13.
    发明专利
    未知

    公开(公告)号:DE60025407T2

    公开(公告)日:2006-07-27

    申请号:DE60025407

    申请日:2000-04-07

    Applicant: XEROX CORP

    Abstract: An asymmetric waveguide nitride laser diode structure and a method of fabricating the same is provided. The asymmetric laser diode structure comprises an active layer having a first and a second surface, a transition layer in contact with the first surface of the active layer, a p-cladding layer disposed adjacent to the transition layer, and an n-type layer in contact with the second surface of the active layer.

    16.
    发明专利
    未知

    公开(公告)号:DE60206121D1

    公开(公告)日:2005-10-20

    申请号:DE60206121

    申请日:2002-10-02

    Applicant: XEROX CORP

    Abstract: A stress-balancing layer (130) is formed over portions (122) of a spring metal finger (120) that remain attached to an underlying substrate (101) to counter internal stresses inherently formed in the spring metal finger (120). The (e.g., positive) internal stress of the spring metal causes the claw (tip) (125) of the spring metal finger (120) to bend away from the substrate (101) when an underlying release material is removed. The stress-balancing pad (130) is formed on an anchor portion (122) of the spring metal finger (120), and includes an opposite (e.g., negative) internal stress that counters the positive stress of the spring metal finger (120). A stress-balancing layer (230) is either initially formed over the entire spring metal finger (120) and then partially removed (etched) from the claw portion (125), or selectively deposited only on the anchor portion (122) of the spring metal finger (120). An interposing etch stop layer (325-1) is used when the same material composition is used to form both the spring metal (220) and stress-balancing (230) layers.

    17.
    发明专利
    未知

    公开(公告)号:BR0204949A

    公开(公告)日:2005-02-22

    申请号:BR0204949

    申请日:2002-11-29

    Applicant: XEROX CORP

    Abstract: An improved nanotip structure and method for forming the nanotip structure and display a display system using the improved nanotip structure is described. The described nanotip is formed from a semiconductor having a crystalline structure such as gallium nitride. The crystalline structure preferably forms dislocations oriented in the direction of the nanotips. One method of forming the nanotip structure uses the relatively slow etching rates that occur around the dislocations compared to the faster etch rates that occur in other parts of the semiconductor structure. The slower etching around dislocations enables the formation of relatively high aspect ratio nanotips in the dislocation area.

    MANUFACTURING METHOD OF GaN FIELD EMITTER ALLAY

    公开(公告)号:JP2003187690A

    公开(公告)日:2003-07-04

    申请号:JP2002342729

    申请日:2002-11-26

    Applicant: XEROX CORP

    Abstract: PROBLEM TO BE SOLVED: To provide an improved manufacturing method of a small nano-chip. SOLUTION: The manufacturing method of the field emitter allay includes a process of forming a crystalline material having hexagonal symmetric structure so as to form a dislocation, and a process of forming the nano chip at every dislocation by etching the crystalline material. COPYRIGHT: (C)2003,JPO

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