-
11.
公开(公告)号:ITTO20120412A1
公开(公告)日:2013-11-09
申请号:ITTO20120412
申请日:2012-05-08
Applicant: ST MICROELECTRONICS SRL
Inventor: CASTAGNA GIUSEPPE , DE SANDRE GUIDO , PERRONI MAURIZIO FRANCESCO , POLIZZI SALVATORE
-
公开(公告)号:DE60229649D1
公开(公告)日:2008-12-11
申请号:DE60229649
申请日:2002-11-28
Applicant: ST MICROELECTRONICS SRL
Inventor: POLIZZI SALVATORE , PERRONI MAURIZIO FRANCESCO , SCHILLACI PAOLINO
-
公开(公告)号:ITVA20020045A1
公开(公告)日:2004-03-07
申请号:ITVA20020045
申请日:2002-09-06
Applicant: ST MICROELECTRONICS SRL
Inventor: PERRONI MAURIZIO FRANCESCO , POLIZZI SALVATORE , SCAVUZZO ANDREA
IPC: G06F13/42 , G06K20060101 , G11C5/06
-
公开(公告)号:ITVA20010035A1
公开(公告)日:2003-04-16
申请号:ITVA20010035
申请日:2001-10-16
Applicant: ST MICROELECTRONICS SRL
Inventor: PERRONI MAURIZIO , POLIZZI SALVATORE , POLI SALVATORE
Abstract: A nonvolatile memory device is operable in a serial mode and in a parallel mode. The architecture of the nonvolatile memory device is based upon the structure already present in a standard memory, but includes certain modifications. These modifications include the addition of a timing state machine for the various memory access phases (i.e., writing and reading data), and the addition of an internal bus and related logic circuits for disabling the internal address bus of the standard memory when the nonvolatile memory device operates in the serial mode.
-
公开(公告)号:ITVA20010034A1
公开(公告)日:2003-04-14
申请号:ITVA20010034
申请日:2001-10-12
Applicant: ST MICROELECTRONICS SRL
Inventor: PERRONI MAURIZIO , POLIZZI SALVATORE
-
公开(公告)号:ITMI20021185D0
公开(公告)日:2002-05-31
申请号:ITMI20021185
申请日:2002-05-31
Applicant: ST MICROELECTRONICS SRL
Inventor: POLIZZI SALVATORE , PERRONI MAURIZIO , POLI SALVATORE
-
公开(公告)号:ITVA20020012D0
公开(公告)日:2002-02-08
申请号:ITVA20020012
申请日:2002-02-08
Applicant: ST MICROELECTRONICS SRL
Inventor: PERRONI MAURIZIO , POLIZZI SALVATORE
IPC: G11C7/10
Abstract: A memory device includes an internal address bus, and first and second internal data busses. A memory receives from the internal address bus an address of memory data to be read, and transfers read memory data in blocks of N bits to the first internal data bus. An address storing circuit is coupled to the internal address bus for storing the address of the memory data to be read. An array of latches is coupled to the first internal data bus for storing the read memory data received therefrom. The array of latches includes two banks of latches. Each bank has N latches and is controlled independently from the other bank by respective commands, and each bank stores bits present on the first internal data bus upon receiving the respective commands. The second internal data bus is also connected to the array of latches. A state machine is connected to the array of latches for providing the respective commands for control thereof, and the state machine alternates the respective commands for commanding a consecutive reading of the blocks of N bits.
-
公开(公告)号:IT201800003622A1
公开(公告)日:2019-09-15
申请号:IT201800003622
申请日:2018-03-15
Applicant: ST MICROELECTRONICS SRL
IPC: G11C20060101
-
19.
公开(公告)号:IT201600098496A1
公开(公告)日:2018-03-30
申请号:IT201600098496
申请日:2016-09-30
Applicant: ST MICROELECTRONICS SRL
Inventor: POLIZZI SALVATORE , PERRONI MAURIZIO FRANCESCO
-
公开(公告)号:ITUA20163999A1
公开(公告)日:2017-12-01
申请号:ITUA20163999
申请日:2016-05-31
Applicant: ST MICROELECTRONICS SRL
Inventor: CAMPARDO GIOVANNI , POLIZZI SALVATORE
-
-
-
-
-
-
-
-
-