Abstract:
A semiconductor electronic device (1) is disclosed, which comprises a die (2) of semiconductor material and a support (3), the die (2) of semiconductor material including an integrated electronic circuit and a plurality of contact pads (6) associated with the electronic circuit and connected electrically to the support (3) by wire leads (4), each contact pad of said plurality of contact pads (6) comprising a lower layer (7) of aluminium or alloys thereof, and an upper layer. Advantageously the upper layer consists of: a first film (9) of palladium or alloys thereof, overlying the lower layer (7) of aluminium or alloys thereof; and optionally a second film (10) of gold or alloys thereof, overlying the first film (9) of palladium or alloys thereof. Moreover, the layer (7) or film (9, 10) are deposited by an electroless chemical process.
Abstract:
A method for manufacturing semiconductor electronic devices (1) comprising the step of:
forming, from a plane metallic foil defining a lie plane, a supporting frame (2) comprising a mount pad (3) for said devices and corresponding leads (4) being short-circuited to said mount pad (3), characterised in that it comprises the steps of:
downsetting said mount pad (3) on a plane being parallel to said lie plane keeping at least a group of leads (4) on said lie plane and separating by shearing said mount plane (3) from said group of leads (4), mounting a die on a first surface of said mount pad (3), forming the electrical connections between said die and said group of leads (4), encapsulating said frame (2) in a protective package (6) so as to leave the second surface of said mount pad (3), being opposite to said first surface, exposed from said protective package (6).
Abstract:
A semiconductor electronic device (1) is disclosed, which comprises a die (2) of semiconductor material and a support (3), the die (2) of semiconductor material including an integrated electronic circuit and a plurality of contact pads (6) associated with the electronic circuit and connected electrically to the support (3) by wire leads (4), characterized in that each contact pad of said plurality of contact pads (6) comprising a lower layer (7) of copper, or alloys thereof; and an upper layer. Advantageously, the upper layer consists of: a first film (9) of palladium or alloys thereof, overlying the lower layer (7) of copper or alloys thereof; and optionally a second film (10) of gold or alloys thereof, overlying the first film (9) of palladium or alloys thereof. Moreover, the layer (7) or film (9, 10) are deposited by an electroless chemical process.
Abstract:
A semiconductor electronic device (1) is disclosed, which comprises a die (2) of semiconductor material and a support (3), the die (2) of semiconductor material including an integrated electronic circuit and a plurality of contact pads (6) associated with the electronic circuit and connected electrically to the support (3) by wire leads (4), each contact pad of said plurality of contact pads (6) comprising a lower layer (7) of aluminium, or alloys thereof and an upper layer. Advantageously the upper layer consists of: a first film (8) of zinc overlying the lower layer (7) of aluminium or alloys thereof; a second film (9) of nickel or alloys thereof, overlying the first film (8) of zinc; a third film of palladium or alloys thereof, overlying the second film (9) of nickel or alloys thereof; and optionally a fourth film (10) of gold or alloys thereof, overlying the third film of palladium or alloys thereof. Moreover, the layer (7) or film (8,9, 10) are deposited by an electroless chemical process.
Abstract:
A semiconductor electronic device (1) is disclosed, which comprises a die (2) of semiconductor material and a support (3), the die (2) of semiconductor material including an integrated electronic circuit and a plurality of contact pads (6) associated with the electronic circuit and connected electrically to the support (3) by wire leads (4), characterized in that each contact pad of said plurality of contact pads (6) comprises a lower layer (7) of aluminium, copper, or alloys thereof, and an upper layer comprising at least one film (9) of a metal and/or metallic alloy selected from a group comprising nickel, palladium, and alloys thereof, and being deposited by an electroless chemical process.
Abstract:
The present invention relates to a heat sink for surface mount power packages, of the type comprising a conductive element having at least a surface (9) which is in contact with an exposed surface (6) of slug (5) incorporated into an IC power package (1) to be mounted on a printed circuit board (4). The conductive element (8) of the heat sink is formed by a first portion (8a) passing through a hole (7) provided in said printed circuit board (4) and by a second larger portion (8b) abutting against the printed circuit board (4). A process is also provide for mounting the heat sink (8) on an IC power package (1) and in contact with an exposed slug (5) surface of the package (1) to be mounted on the printed circuit board (4).