中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.022 seconds)

    11.
    发明专利
    未知

    公开(公告)号：DE602004021679D1

    公开(公告)日：2009-08-06

    申请号：DE602004021679

    申请日：2004-06-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： BASCO ANDREA ,  VOLPE MARIA VIVIANA ,  CASUSCELLI VALERIA ,  COFFA SALVATORE

    IPC: G01N27/12 ,  C09D11/00

    Abstract: Method for realising a sensor device (20) suitable for detecting the presence of chemical substances and comprising, as detection element, an active film (24) of metallic nanoparticles able to interact with the chemical substances to determine a variation of the global electric conductivity of the film (24). The method comprises the steps of preparing an ink comprising a solution of metallic nanoparticles, and depositing the obtained ink on a supporting substrate (26) by means of ink-jet printing so as to form the active film (24).

    12.
    发明专利
    未知

    公开(公告)号：DE602006002057D1

    公开(公告)日：2008-09-18

    申请号：DE602006002057

    申请日：2006-04-13

    Applicant: ST MICROELECTRONICS SRL

    Inventor： D ARRIGO GUISEPPE ,  COFFA SALVATORE

    IPC: H01M8/10 ,  B81C1/00

    Abstract: Fuel cells are formed in a single layer of conductive monocrystalline silicon (1), composed of a succession of electrically isolated conductive silicon bodies (1A,1B,1C,1D) separated by narrow parallel trenches etched through the whole thickness of the silicon layer. Semicells in a back-to-back configuration are formed over etch surfaces of the separation trenches. Each semicell is formed on the etch surface of one of said silicon bodies forming an elementary cell in cooperation with an opposite semicell formed on the etch surface of the next silicon body of the succession. Adjacent semicells are separated by an ion exchange membrane resin filling the separation trench between the opposite semicells constituting a solid electrolyte (PEM) of the elementary cell. Each semicell comprises a porous conductive silicon region (12,13) permeable to fluids, extending for a certain depth from the etch surface of the silicon body, at least partially coated by a non passivable metallic material. Each of said porous and fluid permeable regions communicates with a feed duct (9,10) of a fuel fluid or of oxygen gas that extends parallel to said etch surface inside the conductive silicon body (1A,1B,1C,1D). Preferably, particles of a catalytic electrode material are in contact with said ion exchange resin and with said non passivable metal coat of the porous silicon. The elementary cells thus formed in a monocrystalline silicon layer may be configured as an array of monopolar cells or as a battery of cells in series by realizing a different distribution of the fluid reagents through the pairs of parallel ducts (9,10) formed inside the conductive silicon bodies of (1A,1B,1C,1D).

    14.
    发明专利
    未知

    公开(公告)号：DE60112726D1

    公开(公告)日：2005-09-22

    申请号：DE60112726

    申请日：2001-05-15

    Applicant: ST MICROELECTRONICS SRL

    Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  FRISINA FERRUCCIO

    IPC: H01L31/0288 ,  H01L31/107

    Abstract: The high-gain photodetector (1) is formed in a semiconductor-material body (5) which houses a PN junction (13, 14) and a sensitive region (19) that is doped with rare earths, for example erbium (Er). The PN junction (13, 14) forms an acceleration and gain region (13, 14) separate from the sensitive region (19). The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region (19). Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction (13-14), which is transparent to light, can be captured by an erbium ion in the sensitive region (19), so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

    15.
    发明专利
    未知

    公开(公告)号：DE60016245D1

    公开(公告)日：2004-12-30

    申请号：DE60016245

    申请日：2000-09-01

    Applicant: ST MICROELECTRONICS SRL

    Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  SAGGIO MARIO ,  FRISINA FERRUCCIO

    IPC: H01S3/16 ,  H01S5/30 ,  H01S5/32

    Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.

    16.
    发明专利
    未知

    公开(公告)号：DE69941456D1

    公开(公告)日：2009-11-05

    申请号：DE69941456

    申请日：1999-12-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： D ARRIGO GIUSEPPE ,  SPINELLA CORRADO ,  COFFA SALVATORE ,  ARENA GIUSEPPE ,  CAMALLERI MARCO

    IPC: H01L21/762 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/321

    Abstract: This invention relates to a method of fabricating a SOI (Silicon-On-Insulator) wafer suitable to manufacture electronic semiconductor devices and including a substrate of monocrystalline silicon with a top surface, and a doped buried region in the substrate. The method comprises at least one step of forming trench-like openings extended from the substrate surface down to the buried region, and comprises: a selective etching step carried out through said openings to change said buried region of monocrystalline silicon into porous silicon; a subsequent step of oxidising the buried region that has been changed into porous silicon, to obtain an insulating portion of said SOI wafer.

    20.
    发明专利
    未知

    公开(公告)号：DE60112726T2

    公开(公告)日：2006-06-14

    申请号：DE60112726

    申请日：2001-05-15

    Applicant: ST MICROELECTRONICS SRL

    Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  FRISINA FERRUCCIO

    IPC: H01L31/107 ,  H01L31/0288

    Abstract: The high-gain photodetector (1) is formed in a semiconductor-material body (5) which houses a PN junction (13, 14) and a sensitive region (19) that is doped with rare earths, for example erbium (Er). The PN junction (13, 14) forms an acceleration and gain region (13, 14) separate from the sensitive region (19). The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region (19). Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction (13-14), which is transparent to light, can be captured by an erbium ion in the sensitive region (19), so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

Patent Agency Ranking