SUBSTRATE FOR MANUFACTURING THE SEMICONDUCTOR DEVICE WHICH ENSURES THAT GOOD CLEAVABLE SURFACES BE MADE STABLY IN A SEMICONDUCTOR LAYER UNDER PRECISE CONTROL UPON MAKING EDGES OF CLEAVES SURFACES IN THE SEMICONDUCTOR LAYER STACKED ON A SUBSTRATE EVEN WHEN THE SUBSTRATE IS NON-CLEAVABLE, DIFFICULT TO CLEAVE OR DIFFERENT IN CLEAVABLE ORIENTATION FROM THE SEMICONDUCTOR LAYER. A SEMICONDUCTOR LAYER (2) MADE OF III-V COMPOUND SEMICONDUCTORS IS STACKED TO FORM A LASER STRUCTURE ON A SAPPHIRE SUBSTRATE (1). IN SELECTIVE LOCATIONS OTHER THAN THE LOCATION OF A RIDGE STRIPE PORTION (11) AND A MESA PORTION (12) ALONG A PORTION OF A SEMICONDUCTOR LAYER (2) WHERE A CAVITY EDGE (3) SHOULD BE MADE, NAMELY, IN LOCATIONS AT OPPOSITE SIDES OF THE MESA PORTION (12), STRIPE-SHAPED CLEAVAGE-ASSIST GROOVES (4) ARE MADE TO EXTEND IN PARALLEL TO THE (11-20)-ORIENTED SURFACE OF THE SEMICONDUCTOR LAYER (2), AND THE SEMICONDUCTOR LAYER (2) AND THE SAPPHIRE SUBSTRATE (1) ARE CLEAVED FROM THE CLEAVAGE-ASSIST GROOVE (4) TO MAKE THE CAVITY EDGE (3) MADE UP OF THE CLEAVABLE SURFACE OF THE SEMICONDUCTOR LAYER (2).