ELECTRON SOURCES UTILIZING NEGATIVE ELECTRON AFFINITY PHOTOCATHODES WITH ULTRA-SMALL EMISSION AREAS
    11.
    发明申请
    ELECTRON SOURCES UTILIZING NEGATIVE ELECTRON AFFINITY PHOTOCATHODES WITH ULTRA-SMALL EMISSION AREAS 审中-公开
    电子源利用超小型排放区域的负电子亲水光电子

    公开(公告)号:WO1997003453A2

    公开(公告)日:1997-01-30

    申请号:PCT/US1996010978

    申请日:1996-06-27

    Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

    Abstract translation: 电子源包括透光性基板上的负电子亲合性光电阴极和光束发生器,用于将光束引导通过基板在光电阴极处,以激发电子进入导带。 光电阴极具有用于发射尺寸小于约2微米的电子的至少一个有效面积。 电子源还包括用于将电子形成电子束的电子光学器件和用于将光电阴极保持在高真空度的真空外壳。 在一个实施例中,光电阴极的有效发射面积由入射在光电阴极上的光束限定。 在另一个实施方案中,光电阴极的活性发射面积是通过光电阴极的表面改性预先确定的。 光源从光电阴极的超小活性发射区提供非常高的亮度。

    LIGHTING UNIT WITH INTEGRATED REFLECTOR-ANTENNA
    12.
    发明申请
    LIGHTING UNIT WITH INTEGRATED REFLECTOR-ANTENNA 审中-公开
    具有集成反射器天线的照明单元

    公开(公告)号:WO1998036439A2

    公开(公告)日:1998-08-20

    申请号:PCT/NL1997000489

    申请日:1997-08-28

    CPC classification number: H01J61/547 H01J61/025 H01J61/327

    Abstract: The invention relates to a lighting unit in which the gas discharge vessel consists of two or more adjacently situated tubular elements (legs) connected by means of a bridge-construction and where between these legs an electrically conductive element is being placed which is galvanicly connected with one of the electrodes (filaments) of the gas discharge lamp, preferably via a high-ohmic electrical resistor, where this conductive element functions as an additional help for ignition of the lamp and can be used also for light reflection purposes.

    Abstract translation: 本发明涉及一种照明单元,其中气体放电容器由两个或多个相邻位置的管状元件(支脚)组成,该元件通过桥式结构连接,并且在这些支腿之间,放置导电元件,该导电元件与 气体放电灯的电极(灯丝)中的一个,优选地通过高欧姆电阻器,其中该导电元件用作灯的点火的附加帮助,并且还可以用于光反射目的。

    MICROGAP FLAT PANEL DISPLAY
    13.
    发明申请
    MICROGAP FLAT PANEL DISPLAY 审中-公开
    MICROGAP平板显示器

    公开(公告)号:WO1998001884A2

    公开(公告)日:1998-01-15

    申请号:PCT/US1997011672

    申请日:1997-07-02

    CPC classification number: H01J17/49 H01J17/32

    Abstract: A microgap flat panel display which comprises a thin gas-filled display tube that utilizes switched X-Y "pixel" strips to trigger electron avalanches and activate a phosphor at a given location on a display screen. The panel utilizes the principal of electron multiplication in a gas subjected to a high electric field to provide sufficient electron current to activate standard luminescent phosphors located on an anode. The X-Y conductive strips of a few micron widths may, for example, be deposited on opposite sides of a thin insulating substrate, or on one side of the adjacent substrates and function as a cathode. The X-Y strips are separated from the anode by a gap filled with a suitable gas. Electrical bias is selectively switched onto X and Y strips to activate a "pixel" in the region where these strips overlap. A small amount of a long-lived radioisotope is used to initiate an electron avalanche in the overlap region when bias is applied. The avalanche travels through the gas-filled gap and activates a luminescent phosphor of a selected color. The bias is adjusted to give a proportional electron multiplication to control brightness for a given pixel. The application of the electrical bias to the X-Y network of strips can be done using standard electronic switching systems consisting of transistor arrays. With the proper layout of X-Y strips, monochrome or additive color pixels can be triggered to form a display conforming to any video standard, e.g. NTSC, PAL, or SECAM.

    Abstract translation: 一种微隙平板显示器,其包括利用切换的X-Y“像素”条来触发电子雪崩并在显示屏上的给定位置激活磷光体的气体充填显示管。 该面板利用在高电场的气体中的电子倍增原理来提供足够的电子电流以激活位于阳极上的标准发光荧光体。 例如,几微米宽度的X-Y导电条可以沉积在薄绝缘基板的相对侧上,或者在相邻基板的一侧上沉积并用作阴极。 X-Y条带与填充有合适气体的间隙从阳极分离。 选择性地将电偏压切换到X和Y条上以在这些条重叠的区域中激活“像素”。 当施加偏压时,少量的长寿命放射性同位素用于在重叠区域中引发电子雪崩。 雪崩穿过气体填充的间隙并激活所选颜色的发光磷光体。 调整偏置以给出比例电子倍增以控制给定像素的亮度。 将电偏压施加到条带的X-Y网络可以使用由晶体管阵列组成的标准电子开关系统来完成。 利用X-Y条的适当布局,可以触发单色或附加色像素以形成符合任何视频标准的显示器,例如, NTSC,PAL或SECAM。

    COLD CATHODE VACUUM DISCHARGE TUBE
    14.
    发明申请
    COLD CATHODE VACUUM DISCHARGE TUBE 审中-公开
    冷阴极真空排气管

    公开(公告)号:WO1997014168A2

    公开(公告)日:1997-04-17

    申请号:PCT/US1996015591

    申请日:1996-09-27

    CPC classification number: H01T2/02 H01J19/24 H01J21/02

    Abstract: A cold cathode vacuum discharge tube, and method for making same, with an interior surface of the trigger probe (26) coated with carbon deposited by carbon vapor deposition (CVD) or diamond-like carbon (DLC) deposition. Preferably a solid graphite insert (84) is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face (90) is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging.

    Abstract translation: 一种冷阴极真空放电管及其制造方法,其中触发式探针(26)的内表面涂覆有通过碳气沉积(CVD)沉积的碳或类金刚石碳(DLC)沉积物。 优选地,在探针 - 阴极结构中使用固体石墨插入件(84)来代替现有技术中使用的铝衬套。 CVD或DLC探针面(90)被激光刻划以允许电阻调整以匹配可用的触发电压信号并且减少电老化。

    METHOD AND APPARATUS FOR PRODUCING AND USING PLASMA
    15.
    发明申请
    METHOD AND APPARATUS FOR PRODUCING AND USING PLASMA 审中-公开
    生产和使用等离子体的方法和装置

    公开(公告)号:WO1996041361A2

    公开(公告)日:1996-12-19

    申请号:PCT/US1996003859

    申请日:1996-03-22

    CPC classification number: G21B3/00 Y02E30/18

    Abstract: This invention relates generally to the field of plasmas and, more particularly, to the creation of very high density stable plasmas inside solids. Very high density stable plasmas have many applications, including among many others, plasma solid fusion, transmutation reactions, matter, particles and energy storage, etc... For decades, scientists have tried unsuccessfully to increase the storage density of particles such as hydrogen through diverse methods such as liquefaction or magnetic confinement. To date the results have not been up to expectations. This invention provides the means and technique necessary to increase the density of particles to another order of magnitude by showing how to create a very high density stable plasma inside a solid. This invention also presents the means and techniques necessary to exploit some of the obvious applications, such as plasma solid fusion, energy, particles, and heat production, among many others.

    Abstract translation: 本发明一般涉及等离子体领域,更具体地涉及在固体内部产生非常高密度的稳定等离子体。 非常高密度的稳定等离子体有许多应用,其中包括等离子体固体融合,蜕变反应,物质,颗粒和能量储存等。几十年来,科学家们一直尝试不成功地提高颗粒如氢气的储存密度 不同的方法,如液化或磁约束。 到目前为止,结果还没有达到预期。 本发明提供了通过显示如何在固体中产生非常高密度的稳定等离子体而将颗粒密度增加到另一个数量级所需的手段和技术。 本发明还提出了利用诸如等离子体固体融合,能量,颗粒和热产生之类的一些显而易见的应用所必需的手段和技术。

    INERTIAL-ELECTROSTATIC CONFINEMENT PARTICLE GENERATOR
    16.
    发明申请
    INERTIAL-ELECTROSTATIC CONFINEMENT PARTICLE GENERATOR 审中-公开
    惯性静电颗粒发生器

    公开(公告)号:WO1995030235A2

    公开(公告)日:1995-11-09

    申请号:PCT/US1995005185

    申请日:1995-04-25

    CPC classification number: H05H3/06 G21B1/03 Y02E30/14

    Abstract: An apparatus for generating neutrons and protons which includes a vacuum vessel having anode means substantially within vacuum vessel. The apparatus further includes at least one cathode wire grid which defines a central volume and is concave towards a central region of the vacuum vessel. The cathode wire grid is permeable to gas and to ions and disposed between the anode means. The apparatus further includes a means for introducing controlled amounts of reactive gas into the vacuum vessel and the central volume to obtain an internal pressure of the vacuum vessel. Finally, the apparatus includes means for applying an electric potential between the anode means and the cathode wire grid to produce a glow discharge caused by ions produced between the anode means and the cathode wire grid. The glow discharge is substantially determined by design criteria of the cathode wire grid and the internal pressure of the vacuum vessel.

    Abstract translation: 一种用于产生中子和质子的装置,其包括具有基本上位于真空容器内的阳极装置的真空容器。 该装置还包括限定中心体积并且朝向真空容器的中心区域凹陷的至少一个阴极线栅格。 阴极线栅对气体和离子是可渗透的,并且设置在阳极装置之间。 该装置还包括用于将受控量的反应气体引入真空容器和中心体积以获得真空容器的内部压力的装置。 最后,该装置包括在阳极装置和阴极线栅之间施加电位以产生由阳极装置和阴极线栅之间产生的离子引起的辉光放电的装置。 辉光放电基本上由阴极线栅格的设计标准和真空容器的内部压力确定。

    PEDESTAL EDGE EMITTER AND NON-LINEAR CURRENT LIMITERS FOR FIELD EMITTER DISPLAYS AND OTHER ELECTRON SOURCE APPLICATIONS
    18.
    发明申请
    PEDESTAL EDGE EMITTER AND NON-LINEAR CURRENT LIMITERS FOR FIELD EMITTER DISPLAYS AND OTHER ELECTRON SOURCE APPLICATIONS 审中-公开
    用于场发射显示器和其他电子源应用的PEDESTAL边缘发射极和非线性电流限制

    公开(公告)号:WO1997009730A2

    公开(公告)日:1997-03-13

    申请号:PCT/US1996013329

    申请日:1996-08-19

    CPC classification number: H01J1/3042 H01J2201/30423 H01J2201/319

    Abstract: A microelectronic field emitter device (50) comprising a substrate (78), a conductive pedestal (64) on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer (66) having an edge (68). The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50 wt.%), SiO2 + Cr (0 to 50 wt.%), SiO + Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate (240), an emitter conductor (242) on such substrate, and a current limiter stack (244) formed on said substrate, such stack having a top (246) and at least one edge (248, 250), a resistive strap (266) on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

    Abstract translation: 一种微电子场发射器件(50),包括衬底(78),所述衬底上的导电基座(64)和所述基座上的边缘发射极,其中所述边缘发射电极包括发射极帽层(66) (68)。 本发明还考虑了一种用于微电子场发射器件的电流限制器,其包括选自SiO,SiO + Cr(0至50重量%),SiO 2 + Cr(0至50重量%)的半绝缘材料。 %),夹在电子注入器和空穴注入器之间的SiO + Nb,Al2O3和SixOyNz。 本发明的另一方面涉及一种微电子场发射器件,其包括衬底(240),在该衬底上的发射极导体(242)以及形成在所述衬底上的限流器叠层(244),所述叠层具有顶部(246) 以及至少一个边缘(248,250),在所述堆叠的顶部上的电阻带(266),所述边缘在与所述发射极导体电接触的所述边缘上延伸; 并且电流限制器堆叠上的电阻带上的发射极电极。

    ISOTOPE SEPARATION METHOD FOR PREPARING NOVEL SEMICONDUCTORS, AND SEMICONDUCTOR JUNCTIONS CONTAINING THE NOVEL SEMICONDUCTOR
    19.
    发明申请
    ISOTOPE SEPARATION METHOD FOR PREPARING NOVEL SEMICONDUCTORS, AND SEMICONDUCTOR JUNCTIONS CONTAINING THE NOVEL SEMICONDUCTOR 审中-公开
    用于制备新型半导体的同位素分离方法,以及包含新型半导体的半导体结

    公开(公告)号:WO1997006548A2

    公开(公告)日:1997-02-20

    申请号:PCT/RO1995000009

    申请日:1995-07-31

    Abstract: An isotope separation method for use in the field of semiconductors is provided. The method is an improvement to the invention disclosed in OSIM patent application no. 95-01302 of 13.07.1995. Specifically, a method is provided for processing a semiconductor element having a cubic, rhombic or hexagonal crystalline structure and containing at least two stable isotopes, to enable the concentration of the various isotopes to be altered. The method comprises exposing the element to a temperature adjacent to its diffusion temperature, simultaneously applying to the element a 1 Amp, 4-30 KV electric current proportional to the ionisation energy expressed in Kcal/g mol, arranging the element being processed in a gaseous medium containing at least one inert gas to prevent oxidation of the element, and continuing the process for around 2 hours. An antimony (Sb) element with an isotope ratio of Sb 121 (P1,P2):Sb 123 (P3) = 1.70 is also provided.

    Abstract translation: 提供了一种用于半导体领域的同位素分离方法。 该方法是对OSIM专利申请no。 95-01302,共13.07.1995。 具体地,提供了一种用于处理具有立方晶系,菱形或六边形晶体结构并且含有至少两个稳定同位素的半导体元件的方法,以使各种同位素的浓度能够被改变。 该方法包括将元件暴露于与其扩散温度相邻的温度,同时向元件施加与以Kcal / g mol表示的电离能成比例的1 Amp,4-30KV电流,将待处理的元件设置在气态 含有至少一种惰性气体的介质以防止元件的氧化,并持续该过程约2小时。 还提供同位素比Sb 121(P1,P2):Sb 123(P3)= 1.70的锑(Sb)元素。

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