公开(公告)号：EP2178109A4

公开(公告)日：2012-12-19

申请号：EP08792231

申请日：2008-08-05

Applicant: ULVAC INC

Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU

IPC: H01L21/3065 ,  C23C14/35

CPC classification number: H01L21/30655 ,  C23C14/022 ,  C23C14/046 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3266

公开(公告)号：EP2136391A4

公开(公告)日：2012-12-19

申请号：EP08740167

申请日：2008-04-10

Applicant: ULVAC INC

Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

公开(公告)号：EP2466627A4

公开(公告)日：2015-06-24

申请号：EP10808085

申请日：2010-08-12

Applicant: ULVAC INC

Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU

IPC: H01L21/3065

CPC classification number: H01L21/30655

公开(公告)号：EP2063463A4

公开(公告)日：2010-11-24

申请号：EP07806776

申请日：2007-09-05

Applicant: ULVAC INC

Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU

IPC: H01L21/3065

CPC classification number: H01J37/3266 ,  H01J37/32091 ,  H01J37/32642 ,  H01J2237/334

公开(公告)号：EP2148360A4

公开(公告)日：2010-07-21

申请号：EP08752425

申请日：2008-05-08

Applicant: ULVAC INC

Inventor： MORIKAWA YASUHIRO ,  SUU KOUKOU ,  HAYASHI TOSHIO ,  SATOU TADAYUKI

IPC: H01L21/306 ,  H01L21/3065 ,  H01L41/18 ,  H01L41/22 ,  H01L41/332 ,  H03H3/02

CPC classification number: H01L21/306 ,  H01L41/332 ,  H03H3/02

Abstract: A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided. The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.