公开(公告)号：US07005657B1

公开(公告)日：2006-02-28

申请号：US11051018

申请日：2005-02-04

Applicant: Russell J. Low ,  Gordon C. Angel

Inventor： Russell J. Low ,  Gordon C. Angel

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/1501 ,  H01J2237/20228 ,  H01J2237/3045 ,  H01J2237/30472

Abstract: An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.

Abstract translation: 离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。 响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。 当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。 光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。 植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

公开(公告)号：US20040222376A1

公开(公告)日：2004-11-11

申请号：US10838342

申请日：2004-05-05

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuko Sasaki ,  Mitsugu Sato

IPC: H01J001/62 ,  G01N023/00

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J2237/043 ,  H01J2237/049 ,  H01J2237/28

Abstract: When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.

Abstract translation: 当主要由提取电压V1和加速电压V0表示的电子枪的条件改变时，通过聚光透镜将带电粒子束一次聚焦在固定位置，并且从冷凝器的透镜激发计算虚拟阴极位置 透镜和电子枪的机械位置关系来设定光学条件。 为了更精确地设置光学条件，在聚光透镜的交叉位置处设置偏转电极装置，并且将电压以恒定周期施加到偏转电极装置，以便控制聚光透镜的透镜激发，使得 在诸如CRT的图像显示单元上图像的移动量​​最小化。

公开(公告)号：US06781140B1

公开(公告)日：2004-08-24

申请号：US09659087

申请日：2000-09-11

Applicant: David Martin Platton King ,  Barrie James Hughes

Inventor： David Martin Platton King ,  Barrie James Hughes

IPC: H01J3730

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/30488 ,  H01J2237/30494 ,  H01J2237/31769

Abstract: A method of writing a pattern on the surface of a substrate by an electron beam is provided comprising exposing the substrate surface to an electron beam controlled to progressively describe the pattern by stepped movement of a focussed spot of the beam over the surface, and varying the exposure of the surface to the beam by selectably modulating the beam in the periods between successive movement steps to reduce the level of electron dose in predetermined positions of the beam spot on the surface.

Abstract translation: 提供了通过电子束在基板的表面上写图案的方法，包括将基板表面暴露于被控制以逐渐描述图案的电子束，通过在表面上的光束的聚焦点的分阶移动， 通过在连续移动步骤之间的周期中可选择地调制光束来将表面暴露于光束，以减小表面上的光束点的预定位置中的电子剂量的水平。

公开(公告)号：US20040021095A1

公开(公告)日：2004-02-05

申请号：US10354959

申请日：2003-01-31

Inventor： Yasunari Sohda ,  Yoshinori Nakayama ,  Osamu Kamimura ,  Masato Muraki ,  Masaki Takakuwa

IPC: H01J037/302

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24405

Abstract: The present invention intends to improve the writing accuracy in an electron beam writing system using discrete multi beams in which the interval of the beams is larger than the size of the beams. In electron beam writing equipment which uses means generating multi electron beams; means on/off controlling each of the multi electron beams according to pattern data that should be written; and means deflecting the multi electron beams together, thereby performing writing on a wafer, one side of a unit writing area of the multi electron beams is larger than substantially twice the interval of the electron beams or substantially an integral multiple thereof.

Abstract translation: 本发明旨在提高使用离散多光束的电子束写入系统中的写入精度，其中光束的间隔大于光束的尺寸。 在使用产生多个电子束的装置的电子束写入设备中; 根据应写入的图形数据来开/关控制多个电子束的装置; 并且意味着将多个电子束偏转在一起，从而在晶片上进行写入，多个电子束的单位写入区域的一侧大于电子束的间隔的两倍或其基本上的整数倍。

公开(公告)号：US5384466A

公开(公告)日：1995-01-24

申请号：US64685

申请日：1993-05-20

Applicant: Kazumitsu Nakamura ,  Rikio Tomiyoshi

Inventor： Kazumitsu Nakamura ,  Rikio Tomiyoshi

IPC: H01J37/30 ,  H01J37/302 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J2237/043

Abstract: The object of the invention is to provide an electron beam lithography apparatus and a method thereof which, while maintaining a predetermined pattern drawing accuracy, enables the pattern drawing speed to be improved still further. An electron beam lithography apparatus comprising exposing an electron beam 2 from an electron gun 1, interrupting the electron beam 2 by means of a blanker 6, further deflecting the electron beam 2 by applying a voltage to a deflector 7, wherein the electron beam lithography apparatus is characterized by selecting one of a first predetermined period of time required for the voltage of the deflector 7 to be stabilized and a second period of time which is shorter than the foregoing first period of time, and wherein the blanker 6 is operated according to the result of the foregoing selection.

Abstract translation: 本发明的目的是提供一种电子束光刻设备及其方法，在保持预定的图形绘制精度的同时，能够进一步提高图形绘制速度。 一种电子束光刻设备，包括从电子枪1暴露电子束2，通过消隐器6中断电子束2，通过向偏转器7施加电压进一步偏转电子束2，其中电子束光刻设备 其特征在于，选择要稳定的偏转器7的电压所需的第一预定时间段和比上述第一时间段短的第二时间段中的一个，并且其中，消音器6根据 上述选择的结果。

公开(公告)号：US4710640A

公开(公告)日：1987-12-01

申请号：US757285

申请日：1985-07-22

Applicant: Katsuhiro Kawasaki

Inventor： Katsuhiro Kawasaki

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  H01J37/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/31776

Abstract: An electron beam lithograhy apparatus capable of uniformly exposing the surface of a sample by an electron beam including a generator for generating the electron beam, members for shaping the electron beam, members for focusing the shaped electron beam on the surface of the sample, devices for permitting the focused electron beam to scan the surface of the sample, and devices for deflecting the electron beam to blank, unblank and blank in turn, wherein when the electrom beam is deflected in one direction, a sequence of blanking, unblanking and blanking is made of the beam.

Abstract translation: 一种电子束光刻装置，其能够通过包括用于产生电子束的发生器的电子束均匀地暴露样品的表面，用于使电子束成形的构件，用于将成形电子束聚焦在样品表面上的构件，用于 允许聚焦的电子束扫描样品的表面，以及用于依次将电子束偏转到空白，非空白和空白的装置，其中当电磁波束在一个方向上偏转时，进行一系列的消隐，非白化和消隐 的梁。

公开(公告)号：US4634871A

公开(公告)日：1987-01-06

申请号：US691255

申请日：1985-01-14

Applicant: Wolfgang Knauer

Inventor： Wolfgang Knauer

IPC: H01J37/147 ,  H01J37/21 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027 ,  H01J3/14 ,  H01J3/26

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/31776

Abstract: Charged particle source (14) delivers beam (20) which is collimated onto first aperture plate having first aperture (28). The beam passing therethrough is deflected by deflection plates (32, 34, 38 and 40) with respect to second aperture (46) in second aperture plate (44). The image (50) of the second aperture (46) is focused on the target plane (16) and the projected image of the footprint (58) of the deflected beam is focused on the target plane (16). When these images overlap, a shaped beam (56) passes through. Scanning of the beam across the target plane by deflection plates (52 and 54) permits exposure of sharp-edged features (62) by positioning the image (60a) inside the margin (64) and then scanning the image (50b) thereacross to expose the sharp edge and thereupon picking up the image (60) so that they both scan across the feature to be exposed.

Abstract translation: 带电粒子源（14）传送光束（20），其被准直到具有第一孔径（28）的第一孔板上。 穿过其中的光束相对于第二孔板（44）中的第二孔（46）由偏转板（32,34,38和40）偏转。 第二孔径（46）的图像（50）聚焦在目标平面（16）上，并且偏转光束的足迹（58）的投影图像被聚焦在目标平面（16）上。 当这些图像重叠时，成形梁（56）穿过。 通过偏转板（52和54）将光束扫过目标平面允许通过将图像（60a）定位在边缘（64）内部然后扫描其上的图像（50b）而暴露出尖锐边缘（62） 锋利的边缘并随后拾取图像（60），使得它们都扫描要暴露的特征。

公开(公告)号：EP2966504A1

公开(公告)日：2016-01-13

申请号：EP15175373.8

申请日：2015-07-06

Applicant: IMS Nanofabrication AG

Inventor： Platzgummer, Elmar

IPC: G03F7/20 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern (160) is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel (162) is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案，其用于在带电粒子多光束处理装置中的目标上曝光期望图案，以便匹配可能具有不同类型的参考写入工具：所需图案（160）被提供为 图形表示适用于目标图像区域上的参考工具，如光栅图形。 使用卷积核心（162），其描述从图形表示的元素到以所述元件的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：EP2927748A2

公开(公告)日：2015-10-07

申请号：EP15175372.0

申请日：2015-07-06

Applicant: IMS Nanofabrication AG

Inventor： Platzgummer, Elmar

IPC: G03F7/20 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern (160) is provided as a graphical representation suitable for the reference tool, such as a raster graphics (161), on the image area on the target. A convolution kernel (162) is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案，其用于在带电粒子多光束处理装置中的目标上曝光期望图案，以便匹配参考写入工具，可能的不同类型和/或用于补偿成像的偏差 沿着目标上的图像区域中的至少一个方向从临界尺寸的期望值到目标上的图案定义装置：所需图案（160）被提供为适合于参考工具的图形表示，例如光栅图形 （161），在目标上的图像区域上。 使用卷积核心（162），其描述从图形表示的元素到以所述元件的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：EP0811999B1

公开(公告)日：2014-07-09

申请号：EP97108821.6

申请日：1997-06-02

Applicant: Hitachi, Ltd.

Inventor： Todokoro, Hideo ,  Yamada, Osamu

IPC: H01J37/28

CPC classification number: H01J37/28 ,  G02B21/002 ,  H01J2237/043 ,  H01J2237/22