公开(公告)号：EP2164090A4

公开(公告)日：2010-07-28

申请号：EP08721766

申请日：2008-03-11

Applicant: ULVAC INC

Inventor： IIJIMA EIICHI ,  HAKOMORI MUNETO ,  KURAUCHI TOSHIHARU ,  YANO TAKANOBU

IPC: H01J11/00 ,  H01J11/02 ,  H01J9/20 ,  H01J11/12 ,  H01J11/24 ,  H01J11/26 ,  H01J11/46 ,  H01J11/48 ,  H01J29/86

CPC classification number: H01J11/12 ,  H01J9/261 ,  H01J11/48

公开(公告)号：EP2077574A4

公开(公告)日：2014-04-30

申请号：EP07830086

申请日：2007-10-18

Applicant: ULVAC INC

Inventor： IIJIMA EIICHI ,  SHEN GUO HUA ,  SATAKE TOHRU

IPC: H01J37/06 ,  H01J3/02 ,  H01J37/04 ,  H01J37/07 ,  H01J37/304

CPC classification number: H01J37/07 ,  H01J3/026 ,  H01J37/06 ,  H01J37/304 ,  H01J2237/004 ,  H01J2237/182

公开(公告)号：EP2157595A4

公开(公告)日：2011-04-20

申请号：EP08777036

申请日：2008-05-30

Applicant: ULVAC INC

Inventor： IIJIMA EIICHI ,  HAKOMORI MUNETO ,  NAKATUKA MASATO ,  KURAUCHI TOSHIHARU

IPC: H01J9/39 ,  H01J9/26 ,  H01J9/46 ,  H01J17/49

CPC classification number: H01J9/39 ,  H01J9/261 ,  H01J9/385 ,  H01J9/46 ,  H01J11/12

公开(公告)号：EP2093306A4

公开(公告)日：2010-03-03

申请号：EP07830048

申请日：2007-10-18

Applicant: ULVAC INC

Inventor： IIJIMA EIICHI ,  HAKOMORI MUNETO

IPC: H01J9/02 ,  C23C14/08 ,  C23C14/24 ,  H01J17/49

CPC classification number: C23C14/081 ,  C23C14/568 ,  H01J9/02 ,  H01J11/12 ,  H01J11/40

Abstract: [Object] To simplify a production process regarding a production method for a plasma display panel by lowering a deposition temperature so that a (111)-oriented MgO layer can be easily obtained as a protective layer. [Solving Means] In a production method for a plasma display panel constituted of a front substrate including a scanning electrode, a sustaining electrode, a dielectric layer, and a protective layer, and a back substrate including an address electrode, a barrier rib, and a phosphor, a temperature of a glass substrate before being subjected to vapor deposition in an electron beam vapor deposition apparatus is set at room temperature (120°C or less), and an MgO deposition rate of the electron beam vapor deposition apparatus is set to be 8000 Å*m/min or more. By the deposition at room temperature, an MgO layer equivalent to that obtained by conventional deposition at high temperature can be obtained.