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    Field emission display with carbon nanotube emitter and its manufacturing method
    15.
    发明专利
    Field emission display with carbon nanotube emitter and its manufacturing method 有权
    碳纳米管发射体的场发射显示及其制造方法

    公开(公告)号：JP2005063969A

    公开(公告)日：2005-03-10

    申请号：JP2004233675

    申请日：2004-08-10

    Applicant: Samsung Sdi Co Ltd ,  三星エスディアイ株式会社

    Inventor： CHOI JUN-HEE ,  ZOULKARNEEV ANDREI

    IPC: H01J29/04 ,  H01J1/05 ,  H01J1/14 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01J9/14 ,  H01J29/02 ,  H01J29/48 ,  H01J31/12

    CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J3/021 ,  H01J9/025 ,  H01J9/148 ,  H01J29/481 ,  H01J2201/30469

    Abstract: PROBLEM TO BE SOLVED: To apply a field emission display with a carbon nanotube emitter and its manufacturing method. SOLUTION: The CNT and FED, and their manufacturing method is characterized by including such a mask layers that a gate accumulated substance formed around a CNT emitter covers an emitter electrode around the CNT emitter; gate insulating films formed on the mask layers sequentially; gate electrodes; first silicon oxide films (SiO x ) (X x and/or the gate insulating films, a flow rate of silane (SiH 4 ) is maintained at 50 sccm to 700 sccm and a flow rate of dinitrogen monoxide (N 2 O) is maintained at 700 sccm to 4,500 sccm. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：应用具有碳纳米管发射体的场发射显示器及其制造方法。 解决方案：CNT和FED及其制造方法的特征在于包括形成在CNT发射体周围形成的栅极积聚物覆盖CNT发射体周围的发射极的掩模层; 依次形成在掩模层上的栅极绝缘膜; 栅电极; 第一氧化硅膜（SiO x SB）（X <2）; 和聚焦电极。 每个第一氧化硅膜的厚度为≥2μm，优选为3μm-15μm。 在制造第一SiO x 和/或栅极绝缘膜的工艺中，硅烷的流速（SiH 4 ）保持在50sccm至700sccm，流动 一氧化二氮（N 2 O）的速率保持在700sccm至4500sccm。 版权所有（C）2005，JPO＆NCIPI

    Discharge lamp and discharge electrode
    17.
    发明专利
    Discharge lamp and discharge electrode 有权
    放电灯和放电电极

    公开(公告)号：JP2005346954A

    公开(公告)日：2005-12-15

    申请号：JP2004162102

    申请日：2004-05-31

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

    IPC: H01J61/06 ,  H01J1/00 ,  H01J1/05 ,  H01J1/14 ,  H01J1/308 ,  H01J61/067 ,  H01J61/073

    CPC classification number: H01J1/308 ,  H01J61/0677 ,  H01J61/0737

    Abstract: PROBLEM TO BE SOLVED: To provide a first discharge electrode achieving both high-efficiency secondary electron emission and long life, as well as a discharge lamp using the same.
    SOLUTION: The first discharge electrode is equipped with an electron emission layer made of a wide forbidden band-width semiconductor substrate 1. The first discharge electrode defines a convex part (a rectangular parallelepiped column) R
    i, j-2 , R
    i, j-1 , R
    i, j with an upper end face opposing a second discharge electrode and side walls to be faces not seen from a vertical direction of the upper end face, and is equipped with the electron emission layer, in which dangling bonds on the surface of the wide forbidden band-width semiconductor substrate 1 exposed to the side walls of the rectangular parallelepiped column R
    i, j-2 , R
    i, j-1 , R
    i, j are terminated with hydrogen 3.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 解决的问题：提供实现高效二次电子发射和长寿命的第一放电电极以及使用该放电电极的放电灯。 解决方案：第一放电电极配备有由宽禁带宽半导体衬底1制成的电子发射层。第一放电电极限定凸部（矩形平行六面体柱）R i，j- 2 ，R i，j-1 ，R SB，i，j ，上端面与第二放电电极相对， 上端面的垂直方向，并且配备有电子发射层，其中暴露于长方体柱R SB的侧壁上的宽禁带宽半导体衬底1的表面上的悬挂键 ，j-2，R i，j-1，R i，j-1，R SB，i，j，...用氢3终止。（C） JPO＆NCIPI

    МАТЕРИАЛ ДЛЯ ИЗГОТОВЛЕНИЯ МНОГООСТРИЙНОГО АВТОЭМИССИОННОГО КАТОДА
    19.
    发明专利
    МАТЕРИАЛ ДЛЯ ИЗГОТОВЛЕНИЯ МНОГООСТРИЙНОГО АВТОЭМИССИОННОГО КАТОДА 未知

    公开(公告)号：RU2674752C1

    公开(公告)日：2018-12-13

    申请号：RU2018103509

    申请日：2018-01-31

    Applicant: FEDERALNOE GOSUDARSTVENNOE BYUDZHETNOE OBRAZOVATELNOE UCHREZHDENIE VYSSHEGO OBRAZOVANIYA SARATOVSKIJ

    Inventor： KOLESNIKOVA ANNA SERGEEVNA

    IPC: H01J1/05 ,  H01J1/30 ,  H01J9/02

    Abstract: Изобретениеотноситсяк областиэлектроннойтехникии можетбытьиспользованоприизготовленииизделийсветоиндикаторнойтехникии эмиссионнойэлектроникинаосновеавтоэлектроннойэмиссиимногоострийныхуглеродныхструктур. Материалдляизготовлениямногоострийногоавтоэмиссионногокатодасодержитстеклоуглеродс нанопорами, заполненнымиатомамицезияметодомдопированияс концентрациейатомовцезия, определяемойразмераминанопор. Изобретениепозволяетповыситьэффективностьработымногоострийныхавтоэмиссионныхкатодовзасчётрегулированияэмиссионныхсвойствстеклоуглерода. 4 з.п. ф-лы, 5 ил.

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