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公开(公告)号：JP2000164841A
公开(公告)日：2000-06-16
申请号：JP28993099
申请日：1999-10-12
Applicant: ST MICROELECTRONICS SRL
Inventor： POLMAN ALBERT , HAMELIN NICHOLAS , KIK PETER , COFFA SALVATORE , FRISINA FERRUCCIO , SAGGIO MARIO
IPC: H01L31/108 , G01J1/02 , G02B6/12 , H01L27/14 , H01L31/0352 , H01L31/103
Abstract: PROBLEM TO BE SOLVED: To obtain an infrared detector device, exhibiting a high efficiency of transfer from infrared radiation to electrical currents by a semiconductor material. SOLUTION: An infrared detector device 1 is provided with P-N junctions 9 and 10, comprised of a first semiconductor material region 9 doped with rare-earth ions and a second semiconductor material region 10 of the oppositely doped type P. The detector device extends on a substrate 2, including a reflection layer 4 and is provided with a wave guide path 8 formed by protrusions whose range in horizontal direction is demarcated by an oxide a region for protection and containment. At least a part of the wave guide path 8 is formed of a P-N junction and has an end to which light to be detected is supplied. The detector device has electrodes 18 and 13, placed on the side and top of the wave guide path 8 and enables efficient collection of charge carriers produced by optical transfer.
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2.发明申请METHOD FOR GROWING CARBON NANOTUBES HAVING A PREDETERMINED CHIRALITY 审中-公开用于生长具有预定的CHIRALITY的碳纳米管的方法
公开(公告)号：WO2006117196A2
公开(公告)日：2006-11-09
申请号：PCT/EP2006004109
申请日：2006-05-03
Applicant: ST MICROELECTRONICS SRL , VINCIGUERRA VINCENZO , BEVILACQUA MARIA FORTUNA , BUONOCORE FRANCESCO , COFFA SALVATORE
CPC classification number: H01L21/76838 , B82Y30/00 , B82Y40/00 , C01B32/16 , H01L23/53276 , H01L2924/0002 , H01L2924/00
Abstract: Method for growing carbon nanotubes having a determined chirality, comprising the steps of fragmentation of at least one initial carbon nanotube (30) having a determined chirality with obtainment of at least two portions, or seeds, of carbon nanotube, each one having one free growth end (32); supply of atoms of carbon (33) with autocatalyst addition of the atoms of carbon (33) at the free end (32) of each portion of nanotube (30) to determine an elongation, or growth, of the nanotube (30).
Abstract translation: 具有确定的手性生长碳纳米管的方法，包括以下步骤：至少一个具有确定的手性的至少一个初始碳纳米管（30），获得至少两个部分的碳纳米管，或每个具有一个自由生长的碳纳米管的种子 结束（32）; 在每个纳米管（30）的每个部分的自由端（32）处自动催化加入碳原子（33）以提供碳（33）的原子，以确定纳米管（30）的伸长或生长。
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3.发明申请SEMICONDUCTOR DEVICE FOR ELECTRO-OPTIC APPLICATIONS, METHOD FOR MANUFACTURING SAID DEVICE AND CORRESPONDING SEMICONDUCTOR LASER DEVICE 审中-公开用于电光应用的半导体器件，用于制造上述器件的方法和相应的半导体激光器件
公开(公告)号：WO0117074A9
公开(公告)日：2002-09-06
申请号：PCT/EP0008555
申请日：2000-09-01
Applicant: ST MICROELECTRONICS SRL , COFFA SALVATORE , LIBERTINO SEBANIA , SAGGIO MARIO , FRISINA FERRUCCIO
Inventor： COFFA SALVATORE , LIBERTINO SEBANIA , SAGGIO MARIO , FRISINA FERRUCCIO
CPC classification number: H01S5/305 , H01S3/1603 , H01S3/1628 , H01S5/3004 , H01S5/3068
Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.
Abstract translation: 本发明涉及一种用于电光应用的半导体器件，该半导体器件包括集成在半导体衬底上的至少掺杂稀土离子的P / N结。 该器件可以用于在硅中获得激光作用，并且包括在所述P / N结的耗尽层中并入稀土离子，特别是铒离子的腔或波导和相干光源。 结可以是例如双极晶体管的基极 - 集电极区域并且被反向偏置。
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公开(公告)号：ITMI20070271A1
公开(公告)日：2008-08-15
申请号：ITMI20070271
申请日：2007-02-14
Applicant: ST MICROELECTRONICS SRL
Inventor： CALIGIORE CLAUDIA , COFFA SALVATORE , CUSCUNA MASSIMO , FORTUNATO GUGLIELMO , LEONARDI SALVATORE , MARIUCCI LUIGI
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5.发明专利
公开(公告)号：IT1392995B1
公开(公告)日：2012-04-02
申请号：ITVA20090011
申请日：2009-02-12
Applicant: ST MICROELECTRONICS SRL
Inventor： COFFA SALVATORE , LOMBARDO SALVATORE
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Patent Agency Ranking
公开(公告)号：ITVA20050034A1
公开(公告)日：2006-11-14
申请号：ITVA20050034
申请日：2005-05-13
Applicant: ST MICROELECTRONICS SRL
Inventor： COFFA SALVATORE , D ARRIGO GIUSEPPE
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7.发明专利
公开(公告)号：ITVA20090011A1
公开(公告)日：2010-08-13
申请号：ITVA20090011
申请日：2009-02-12
Applicant: ST MICROELECTRONICS SRL
Inventor： COFFA SALVATORE , LOMBARDO SALVATORE
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公开(公告)号：DE60307614T2
公开(公告)日：2007-08-16
申请号：DE60307614
申请日：2003-06-30
Applicant: ST MICROELECTRONICS SRL
Inventor： NAPOLITANO TERESA , COFFA SALVATORE , MENSITIERI GIUSEPPE , BORRIELLO ANNA , NICOLAIS LUIGI
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公开(公告)号：ITMI20050797A1
公开(公告)日：2006-11-04
申请号：ITMI20050797
申请日：2005-05-03
Applicant: ST MICROELECTRONICS SRL
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公开(公告)号：ITVA20000042A1
公开(公告)日：2002-06-17
申请号：ITVA20000042
申请日：2000-12-15
Applicant: ST MICROELECTRONICS SRL
Inventor： COFFA SALVATORE , OCCHIPINTI LUIGI
IPC: G01L9/00
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