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    Plasma processing apparatus
    1.
    发明专利
    Plasma processing apparatus 未知

    公开(公告)号：GB2381375A

    公开(公告)日：2003-04-30

    申请号：GB0211307

    申请日：2002-05-17

    Applicant: ULVAC INC

    Inventor： SUGITA KIPPEI ,  KAGA KOUJI ,  HAYASHI TOSHIO ,  CHEN WEI

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: A plasma processing apparatus, e.g. for etching or CVD, is capable of forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. In the plasma processing apparatus an electrode 37 provided at a position opposite to a substrate mounting electrode 30 is configured to be a counter electrode, whose potential is in a floating state. Radio frequency power from an RF source 36 is branched from a line supplying a radio frequency antenna coil 34, which generates inductive discharge, into the counter electrode 37 through a capacitor 41 so as to share a part of the radio frequency power used for the inductive discharge, thereby generating a self-bias in the counter electrode. There may be a mechanism for adjusting the capacitor 41 to maintain the radio frequency voltage applied to the floating electrode constant. In a modification, a Faraday shield or an electrostatic field shield electrode, provided inside the antenna coil, is used instead of the opposite electrode 37.

    Plasma processing apparatus
    3.
    发明专利
    Plasma processing apparatus 未知

    公开(公告)号：GB2381375B

    公开(公告)日：2003-10-01

    申请号：GB0211307

    申请日：2002-05-17

    Applicant: ULVAC INC

    Inventor： SUGITA KIPPEI ,  KAGA KOUJI ,  HAYASHI TOSHIO ,  CHEN WEI

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: The present invention is to provide a plasma processing apparatus, whose structure can be simplified, and further, which is capable of forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. In the plasma processing apparatus according to the invention, a ground electrode provided at a position opposite to a substrate mounting electrode is configured to be a counter electrode, whose potential is in a floating state, and radio frequency power is branched at an arbitrary position of the radio frequency antenna coil, which generates inductive discharge, into the counter electrode through a capacitor so as to share a part of the radio frequency power used for inductive discharge, thereby generating a self-bias in the counter electrode. In the system, there is provided a mechanism for controlling the radio frequency voltage to be applied to the floating electrode uniformly.

    Dry etching apparatus and dry etching method
    4.
    发明专利
    Dry etching apparatus and dry etching method 未知

    公开(公告)号：AU2008250190A1

    公开(公告)日：2008-11-20

    申请号：AU2008250190

    申请日：2008-05-08

    Applicant: ULVAC INC

    Inventor： HAYASHI TOSHIO ,  SUU KOUKOU ,  MORIKAWA YASUHIRO

    IPC: H01L21/3065 ,  C23C4/10

    Abstract: A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.

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