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    Electron emitter structure and associated method of producing field emission displays
    12.
    发明授权
    Electron emitter structure and associated method of producing field emission displays 失效
    电子发射体结构及相关的场致发射显示方法

    公开(公告)号：US08076832B2

    公开(公告)日：2011-12-13

    申请号：US12122176

    申请日：2008-05-16

    Applicant: Hiroyuki Okita

    Inventor： Hiroyuki Okita

    IPC: H01J1/02

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30476

    Abstract: A method of forming an electron emitter structure for use in a field emission display, or as a field emission backlight for an LCD display is provided. The electron emitter structure is formed by depositing mask elements onto an laminar Al substrate, and etching the Al substrate chemically through gaps between the mask elements, such that a spikes are formed on the substrate. These spikes are then covered with an electron emitter material. The spikes can be formed with a desired pitch/height ratio.

    Abstract translation: 提供一种形成用于场致发射显示器中的电子发射器结构或用作LCD显示器的场致发射背光的方法。 通过将掩模元件沉积到层状Al衬底上并通过掩模元件之间的间隙化学蚀刻Al衬底而形成电子发射体结构，使得在衬底上形成尖峰。 然后用电子发射体材料覆盖这些尖峰。 尖峰可以以期望的俯仰/高度比形成。

    DLC emitter devices and associated methods
    13.
    发明授权
    DLC emitter devices and associated methods 失效
    DLC发射器和相关方法

    公开(公告)号：US07741764B1

    公开(公告)日：2010-06-22

    申请号：US11651920

    申请日：2007-01-09

    Applicant: Chien-Min Sung

    Inventor： Chien-Min Sung

    IPC: H01J9/02 ,  H01J63/04 ,  H01J1/62 ,  H01J21/00 ,  H01J9/24

    CPC classification number: H01J29/04 ,  H01J31/127 ,  H01J2201/30476

    Abstract: Diamond-like carbon field emission surfaces, including associated devices and methods for using such devices are disclosed. In one aspect, for example, a field emission surface is provided, including a smooth layer of diamond-like carbon disposed on a smooth substrate, the diamond-like carbon layer having a uniformly distributed ablation pattern configured to emit electrons. The diamond-like carbon layer should be smooth in order to allow the uniform distribution of the ablation pattern.

    Abstract translation: 公开了类金刚石碳场发射表面，包括用于使用这种装置的相关装置和方法。 在一个方面，例如，提供场发射表面，其包括设置在光滑衬底上的类金刚石碳的平滑层，所述类金刚石碳层具有被配置为发射电子的均匀分布的烧蚀图案。 类金刚石碳层应该是平滑的，以便允许消融图案的均匀分布。

    Manufacturing method of electron emitter structure, electron emitter structure manufactured by manufacturing method of electron emitter structure, field electron emission display device with electron emitter structure built in, and field electron emission backlight
    15.
    发明专利
    Manufacturing method of electron emitter structure, electron emitter structure manufactured by manufacturing method of electron emitter structure, field electron emission display device with electron emitter structure built in, and field electron emission backlight 审中-公开
    电子发射器结构的制造方法，电子发射器结构的制造方法制造的电子发射器结构，具有电子发射器结构的场电子发射显示装置和场电子发射背光

    公开(公告)号：JP2009059680A

    公开(公告)日：2009-03-19

    申请号：JP2008135025

    申请日：2008-05-23

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： OKITA HIROYUKI

    IPC: H01J9/02 ,  F21S2/00 ,  F21Y105/00 ,  G02F1/13357 ,  H01J1/304 ,  H01J31/12 ,  H01J63/06

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30476

    Abstract: PROBLEM TO BE SOLVED: To provide procedures for forming an electron emitter structure used for a manufacturing method of an electron emitter structure, an electron emitter structure manufactured by the method, a field electron emission display device with the electron emitter structure built in, and a field electron emission backlight field electron emission display device with the electron emitter structure built in, or for a field electron emission backlight with the electron emitter structure built in for an LCD display device.
    SOLUTION: The electron emitter structure is formed by depositing mask elements 20 on a thin A1 substrate 10, chemically etching the A1 substrate through gaps between the mask elements 20, and forming spikes 13 on the substrate. Then, the spikes 13 are covered by an electron emitter material 21. The spike 13 can be formed to have a desired ratio of pitch/height.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供用于形成用于电子发射体结构的制造方法的电子发射体结构的方法，通过该方法制造的电子发射体结构，内置电子发射体结构的场致电子发射显示装置 以及内置有电子发射体结构的场电子发射背景场电子发射显示装置，或者是内置用于LCD显示装置的电子发射体结构的场电子发射背光。 解决方案：通过在薄的Al衬底10上沉积掩模元件20，通过掩模元件20之间的间隙化学蚀刻Al衬底，并在衬底上形成尖峰13来形成电子发射体结构。 然后，尖峰13被电子发射体材料21覆盖。尖峰13可以形成为具有希望的节距/高度比。 版权所有（C）2009，JPO＆INPIT

    Electron beam source and method to produce electron beam source
    17.
    发明专利
    Electron beam source and method to produce electron beam source 有权
    电子束源和生产电子束源的方法

    公开(公告)号：JP2010086967A

    公开(公告)日：2010-04-15

    申请号：JP2009228377

    申请日：2009-09-30

    Applicant: Carl Zeiss Nts Gmbh ,  Nanotools Gmbh ,  カール・ツァイス・エヌティーエス・ゲーエムベーハーCarl Zeiss NTS GmbH ,  ナノツールズ ゲーエムベーハー

    Inventor： DREXEL VOLKER ,  MANTZ ULRICH ,  IRMER BERND ,  PENZKOFER CHRISTIAN

    IPC: H01J37/073 ,  H01J1/304 ,  H01J9/02

    CPC classification number: H01J37/065 ,  H01J1/3044 ,  H01J37/06 ,  H01J2201/30415 ,  H01J2201/30446 ,  H01J2201/30476 ,  H01J2237/06316 ,  H01J2237/06375 ,  H01J2237/065 ,  Y10T29/49888

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam source with easy mounting and with long useful life. SOLUTION: A beam electron source includes a base, chips which are fixed to the base, separately extended from the base, equipped with a core which is applied with a surface made of a first material and a coating layer made of a second material, and providing a surface of the chip with the second material, a first electric terminal electrically connected with the coating layer, an extraction electrode having a gap facing to the chip, and a second electric terminal electrically connected with the extraction electrode. The beam electron source satisfies at least one of the following conditions: the electric conductivity of the first material is lower than one of 10 5 s/m, 10 3 s/m, 10s/m, 10 -1 s/m, 10 -3 s/m, 10 -5 s/m, or 10 -7 s/m, the electric conductivity of the second material is higher than one of 10 -7 s/m, 10 -5 s/m, 10 -3 s/m, 10 -1 s/m, 10 2 s/m, 10 4 s/m, or 10 6 s/m, or the ratio of the electric conductivity between the second material and the first material is greater than one of 10:1, 100:1, 10 4 , 10 6 , or 10 8 . COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供电子束源，安装方便，使用寿命长。 解决方案：束电子源包括基座，芯片固定到与基座分开延伸的基部，配备有芯，其被施加有由第一材料制成的表面和由第二材料制成的涂层 并且提供具有第二材料的芯片的表面，与涂层电连接的第一电端子，具有面向芯片的间隙的引出电极和与引出电极电连接的第二电端子。 束电子源满足以下条件中的至少一个：第一材料的电导率低于10 5 / s / m，10 3 s / m ，10s / m，10 -1 s / m，10 -3 s / m， SP> -7 s / m，第二材料的电导率高于10 -7 s / m，10 -5 m，10 -3 s / m，10 -1 s / m，10 2 s / SP> s / m或10 6 / s / m，或者第二材料与第一材料之间的电导率之比大于10:1,100:1,10:1， SP> 4 ，10 6 或10 8 。 版权所有（C）2010，JPO＆INPIT

    전자 방출원 및 전계 방출 디스플레이 장치
    18.
    发明授权
    전자 방출원 및 전계 방출 디스플레이 장치 失效
    电子发射源和场发射显示装置

    公开(公告)号：KR100785658B1

    公开(公告)日：2007-12-14

    申请号：KR1020060127042

    申请日：2006-12-13

    Applicant: 타퉁컴퍼니

    Inventor： 제이슨로 ,  지안-민정

    IPC: H01J1/304 ,  C01B31/02

    CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J31/123 ,  H01J2201/30476

    Abstract: An electron emission source and a field emission display device are provided to enable a diamond-like carbon composition to have a high aspect ratio through a film structure having a micro-scale height and a nano-scale thickness. An electron emission source includes a substrate(111) and an electron emission layer formed on the substrate. The electron emission layer contains diamond-like carbon flake composition having plural micro-scale film structures. The composition further contains a conductive substance, an adhesive substance, or its compound. The film structure has a thickness of 0.005 to 0.1 micrometers and a lateral height of 0.5 to 4.0 micrometers.

    Abstract translation: 提供电子发射源和场致发射显示装置，以使得类金刚石碳组合物通过具有微尺度高度和纳米级厚度的膜结构具有高纵横比。 电子发射源包括衬底（111）和形成在衬底上的电子发射层。 电子发射层含有具有多个微尺度膜结构的类金刚石碳片组合物。 该组合物还含有导电物质，粘合物质或其化合物。 膜结构的厚度为0.005至0.1微米，横向高度为0.5至4.0微米。

    類鑽碳能量轉換裝置及其方法
    20.
    发明专利
    類鑽碳能量轉換裝置及其方法 失效
    类钻碳能量转换设备及其方法

    公开(公告)号：TW200828401A

    公开(公告)日：2008-07-01

    申请号：TW096131188

    申请日：2007-08-23

    Applicant: 宋健民

    Inventor： 宋健民

    IPC: H01J

    CPC classification number: H01J1/304 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/30476

    Abstract: 本發明係一種關於類鑽碳的能量轉換裝置及製造與使用該裝置的方法,其可改善轉換效率與提高可靠度。該裝置可包括一陰極、一中間件及一陽極,該陰極係具有一基件,該基件係具有一塗覆於該基件至少一部分之類鑽碳材料層,該中間件係電耦合於該類鑽碳材料,且該中間件包含有複數個塗覆有一絕緣材料層之碳結構,該陽極係電耦合於該中間件上且與該類鑽碳材料相對。

    Abstract in simplified Chinese: 本发明系一种关于类钻碳的能量转换设备及制造与使用该设备的方法,其可改善转换效率与提高可靠度。该设备可包括一阴极、一中间件及一阳极,该阴极系具有一基件,该基件系具有一涂覆于该基件至少一部分之类钻碳材料层,该中间件系电耦合于该类钻碳材料,且该中间件包含有复数个涂覆有一绝缘材料层之碳结构,该阳极系电耦合于该中间件上且与该类钻碳材料相对。

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