14.
    发明专利
    未知

    公开(公告)号:ITVA20010035A1

    公开(公告)日:2003-04-16

    申请号:ITVA20010035

    申请日:2001-10-16

    Abstract: A nonvolatile memory device is operable in a serial mode and in a parallel mode. The architecture of the nonvolatile memory device is based upon the structure already present in a standard memory, but includes certain modifications. These modifications include the addition of a timing state machine for the various memory access phases (i.e., writing and reading data), and the addition of an internal bus and related logic circuits for disabling the internal address bus of the standard memory when the nonvolatile memory device operates in the serial mode.

    17.
    发明专利
    未知

    公开(公告)号:ITVA20020012D0

    公开(公告)日:2002-02-08

    申请号:ITVA20020012

    申请日:2002-02-08

    Abstract: A memory device includes an internal address bus, and first and second internal data busses. A memory receives from the internal address bus an address of memory data to be read, and transfers read memory data in blocks of N bits to the first internal data bus. An address storing circuit is coupled to the internal address bus for storing the address of the memory data to be read. An array of latches is coupled to the first internal data bus for storing the read memory data received therefrom. The array of latches includes two banks of latches. Each bank has N latches and is controlled independently from the other bank by respective commands, and each bank stores bits present on the first internal data bus upon receiving the respective commands. The second internal data bus is also connected to the array of latches. A state machine is connected to the array of latches for providing the respective commands for control thereof, and the state machine alternates the respective commands for commanding a consecutive reading of the blocks of N bits.

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