公开(公告)号：CN106104744A

公开(公告)日：2016-11-09

申请号：CN201580013749.2

申请日：2015-01-21

Applicant: 拉莫特特拉维夫大学有限公司

Inventor： 罗伊·希洛 ,  佑希·雷瑞 ,  阿迪·阿里

IPC: H01J3/12 ,  H01J37/26

CPC classification number: H01J37/153 ,  H01J37/26 ,  H01J37/261 ,  H01J37/263 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/2614

Abstract: 提供一种调节一电子束的方法。所述方法包括通过一相位掩模发送一波束，所述相位掩模选择成在所述波束的一横截面上空间地调节所述波束的一相位。

公开(公告)号：CN102097265B

公开(公告)日：2012-07-11

申请号：CN201010617898.9

申请日：2010-12-31

Applicant: 中国航天科技集团公司第五研究院第五一○研究所

Inventor： 柳青 ,  孔风连 ,  李存惠 ,  秦晓刚 ,  汤道坦 ,  陈益峰

IPC: H01J3/12 ,  H01J3/02

Abstract: 本发明涉及一种增强电子束流均匀性的装置，属于空间应用技术领域。本发明所述的一种增强电子束流均匀性的装置为电子散射网，所述电子散射网设置在距离产生散射型低能电子流的设备的发射口30～70mm处，电子散射网中孔隙的直径为0.1～0.5mm，电子散射网采用金属材料制成；散射型低能电子流的设备为电子枪时，将电子枪中的灯丝通过固定架固定在石棉座上。使用本发明的电子散射网，可使散射型低能电子流的设备发射出的电子束流散射面积增大大，电子束流均匀性增强，使用本发明的石棉座固定后的电子枪的灯丝不易发生形变。

公开(公告)号：CN1779895A

公开(公告)日：2006-05-31

申请号：CN200410009814.8

申请日：2004-11-18

Applicant: 中国科学院电子学研究所

Inventor： 李实 ,  王景田 ,  关靖

IPC: H01J29/48 ,  H01J3/12 ,  H01J17/56 ,  C04B35/00

Abstract: 本发明涉及电真空微波器件技术领域，特别是电子枪系统中阴极和阳极之间的多层波纹陶瓷结构，其也可在各种高压环境下或者真空环境较差的高压环境下使用。该多层波纹陶瓷结构，其由多层圆筒状波纹陶瓷构成，每层圆筒状波纹陶瓷依序相互套装，共一中心轴；每两层圆筒状波纹陶瓷之间有一间隙，每个间隙中有一环形连接部将所有圆筒状波纹陶瓷层固接成一整体。本发明大大提高真空微波器件的成品率和使用寿命，可在各种高压环境下或者真空环境较差的高压环境下使用。

公开(公告)号：JPS54100662A

公开(公告)日：1979-08-08

申请号：JP691478

申请日：1978-01-25

Applicant: NIPPON ELECTRON OPTICS LAB

Inventor： ISOBE MORIYUKI

IPC: H01J37/04 ,  H01J3/12 ,  H01J37/153 ,  H01L21/027

Abstract: PURPOSE:To prevent the performance deterioration of a unit with contamination of a stop reduced by providing the stop with a larger diameter than the spread of the electron beam near the main surface of a reduction lens and by detecting an electron-beam current flowing into a board through scanning. CONSTITUTION:Stop 10 with a larger diameter than the spread of an electron beam is arranged near the main surface of reduction lens 3. Start signal (a) is outputted first from start/end circuit 15 to make pulse generator 16 output a pulse signal, a deflecting waveform is generated by scanning-signal generator 17, and the signal is supplied to correcting deflector 9 via amplifier 18, thereby deflecting the electron beam. As a result, the electron beam scans on stop 10. An electron-beam current flowing into stop 10 is led to amplifier 14 and then inputted to gates 20 and 21. Pulse generator 19, on the other hand, generates two kinds of gate signals; one is applied to gate 20, and the other is to gate 21, so that each gate will discriminate the peak value of each input signal at a left or rignt deflection point. Their outputs are inputted to amplifier 18 by way of differential amplifier 24, etc., to adjust deflecting signals, thereby correcting the lens axis.

公开(公告)号：JPS5486262A

公开(公告)日：1979-07-09

申请号：JP15409077

申请日：1977-12-21

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： TAKIGAWA TADAHIRO

IPC: H01J37/06 ,  G03F1/00 ,  G03F1/76 ,  H01J3/12 ,  H01J37/305 ,  H01L21/027

Abstract: PURPOSE:To form an accurate pattern on a mask by determining a beam diameter or the dozing amount corresponding to an exposed region and by exposing the corresponding region by a desired electron beam. CONSTITUTION:Electron gun 2 consists of grounded anode 36, Wehnelt cylinder 38 applied with a high negative voltage, and emitter 40 focusing electrons, and emitter 40 uses a prismatic electrode with its tip pointed relatively. Adjusting a current flowing to heater 42 or/and a high voltage between emitter 40 and Wehnelt cylinder 38 varies the diameter of the electron beam at crossover point 24. Then the projective image at point 24 is projected on the photo resist on mask 22 and the region of the photo resist to be exposed changes. In this case, the electron beam diameter at point 24 is set according to the 1st and 2nd operation modes of CPU34 and the fixed region is exposed through the x-directional scanning on mask 22.

公开(公告)号：JPS5450955U

公开(公告)日：1979-04-09

申请号：JP12357877

申请日：1977-09-16

IPC: H01J9/42 ,  H01J3/12 ,  H01J31/15

公开(公告)号：CN207602507U

公开(公告)日：2018-07-10

申请号：CN201721642914.3

申请日：2017-11-30

Applicant: 武汉普迪真空科技有限公司

Inventor： 周焱文

IPC: H01J3/04 ,  H01J3/12

Abstract: 本实用新型涉及射频离子源技术领域，尤其是一种新型射频离子源，包括射频离子源本体和安装射频离子源本体的底座，所述底座的上侧中部横向开设有凹槽，所述凹槽内安装有直线电机，所述直线电机的上部安装有射频离子源本体，所述底座的上部一侧开设有与凹槽垂直的滑槽，所述安装孔内均固定设置有轴承，两个所述调节螺杆远离限位螺母的一端均贯穿第二螺孔与轴承连接，所述滑槽靠近固定块的两侧均设置有调节块，两个所述调节螺杆分别插设在两个第一螺孔内，两个所述调节块的上部均设置有固定装置，两个所述固定装置的顶部通过锁紧螺栓连接，本实用新型结构简单，方便使用，便于调节，能够适用不同设备安装使用。

公开(公告)号：CN221747151U

公开(公告)日：2024-09-20

申请号：CN202420269259.5

申请日：2024-02-04

Applicant: 苏州臻泰真空技术有限公司

Inventor： 董所涛 ,  陈靖玉

IPC: H01J3/04 ,  H01J3/12

Abstract: 本实用新型公开了一种射频离子源装置，包括：底座，设置在所述底座顶部的射频离子源本体和移动框，以及设置在所述移动框内部的夹持组件；在对使用设备进行夹持安装时，通过气缸、三角块、推杆、弧形杆、第一滚筒和第二滚筒的配合，若干弧形杆和推杆的顶部会形成夹持空间，三角块和推杆上升时，弧形杆位于移动框内部的一端，会沿着三角块的倾斜面向下移动，使得对称分布在推杆两侧的弧形杆，位于移动框顶部的一端相互靠近，进而逐渐缩小夹持空间，使得夹持空间可以根据所需进行有效的调节，对于不同体积使用设备的夹持较为灵活，并且夹持空间形成三点接触夹持，使得对使用设备形成有效的固定，从而提高了装置的实用性和稳定进行射频的效果。

公开(公告)号：CN212322948U

公开(公告)日：2021-01-08

申请号：CN202020536808.2

申请日：2020-04-13

Applicant: 中国兵器科学研究院宁波分院

Inventor： 李晓静 ,  张旭 ,  赵仕燕 ,  夏超翔 ,  张宁

IPC: H01J3/12 ,  H01J3/36

Abstract: 本实用新型涉及射频离子源离子束束径约束器，其特征在于：所述束径约束器包括具有可供离子束穿过的中空结构的底座、多个叶片及驱动机构；所述多个叶片设于底座一端并环绕中空结构呈圆周排布，多个叶片的尾端伸入中空结构所在区域以围合形成可供离子束穿过的光阑，所述驱动机构可驱动叶片的尾端相对叶片排布形成的圆周中心运动以调节光阑大小。本实用新型还涉及一种包括束径约束器的控制装置，采用该装置进行离子束束径控制，操作方便，调节精度好，效率高，而且成本节约。(ESM)同样的发明创造已同日申请发明专利

公开(公告)号：JP2002528878A

公开(公告)日：2002-09-03

申请号：JP2000578836

申请日：1999-10-27

IPC: G21K5/02 ,  H01J3/12 ,  H01J35/04 ,  H01J35/06 ,  H01J35/14

Abstract: A variable spot size x-ray tube comprises a cathode having an electron emitting surface providing an electron beam that travels essentially along the tube axis of symmetry to an anode. The anode, spaced from the cathode, includes a target, the front surface of which is disposed at an oblique angle with respect to the axis of symmetry. The potential of the anode is generally positive with respect to that of the cathode. The cathode is heated to a temperature at which electrons are emitted by the thermionic emission process. Current from the cathode can be controlled by varying the cathode temperature if the cathode is operated in the temperature limited region. The incident electron beam forms a spot on the target surface whereupon x-rays are produced in response to impingement of the electron beam on the target. The x-rays propagate outwardly from the target spot through a vacuum window to form a beam of x-radiation outside the x-ray tube. An aperture grid is disposed between the cathode and the anode, and has a central aperture permitting the electron beam to pass therethrough. The aperture grid further has a variable voltage applied to it which may be positive, negative, or equal to the potential of the cathode. The voltage on the control grid is used to control the diameter of the electron beam which impinges upon the target. Specifically, the electron beam diameter varies in correspondence with the variable aperture grid voltage, and selective variation of the electron beam diameter results in a corresponding variation in size of the x-ray imaging spot.