公开(公告)号：US20160035539A1

公开(公告)日：2016-02-04

申请号：US14447446

申请日：2014-07-30

Applicant: Lauri Sainiemi ,  Tapani Levola ,  Pasi Saarikko

Inventor： Lauri Sainiemi ,  Tapani Levola ,  Pasi Saarikko

IPC: H01J37/305

CPC classification number: H01J37/3053 ,  B81C1/00547 ,  B81C99/0025 ,  B81C2201/0143 ,  G02B5/1857

Abstract: A microfabrication apparatus for fabricating a microstructure on a substrate is disclosed and comprises a partitioning system arranged to provide an aperture, a particle source that can generate a beam of particles for patterning the substrate and a substrate holder which supports the substrate. Relative motion is effected between the aperture and the substrate over a portion of the substrate's surface so that different points on the surface portion are exposed at different times. Whilst that motion is ongoing, one or more exposure conditions are varied so that the different points are subject to different exposure conditions. Corresponding microfabrication processes and products obtained thereby are also disclosed.

Abstract translation: 公开了一种用于在基板上制造微结构的微细加工装置，其包括设置成提供孔的分隔系统，可以产生用于图案化基板的颗粒束的颗粒源和支撑基板的基板支架。 在基板表面的一部分上的孔和基板之间进行相对运动，使得表面部分上的不同点在不同时间被曝光。 虽然该运动正在进行，一个或多个曝光条件是变化的，以便不同的点受到不同的曝光条件的影响。 还公开了相应的微加工工艺和由此获得的产品。

公开(公告)号：US20150372225A1

公开(公告)日：2015-12-24

申请号：US14310844

申请日：2014-06-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

Abstract translation: 一种形成存储器件的方法，其在一个实施例中可包括使用导电掩模和减去蚀刻方法在第一电极上形成磁性隧道结。 在形成磁性隧道结之后，沉积至少一个电介质层以封装磁性隧道结。 离子束蚀刻/离子束研磨然后可以去除存在于导电掩模上的至少一个电介质层的部分，其中至少一个电介质层的剩余部分存在于第一电极上。 然后可以形成与导电掩模接触的第二电极。

公开(公告)号：US09138918B2

公开(公告)日：2015-09-22

申请号：US14455745

申请日：2014-08-08

Applicant: Honeywell International Inc.

Inventor： Robert Jon Carlson

IPC: C23F1/00 ,  B29C33/38 ,  H01L21/306 ,  C23F1/02 ,  B81C99/00 ,  B29C41/00 ,  B29C59/14 ,  B29C59/16 ,  B81B7/00

CPC classification number: B29C33/3842 ,  B29C41/00 ,  B29C59/14 ,  B29C59/16 ,  B29K2909/00 ,  B29K2995/0037 ,  B81B7/00 ,  B81B2201/05 ,  B81B2201/058 ,  B81B2203/0127 ,  B81C99/009 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/034 ,  C23F1/02 ,  H01L21/30604 ,  Y10T428/24496

Abstract: The invention is directed to a patterned aerogel-based layer that serves as a mold for at least part of a microelectromechanical feature. The density of an aerogel is less than that of typical materials used in MEMS fabrication, such as poly-silicon, silicon oxide, single-crystal silicon, metals, metal alloys, and the like. Therefore, one may form structural features in an aerogel-based layer at rates significantly higher than the rates at which structural features can be formed in denser materials. The invention further includes a method of patterning an aerogel-based layer to produce such an aerogel-based mold. The invention further includes a method of fabricating a microelectromechanical feature using an aerogel-based mold. This method includes depositing a dense material layer directly onto the outline of at least part of a microelectromechanical feature that has been formed in the aerogel-based layer.

Abstract translation: 本发明涉及用作至少部分微机电特征的模具的图案化气凝胶基层。 气凝胶的密度小于MEMS制造中使用的典型材料的密度，例如多晶硅，氧化硅，单晶硅，金属，金属合金等。 因此，可以以明显高于在较致密的材料中形成结构特征的速率的速率在气凝胶层中形成结构特征。 本发明还包括一种图案化气凝胶层以产生这种基于气凝胶的模具的方法。 本发明还包括使用基于气凝胶的模具制造微机电特征的方法。 该方法包括将致密材料层直接沉积在已经形成在气凝胶层中的微机电特征的至少一部分的轮廓上。

公开(公告)号：US08866240B2

公开(公告)日：2014-10-21

申请号：US13655198

申请日：2012-10-18

Applicant: Margaret H. Abraham ,  David P. Taylor

Inventor： Margaret H. Abraham ,  David P. Taylor

IPC: H01L29/20 ,  B82Y30/00 ,  H01L21/306 ,  B81C1/00

CPC classification number: H01L21/30604 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y30/00

Abstract: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.

Abstract translation: 提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。 根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。 根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。 根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

公开(公告)号：US20140245608A1

公开(公告)日：2014-09-04

申请号：US14349477

申请日：2012-10-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hiroyuki Morimoto ,  Kosuke Kurachi

IPC: B23K26/36 ,  B23K26/40 ,  B41J2/16 ,  B23K26/12

CPC classification number: B41J2/16 ,  B23K26/0622 ,  B23K26/1224 ,  B23K26/361 ,  B23K26/40 ,  B23K26/60 ,  B23K2103/50 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B81C1/00515 ,  B81C2201/0143 ,  Y10T29/49401

Abstract: In removal processing using a pulsed laser beam, processing deviation occurs in the depthwise direction to cause a processing error in a predetermined removal shape.A first pulsed laser beam L1 is a pulsed laser beam having a wavelength that exhibits transmittance to a workpiece 6, and a second pulsed laser beam L2 is a pulsed laser beam having a wavelength that exhibits absorption to the workpiece 6. The first pulsed laser beam L1 is focused into the workpiece 6, and a focal point P1 of the first pulsed laser beam L1 is scanned along the outline of a predetermined removal region R1 to form a modified portion 6A along the outline of the predetermined removal region R1. Next, removal processing is performed by scanning the second pulsed laser beam L2 in a region enclosed by the modified portion 6A.

Abstract translation: 在使用脉冲激光束的去除处理中，在深度方向发生处理偏差，导致预定的去除形状的处理误差。 第一脉冲激光束L1是具有对工件6具有透射率的波长的脉冲激光束，第二脉冲激光束L2是具有对工件6具有吸收的波长的脉冲激光束。第一脉冲激光束 L1被聚焦到工件6中，并且沿着预定去除区域R1的轮廓扫描第一脉冲激光束L1的焦点P1，以沿着预定去除区域R1的轮廓形成修改部分6A。 接下来，通过在由修改部分6A包围的区域中扫描第二脉冲激光束L2来执行去除处理。

公开(公告)号：US08790863B2

公开(公告)日：2014-07-29

申请号：US13881504

申请日：2011-10-26

Applicant: Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

Inventor： Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

IPC: G03F7/38 ,  B82B3/00 ,  G03F7/16

CPC classification number: G03F7/2059 ,  B81C1/00531 ,  B81C2201/0143 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2251 ,  H01J37/3174 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31796 ,  H01L21/0331 ,  H01L22/12 ,  H01L51/0014 ,  H01L51/0048

Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.

Abstract translation: 在固态基板成像方法中，将蒸气冷凝成固态基板表面的无定形固体水凝结物层。 然后通过沿着衬底表面扫描电子束通过水凝结层产生衬底表面的至少一部分的图像。 在电子束扫描期间维持水凝结层的完整性，以防止电子束扫描期间电子束污染到达衬底。 然后可以通过在该区域处引导电子束来局部地去除该层的一个或多个区域。 材料层可以沉积在水冷凝物层的顶部和在一个或多个区域暴露的任何基底表面，并且水凝结物层和该层顶部上的材料层的区域可以被去除，留下图案化的材料层 在基板上。

公开(公告)号：US08673167B2

公开(公告)日：2014-03-18

申请号：US13361079

申请日：2012-01-30

Applicant: Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

Inventor： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01L23/481 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2103/50 ,  B81B2203/0353 ,  B81B2203/0384 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/30608 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

Abstract translation: 在由硅制成的待加工的片状物体中形成孔的激光加工方法包括凹陷形成步骤，在与物体的激光入射面侧的孔对应的部分形成凹部，凹部开口 到激光入射面; 改变区域形成步骤，通过在所述凹陷形成步骤之后会聚所述物体上的激光，沿着与所述物体中的所述孔相对应的部分形成改质区域; 以及在改质区域形成工序后对物体进行各向异性蚀刻的蚀刻工序，以沿着改质区域选择性地进行蚀刻，并在物体上形成孔; 其中所述改性区域形成步骤将所述改性区域或从所述改质区域延伸的断裂暴露于所述凹陷的内表面。

公开(公告)号：US08603920B2

公开(公告)日：2013-12-10

申请号：US12805569

申请日：2010-08-05

Applicant: Katsuhiko Kanamori ,  Masashi Totokawa ,  Hiroshi Tanaka

Inventor： Katsuhiko Kanamori ,  Masashi Totokawa ,  Hiroshi Tanaka

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/005 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81C1/00484 ,  B81C2201/0143 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/32137

Abstract: A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.

Abstract translation: 半导体器件的制造方法包括：将激光束照射在单晶硅衬底上，并且将衬底上的激光束扫描以使得衬底的一部分多晶化，其中至少部分多晶结晶部分 将衬底暴露在衬底的表面上; 并用蚀刻剂蚀刻基片的多晶化部分。 在这种情况下，处理时间得到改善。

公开(公告)号：US20130309445A1

公开(公告)日：2013-11-21

申请号：US13952141

申请日：2013-07-26

Applicant: The University Of Tokyo ,  Fujikura Ltd.

Inventor： Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Kazuhito TABATA ,  Masakazu SUGIYAMA

IPC: B32B3/26 ,  B81C1/00

CPC classification number: B81C1/00547 ,  B23K26/50 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

Abstract translation: 一种制造具有微小孔的基体的方法，包括：通过用具有脉冲持续时间的第一激光的焦点在基体上扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 并通过蚀刻去除第一改质区和第三改质区而形成微孔。

公开(公告)号：US20130288182A1

公开(公告)日：2013-10-31

申请号：US13881504

申请日：2011-10-26

Applicant: Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

Inventor： Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

IPC: G03F7/20

CPC classification number: G03F7/2059 ,  B81C1/00531 ,  B81C2201/0143 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2251 ,  H01J37/3174 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31796 ,  H01L21/0331 ,  H01L22/12 ,  H01L51/0014 ,  H01L51/0048

Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.

Abstract translation: 在固态基板成像方法中，将蒸气冷凝成固态基板表面的无定形固体水凝结物层。 然后通过沿着衬底表面扫描电子束通过水凝结层产生衬底表面的至少一部分的图像。 在电子束扫描期间维持水凝结层的完整性，以防止电子束扫描期间电子束污染到达衬底。 然后可以通过在该区域处引导电子束来局部地去除该层的一个或多个区域。 材料层可以沉积在水冷凝物层的顶部和在一个或多个区域暴露的任何基底表面，并且水凝结物层和该层顶部上的材料层的区域可以被去除，留下图案化的材料层 在基板上。