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    ELECTRON GUN AND ELECTRON BEAM DEVICE
    12.
    发明公开
    ELECTRON GUN AND ELECTRON BEAM DEVICE 有权
    电子枪和电子束装置

    公开(公告)号：EP2680294A1

    公开(公告)日：2014-01-01

    申请号：EP11859058.7

    申请日：2011-02-25

    Applicant: Param Corporation

    Inventor： YASUDA, Hiroshi

    IPC: H01J1/13 ,  H01J1/26 ,  H01J1/304 ,  H01J37/06 ,  H01L21/027

    CPC classification number: H01J29/485 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/148 ,  H01J1/26 ,  H01J37/065 ,  H01J37/07 ,  H01J37/075 ,  H01J37/26 ,  H01J37/3174

    Abstract: An electron gun cathode (104) is column shaped, and emits electrons by being heated. A holder (103), which covers the bottom and sides of the electron gun cathode, has electrical conductivity and holds the electron gun cathode, and is composed of a material that does not easily react with the electron gun cathode when in a heated state, is provided. The tip of the electron gun cathode (104) protrudes from the holder (103) so as to be exposed, and electrons are emitted from the tip toward the front by applying an electric field to the tip.

    Abstract translation: 电子枪阴极（104）是柱状的，并且通过加热而发射电子。 覆盖电子枪阴极底部和侧面的保持器（103）具有导电性并保持电子枪阴极，并且由在加热状态下不易与电子枪阴极反应的材料构成， 被提供。 电子枪阴极（104）的前端从支架（103）突出而露出，通过对前端施加电场，电子从前端向前方射出。

    Electron beam exposing apparatus
    13.
    发明公开
    Electron beam exposing apparatus 失效
    电子束照射装置。

    公开(公告)号：EP0030465A1

    公开(公告)日：1981-06-17

    申请号：EP80304403.1

    申请日：1980-12-05

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Takigawa, Tadahiro ,  Sasaki, Isao

    IPC: H01J37/06 ,  H01J3/02 ,  H01J1/14

    CPC classification number: H01J1/16 ,  H01J1/148 ,  H01J3/021 ,  H01J37/06

    Abstract: A variable shaping type electron beam exposing apparatus is provided which comprises an electron gun (10) which irradiates an electron beam from the front end of a cathode chip (12, 52); shaping plates (28, 34) having openings of variable shapes for shaping the electron beam irradiated from the electron gun (10) into the shapes of these openings; and an objective lens (50) for focusing the electron beam passed through the shaping plates (28, 34) into a predetermined shape on a sample. In this apparatus, the cathode chip (12, 52) is made of single-crystal lanthanum hexaboride whose axial orientation is 310, the front end of it is formed into a circular conical shape, and half the vertical angle of the front end is set to be between 60° and 85°. The maximum area of the image on the sample is between 2 to 50 µm 2 . The cathode (12, 52) of the electron gun (10) is of a material whose ratio of work function to temperature for reaching a vapor pressure of 1 x 10- 5 Torr is below 1.5 x 10 -3 eV/deg.

    Thermionic cathode with even electric field distribution on electron emitting surface
    16.
    发明授权
    Thermionic cathode with even electric field distribution on electron emitting surface 有权
    在电子发射表面具有均匀电场分布的热电阴极

    公开(公告)号：US09299525B2

    公开(公告)日：2016-03-29

    申请号：US14047827

    申请日：2013-10-07

    Applicant: NUFLARE TECHNOLOGY, INC.

    Inventor： Ryoei Kobayashi

    IPC: H01J1/148 ,  H01J9/04 ,  H01J37/065

    CPC classification number: H01J1/148 ,  H01J9/04 ,  H01J37/065 ,  H01J2237/06308 ,  H01J2237/26 ,  H01J2237/31754

    Abstract: A thermionic cathode of an embodiment includes a carbon coating applied to an outer surface of the side, the carbon coating comprising a contiguous extended portion surrounding the upper section and spaced apart from said upper section by a gap having 1 μm or more and 10 μm or less in width and having a difference of 1 μm or less in the width between a maximum value and a minimum value in a periphery of the electron emitting surface.

    Abstract translation: 实施方案的热离子阴极包括施加到侧面的外表面的碳涂层，碳涂层包括围绕上部的邻接的延伸部分并且与上部分隔开具有1μm或更大和10μm的间隙，或 宽度较小，并且在电子发射表面的周围的最大值和最小值之间的宽度上具有1μm或更小的差。

    Thermal-field type electron source composed of transition metal carbide material with artificial facet
    17.
    发明授权
    Thermal-field type electron source composed of transition metal carbide material with artificial facet 有权
    由过渡金属碳化物材料与人造面组成的热场型电子源

    公开(公告)号：US09240301B1

    公开(公告)日：2016-01-19

    申请号：US13851732

    申请日：2013-03-27

    Applicant: Applied Physics Technologies, Inc.

    Inventor： William A. Mackie ,  Gerald G. Magera

    IPC: H01J1/14 ,  H01J1/146 ,  H01J19/10 ,  H01J1/148

    CPC classification number: H01J1/148 ,  H01J1/14 ,  H01J1/146 ,  H01J19/10 ,  H01J37/06 ,  H01J2201/196 ,  H01J2201/2889 ,  H01J2201/30484 ,  H01J2201/317 ,  H01J2237/06316

    Abstract: An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.

    Abstract translation: 电子源由具有高耐火性质的混合金属碳化物材料制成。 从这些材料产生场强增强的热离子发射，即热场或延伸的肖特基发射需要使用某种低功函数的晶体学方向，例如（100），（210）和（310） 。 这些材料由于其耐火性质而不自然而然。 所披露的由过渡金属碳化物材料制成的电子源在安装在需要高亮度，远光束电流源的先进成像应用的扫描电子显微镜（SEM）中是特别有用的。

    Electron gun and electron beam device
    18.
    发明授权
    Electron gun and electron beam device 有权
    电子枪和电子束装置

    公开(公告)号：US09070527B2

    公开(公告)日：2015-06-30

    申请号：US14000988

    申请日：2011-02-25

    Applicant: Hiroshi Yasuda

    Inventor： Hiroshi Yasuda

    IPC: H01J29/48 ,  H01J1/148 ,  H01J1/26 ,  H01J37/075 ,  H01J37/317 ,  H01J37/065 ,  H01J37/07 ,  H01J37/26 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: H01J29/485 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/148 ,  H01J1/26 ,  H01J37/065 ,  H01J37/07 ,  H01J37/075 ,  H01J37/26 ,  H01J37/3174

    Abstract: An electron gun cathode (104) is column shaped, and emits electrons by being heated. A holder (103), which covers the bottom and sides of the electron gun cathode, has electrical conductivity and holds the electron gun cathode, and is composed of a material that does not easily react with the electron gun cathode when in a heated state, is provided. The tip of the electron gun cathode (104) protrudes from the holder (103) so as to be exposed, and electrons are emitted from the tip toward the front by applying an electric field to the tip.

    Abstract translation: 电子枪阴极（104）为柱状，通过加热发射电子。 覆盖电子枪阴极的底部和侧面的保持器（103）具有导电性并保持电子枪阴极，并且由处于加热状态时不易与电子枪阴极反应的材料构成， 被提供。 电子枪阴极（104）的尖端从保持器（103）突出以露出，并且通过向尖端施加电场，从尖端向前方发射电子。

    Electron emission materials and components
    19.
    发明授权
    Electron emission materials and components 失效
    电子发射材料和组件

    公开(公告)号：US06190579B1

    公开(公告)日：2001-02-20

    申请号：US09435508

    申请日：1999-11-08

    Applicant: Garth W. Billings

    Inventor： Garth W. Billings

    IPC: H01B102

    CPC classification number: H01B1/06 ,  B82Y10/00 ,  H01J1/14 ,  H01J1/142 ,  H01J1/144 ,  H01J1/148 ,  H01J1/304 ,  H01J2201/19

    Abstract: Electron emission materials consisting of carbides, borides, and oxides, and related mixtures and compounds, of Group IVB metals Hf, Zr, and Ti, Group IIA metals Be, Mg, Ca, Sr, and Ba, and Group IIIB metals Sc, Y, and lanthanides La through Lu are used in electrodes. The electron emission materials include ternary Group IVB-IIIB, IVB-IIA, and IIIB-IIA oxides and quaternary Group IVB-IIIB-IIA oxides. These electron emission materials are typically contained in a refractory metal matrix formed of tungsten, molybdenum, tantalum, rhenium, and their alloys, but may also be used by themselves. These materials and electrodes have high melting points, low vapor pressures, low work functions, high electrical and thermal conductivity, and high thermionic electron emission and field emission properties.

    Abstract translation: 由ⅣB族金属Hf，Zr和Ti，IIA族金属Be，Mg，Ca，Sr和Ba以及IIIB族金属组成的由碳化物，硼化物和氧化物组成的电子发射材料及相关混合物和化合物Sc，Y ，镧系元素La-Lu用于电极。 电子发射材料包括IVB-IIIB族，IVB-IIA族和IIIB-IIA族氧化物，IVB-IIIB-IIA族四元族氧化物。 这些电子发射材料通常包含在由钨，钼，钽，铼及其合金形成的难熔金属基体中，但也可以自己使用。 这些材料和电极具有高熔点，低蒸汽压力，低功函数，高导热性和高热电子发射和场发射性能。

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