Anodic Bonding of Dielectric Substrates
    205.
    发明申请
    Anodic Bonding of Dielectric Substrates 有权
    介质基板的阳极接合

    公开(公告)号:US20160304335A1

    公开(公告)日:2016-10-20

    申请号:US15098353

    申请日:2016-04-14

    Inventor: Benedikt ZEYEN

    Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

    Abstract translation: 具有图案化电介质阻挡层和可氧化金属层的第一富离子电介质基片阳极结合到第二富离子电介质基片上。 为了结合基板,可氧化的金属层被氧化。 电介质阻挡层可以抑制这些离子迁移到粘结线,否则可能会损害粘结强度。 因此,当接合两个基板时,在晶片之间保持牢固的结合。

    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures
    208.
    发明申请
    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures 有权
    在电化学制造结构期间维持层的平行化和/或实现层的期望厚度的方法和装置

    公开(公告)号:US20140231263A1

    公开(公告)日:2014-08-21

    申请号:US14191061

    申请日:2014-02-26

    Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

    Abstract translation: 本发明的一些实施例提供了用于电化学制造多层结构(例如中尺度或微结构)的方法和装置,其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料(例如层)的并行维护。 一些方法涉及在平坦化期间使用夹具,其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具,其相对于第一沉积层或相对于在制造过程期间形成的一些其它层,相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中,平面化可以通过研磨发生,而其他实施例可以使用金刚石切片机。

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