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    Low stress photo-sensitive resin with sponge-like structure and devices manufactured employing same
    204.
    发明授权
    Low stress photo-sensitive resin with sponge-like structure and devices manufactured employing same 有权
    具有海绵状结构的低应力光敏树脂和使用其制造的装置

    公开(公告)号：US08053377B2

    公开(公告)日：2011-11-08

    申请号：US12892190

    申请日：2010-09-28

    Applicant: Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

    Inventor： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: B41J2/16 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00666 ,  B81C2201/017 ,  B81C2201/053

    Abstract: System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.

    Abstract translation: 用于形成包括MEMS器件结构的结构的系统和方法。 为了防止由牺牲材料（例如光致抗蚀剂）的固化过程引起的基板翘曲，以及随后的高温工艺步骤，改进的牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊的 功能组。 可以通过在衬底中形成沟槽并用牺牲材料填充沟槽来形成结构。 牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊功能组。 在完成进一步的工艺步骤之后，将牺牲材料从沟槽中移除。

    Sacrificial spacer process and resultant structure for MEMS support structure
    205.
    发明申请
    Sacrificial spacer process and resultant structure for MEMS support structure 失效
    用于MEMS支撑结构的牺牲隔离工艺和结构

    公开(公告)号：US20080094686A1

    公开(公告)日：2008-04-24

    申请号：US11583575

    申请日：2006-10-19

    Applicant: Gregory David U'Ren

    Inventor： Gregory David U'Ren

    IPC: G02B26/00

    CPC classification number: B81B3/0072 ,  B81B2201/047 ,  B81B2203/0109 ,  B81B2203/053 ,  B81C2201/017 ,  G02B26/001

    Abstract: Disclosed is a microelectromechanical systems (MEMS) device and method of manufacturing the same. MEMS such as an interferometric modulator include a sidewall spacer formed adjacent to a movable mirror. The sidewall spacer may be a sacrificial spacer that is removed during fabrication, or it may remain in the final product. Increased clearance is provided between the movable mirror and a support structure during actuation of the movable mirror, thereby avoiding contact during operation of the interferometric modulator. The deformable layer may be deposited in a more continuous fashion over the contour of a lower layer as determined by the contour of the sidewall spacer, resulting in a stronger and more resilient deformable layer.

    Abstract translation: 公开了一种微机电系统（MEMS）装置及其制造方法。 诸如干涉式调制器的MEMS包括邻近可移动反射镜形成的侧壁间隔物。 侧壁间隔件可以是在制造期间被去除的牺牲间隔物，或者它可以保留在最终产品中。 在可移动镜的致动期间，在可移动镜和支撑结构之间提供增加的间隙，从而避免在干涉式调制器的操作期间的接触。 可变形层可以以更连续的方式沉积在由侧壁间隔物的轮廓确定的较低层的轮廓上，从而形成更坚固且更具弹性的可变形层。

    Silicon on insulator standoff and method for manufacture thereof
    207.
    发明申请
    Silicon on insulator standoff and method for manufacture thereof 审中-公开
    硅绝缘体间隔及其制造方法

    公开(公告)号：US20030197176A1

    公开(公告)日：2003-10-23

    申请号：US10128368

    申请日：2002-04-22

    Applicant: Glimmerglass Networks, Inc.

    Inventor： James P. Spallas ,  Andres Fernandez ,  Thomas DeBey ,  Lawrence P. Muray

    IPC: H01L029/04

    CPC classification number: B81C1/00119 ,  B81B2201/042 ,  B81C2201/0104 ,  B81C2201/014 ,  B81C2201/017 ,  B81C2201/019

    Abstract: Method for fabricating ultrathin gaps producing ultrashort standoffs in array structures includes sandwiching a patterned device layer between a silicon standoff layer and a silicon support layer, providing that the back surfaces of the respective silicon support layer and the standoff layer are polished to a desired thickness corresponding to the desired standoff height on one side and to at least a minimum height for mechanical strength on the opposing side, as well as to a desired smoothness. Standoffs and mechanical supports are then fabricated by etching to produce voids with the dielectric oxides on both sides of the device layer serving as suitable etch stops. Thereafter, the exposed portions of the oxide layers are removed to release the pattern, and a package layer is mated with the standoff voids to produce a finished device. The standoff layer can be fabricated to counteract curvature.

    Abstract translation: 用于制造在阵列结构中产生超短距离的超薄间隙的方法包括在硅隔离层和硅支撑层之间夹着图案化的器件层，条件是相应的硅支撑层和支座层的背面被抛光到相应的所需厚度 达到一侧上所需的间隔高度，并且至少在相对侧上的机械强度的最小高度以及期望的平滑度。 然后通过蚀刻制造支座和机械支撑件以产生空隙，其中装置层两侧的电介质氧化物用作合适的蚀刻停止点。 此后，去除氧化物层的暴露部分以释放图案，并且将封装层与间隙空隙配合以产生成品装置。 可以制造隔离层以抵消曲率。

    Method of fabrication of an infrared radiation detector and infrared detector device
    209.
    发明授权
    Method of fabrication of an infrared radiation detector and infrared detector device 有权
    制造红外辐射探测器和红外探测器的方法

    公开(公告)号：US06274462B1

    公开(公告)日：2001-08-14

    申请号：US09702501

    申请日：2000-10-31

    Applicant: Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

    Inventor： Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

    IPC: H01L2120

    CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

    Abstract translation: 公开了一种制造红外检测器的方法，一种控制多晶SiGE层中的应力的方法和一种红外检测器件。 制造方法包括以下步骤：在衬底上形成牺牲层; 图案化所述牺牲层; 在所述牺牲层上建立基本上由多晶SiGe组成的层; 在所述多晶SiGe层上沉积红外吸收剂; 然后除去牺牲层。 沉积在衬底上的多晶SiGe层中控制应力的方法是基于沉积压力的变化。 红外检测器装置包括有源区和红外吸收体，其中有源区包括多晶SiGe层，并悬浮在衬底上。

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