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    11.
    发明专利
    未知

    公开(公告)号：DE69709303T2

    公开(公告)日：2002-06-13

    申请号：DE69709303

    申请日：1997-12-04

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： TSUNO TAKASHI ,  IMAI TAKAHIRO ,  YOSHIDA KENTARO ,  KUMAZAWA YOSHIAKI

    IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32 ,  C30B25/02

    Abstract: In a method of synthesizing diamond on a substrate (11) from plasma containing a carbon component, filaments (3) are provided above the substrate (11). The filaments (3) contain tungsten which is a thermoelectron-emitting material. An electrode (4) is provided on a position separating from the filaments (3). The filaments (3) are at least temporarily supplied with a potential relatively higher than that of the substrate (11), while the electrode (4) is at least temporarily supplied with a potential relatively higher than that of the filaments (3). Thus, plasma is generated between the filaments (3) and the substrate (11), while electrons are moved from the filaments (3) to the electrode (4) for generating plasma between the filaments (3) and the electrode (4), thereby forming nuclei of diamond. The potentials of the electron emitters and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

    SEMICONDUCTOR LASER PROVIDED WITH DIAMOND HEAT DISSIPATING PART
    16.
    发明专利
    SEMICONDUCTOR LASER PROVIDED WITH DIAMOND HEAT DISSIPATING PART 失效

    公开(公告)号：JPH1126887A

    公开(公告)日：1999-01-29

    申请号：JP19788697

    申请日：1997-07-07

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YOSHIDA KENTARO ,  IMAI TAKAHIRO ,  KUMAZAWA YOSHIAKI

    IPC: C30B29/04 ,  H01L21/205 ,  H01S3/04 ,  H01S5/00 ,  H01S5/024 ,  H01S3/18 ,  H01S3/043

    Abstract: PROBLEM TO BE SOLVED: To reduce manufacturing cost of a diamond heat dissipating part and to prevent deterioration of a performance caused by thermal stress, by joining a heat dissipating part of a specified thickness formed into a plate-like substrate shape with a wax material of a specified thickness. SOLUTION: A semiconductor laser 1 and a vapor phase synthetic diamond 4 of a thickness 3-9 μm formed on a plate-like substrate 5 are joined together with a wax material 2 of a thickness 2-8 μm, so that a thermal stress generated in a semiconductor element 1 is relaxed. The cost is significantly reduced compared with a conventional diamond because the maximum thickness is 9 μm. Not only reduce the cost but also a diamond film is made thin to prevent thermal stress. The diamond synthesized on the substrate 5 in a vapor phase synthetic manner is rough in the surface, and usually it is not fit for mounting on the semiconductor element if it is used as it is. However, in a thin film of the film thickness of the diamond 3-9 μm, a desired surface roughness is achieved even when especially no process is performed after synthesis.

    OPTICAL WINDOW AND ITS MANUFACTURE
    17.
    发明专利
    OPTICAL WINDOW AND ITS MANUFACTURE 失效

    公开(公告)号：JPH0933704A

    公开(公告)日：1997-02-07

    申请号：JP17866095

    申请日：1995-07-14

    Applicant: OKADA NORIO ,  ASAKA SHUJI ,  URISU TSUNEO ,  SUMITOMO ELECTRIC INDUSTRIES

    Inventor： OKADA NORIO ,  ASAKA SHUJI ,  URISU TSUNEO ,  YAMAMOTO YOSHIYUKI ,  TANABE KEIICHIRO ,  KUMAZAWA YOSHIAKI

    IPC: G02B5/00 ,  B01J3/00 ,  B32B9/00 ,  C30B29/04 ,  G02B1/00 ,  G02B1/02 ,  G02B7/00

    Abstract: PROBLEM TO BE SOLVED: To provide the optical window with superior characteristics, which has superior transmission characteristics over a wide range of the infrared to vacuum ultraviolet regions and can be fitted to an ultrahigh vacuum device and is resistant to baking, and its manufacturing method. SOLUTION: The manufacturing process comprises a process of manufacturing an optical window consisting of at least diamond 31 as a window material, a flange 22 for the vacuum device, a bonded frame 21 for joining the diamond 31 with the flange 22, and a bonding material 32 made of a specific material for bonding the bonded frame 21 with the diamond 31 and the diamond plate 31, a process of fitting the bonded frame 21 to the flange 22, and a process of fitting the diamond plate 31 to the bonded frame 21 through the bonding material 31. The effect further increases by properly determining the shape, material, etc., of the bonded frame 21.

    BLANK FOR TOOL AND MANUFACTURE THEREOF
    18.
    发明专利
    BLANK FOR TOOL AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPS614609A

    公开(公告)日：1986-01-10

    申请号：JP12395684

    申请日：1984-06-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： KUMAZAWA YOSHIAKI ,  HARA AKIO

    IPC: B23C5/08 ,  B23B51/00 ,  B23B51/02 ,  B23K1/19 ,  C04B37/02 ,  C23C24/08 ,  C23C30/00

    Abstract: PURPOSE:To provide a tool for working materials difficult to work by a sandwich structure of a sintered diamond having the one surface bonded to a sintered hard alloy and the other surface bonded to W, Mo or their alloy with sufficient holding strength on both soldered surfaces. CONSTITUTION:Between a 1mm. thick sintered hard alloy plate 2 composed of WC-5% Co and a 0.5mm. thick Mo plate 3 is placed and sintered powder of diamond 1 having grain size of 5mu under the condition of 50,000 atmospheric pressure and 1,400 deg.C by the use of super-high temperature and high temperature unit to provide a 0.5mm. thick sintered diamond body 1. This has a metallic outer surface capable of being soldered to a twist drill 5 or the like for tool blank with sufficient strength.

    DIAMOND MEMBER FOR ELECTRON EMITTING ELEMENT, ITS MANUFACTURE, AND ELECTRONIC DEVICE
    19.
    发明专利
    DIAMOND MEMBER FOR ELECTRON EMITTING ELEMENT, ITS MANUFACTURE, AND ELECTRONIC DEVICE 失效

    公开(公告)号：JPH10312735A

    公开(公告)日：1998-11-24

    申请号：JP6936898

    申请日：1998-03-04

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  CHIKUNO TAKASHI ,  SHIOMI HIROSHI ,  KUMAZAWA YOSHIAKI ,  IMAI TAKAHIRO

    IPC: C01B31/06 ,  C30B29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J37/073

    Abstract: PROBLEM TO BE SOLVED: To provide electron emitting elements sufficiently emitting electrons and easily manufacture them with uniform quality by growing diamond lugs each having a shape capable of emitting electrons and a sharp tip section on the surface of a diamond substrate. SOLUTION: The surface of a diamond substrate preferably has a (100) plane, a (110) plane, or a (111) plane, and diamond lugs 26 on it are surrounded by the (111) plane, or the (111) plane and (100) plane, or the (100) plane. A cylindrical upheaval portion 25 integrally formed on the substrate 21 of a high- crystallinity Ib type or natural diamond single crystal is used as a nucleus, and each lug portion 26 is obtained by vapor phase synthetic epitaxial growth. The lug portion 26 is surrounded by an inherent crystalline plane governed by the symmetric property of a crystalline structure, it has electrical and mechanical characteristics peculiar to a single crystal, it is sharpened at the atomic level, it has a shape determined by the plane index of the surface of the substrate 21, and the surface of the lug portion 26 is stable in energy.

    PRODUCTION OF DIAMOND HEAT SINK
    20.
    发明专利
    PRODUCTION OF DIAMOND HEAT SINK 失效

    公开(公告)号：JPH10226589A

    公开(公告)日：1998-08-25

    申请号：JP3010297

    申请日：1997-02-14

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SHIOMI HIROSHI ,  KUMAZAWA YOSHIAKI

    IPC: C04B41/88 ,  C04B35/52 ,  H01L21/48 ,  H01L23/373

    Abstract: PROBLEM TO BE SOLVED: To maintain specified insulating property by preparing a diamond polycrystal with metal films formed on the upper and lower faces and cutting the polycrystal in the vertical direction to produce diamond crystal chips each having the upper face, the lower face and a cut face from the upper face to the lower face, and subjecting the cut face to plasma treatment. SOLUTION: Metal films are formed by sputtering Ti, Pt, Au and gold tin in this order or the upper and lower faces of a diamond polycrystal which is preliminarily cut into a specified dimension. Then a photoresist is applied on the metal films to transfer a specified pattern to form a metal film pattern. The diamond polycrystal is cut into a grid by using a YAG laser or excimer laser to obtain a diamond polycrystal chips (heat sink). Then the chips are disposed so that only cut faces are exposed to plasma and then subjected to plasma treatment by using CF4 /O2 gas with 0 to 70% halides such as CF4 . The electric resistance on the upper and lower faces is controlled to >=1×10 Ω.cm.

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