Abstract:
A second interlayer insulation layer (15) is formed under an upper wiring electrode (16) serving as a power feed line to an upper electrode (13) in each thin-film type electron source array so as to prevent a failure of short-circuit. Further, an electron emission portion is limited by the second interlayer insulation layer (15) so as to cover defects unevenly distributed in the border between an electron acceleration layer (12) and a first interlayer insulation layer (14). Thus, a failure of time dependent insulation breakdown is suppressed.
Abstract:
Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate; an emitter section formed of a dielectric material; a first electrode formed on the top surface of the emitter section; and a second electrode formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.
Abstract:
A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.
Abstract:
During each of frame periods, an image including gradation information is displayed at once on a display screen. Electrons are emitted in a second stage from all the pixels, independent of row scanning, separately from a first stage based on the row scanning. A display has a plurality of electron emitters arrayed in association with a plurality of pixels, and the image is displayed by electrons emitted from electron emitters. In each of the electron emitters, electrons are emitted from a first electrode toward an emitter to charge the emitter in the first stage, and the electrons are emitted from the emitter in the second stage.
Abstract:
A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.
Abstract:
An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.
Abstract:
In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.
Abstract:
An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.
Abstract:
A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.
Abstract:
A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).