公开(公告)号：US20060125730A1

公开(公告)日：2006-06-15

申请号：US10523717

申请日：2002-10-18

Applicant: Masakazu Sagawa ,  Toshiaki Susunoki ,  Mutsumi Suzuki

Inventor： Masakazu Sagawa ,  Toshiaki Susunoki ,  Mutsumi Suzuki

IPC: G09G3/22

CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/3125

Abstract: A second interlayer insulation layer (15) is formed under an upper wiring electrode (16) serving as a power feed line to an upper electrode (13) in each thin-film type electron source array so as to prevent a failure of short-circuit. Further, an electron emission portion is limited by the second interlayer insulation layer (15) so as to cover defects unevenly distributed in the border between an electron acceleration layer (12) and a first interlayer insulation layer (14). Thus, a failure of time dependent insulation breakdown is suppressed.

Abstract translation: 在每个薄膜型电子源阵列中的上电极（13）的用作馈电线的上布线电极（16）下面形成第二层间绝缘层（15），以防止短路 。 此外，电子发射部分被第二层间绝缘层（15）限制，以便覆盖在电子加速层（12）和第一层间绝缘层（14）之间的边界处不均匀分布的缺陷。 因此，抑制了与时间有关的绝缘击穿的失败。

公开(公告)号：US20060043863A1

公开(公告)日：2006-03-02

申请号：US11210279

申请日：2005-08-23

Applicant: Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

Inventor： Hirofumi Yamaguchi ,  Kei Sato ,  Toshikatsu Kashiwaya

IPC: H01J1/14 ,  H01J1/05

CPC classification number: H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3227 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3279 ,  C04B2235/3298 ,  C04B2235/5445 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/79 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate; an emitter section formed of a dielectric material; a first electrode formed on the top surface of the emitter section; and a second electrode formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.

Abstract translation: 提供一种能够抑制由于其重复使用而导致的电子发射量减少的压电薄膜型电子发射体，其具有高耐久性。 电子发射体包括基板; 由电介质材料形成的发射极部分; 形成在所述发射部的上表面上的第一电极; 以及形成在发射极部分的底表面上的第二电极。 形成发射极部分的电介质材料包含具有电场诱发应变的电介质组合物（即在垂直于电场的方向上测量的4kV / mm的电场施加下的百分比变形）为0.07％ 或更少。

公开(公告)号：US20060012278A1

公开(公告)日：2006-01-19

申请号：US11180975

申请日：2005-07-13

Applicant: Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Ritsu Tanaka

Inventor： Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Ritsu Tanaka

IPC: H01J1/02

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.

Abstract translation: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有：包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体通过气溶胶沉积法或溶胶浸渍法形成，其上表面的表面粗糙度控制在Ra为0.1〜3的范围内。

公开(公告)号：US20050280346A1

公开(公告)日：2005-12-22

申请号：US11145525

申请日：2005-06-03

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: G09G3/22 ,  H01J3/00

CPC classification number: G09G3/22 ,  B82Y10/00 ,  H01J2201/3125 ,  H01J2329/00

Abstract: During each of frame periods, an image including gradation information is displayed at once on a display screen. Electrons are emitted in a second stage from all the pixels, independent of row scanning, separately from a first stage based on the row scanning. A display has a plurality of electron emitters arrayed in association with a plurality of pixels, and the image is displayed by electrons emitted from electron emitters. In each of the electron emitters, electrons are emitted from a first electrode toward an emitter to charge the emitter in the first stage, and the electrons are emitted from the emitter in the second stage.

Abstract translation: 在每个帧周期期间，在显示屏幕上立即显示包括灰度信息的图像。 独立于行扫描，电子在所有像素的第二阶段中与基于行扫描的第一阶段分开地发射。 显示器具有与多个像素相关联地排列的多个电子发射器，并且通过从电子发射器发射的电子来显示图像。 在每个电子发射器中，电子从第一电极发射到发射极，以在第一级中对发射极充电，并且电子在第二级中从发射极发射。

公开(公告)号：US06873115B2

公开(公告)日：2005-03-29

申请号：US10349995

申请日：2003-01-24

Applicant: Masakazu Sagawa ,  Mutsumi Suzuki ,  Toshiaki Kusunoki

Inventor： Masakazu Sagawa ,  Mutsumi Suzuki ,  Toshiaki Kusunoki

IPC: H01J1/30 ,  G09G3/10 ,  G09G3/22 ,  G11C11/24 ,  H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J9/022 ,  H01J9/241 ,  H01J2201/3125

Abstract: A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.

公开(公告)号：US20050029544A1

公开(公告)日：2005-02-10

申请号：US10935801

申请日：2004-09-07

Applicant: Alexander Govyadinov ,  Michael Regan

Inventor： Alexander Govyadinov ,  Michael Regan

IPC: H01J1/312 ,  H01J29/46 ,  H01L29/06 ,  H01L31/0328

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/467 ,  H01J2201/304 ,  H01J2201/3125

Abstract: An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

公开(公告)号：US06844664B2

公开(公告)日：2005-01-18

申请号：US10258601

申请日：2002-04-24

Applicant: Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

Inventor： Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

IPC: H01J1/304 ,  H01J1/312 ,  H01J9/02 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Abstract translation: 在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。 在n型硅衬底（1）的背面设有欧姆电极（2）。 施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。 以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由 表面电极（7）。 强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上，并且各自具有使得发生电子隧道现象的程度的膜厚度。

公开(公告)号：US06794805B1

公开(公告)日：2004-09-21

申请号：US09382956

申请日：1999-08-25

Applicant: Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Naomasa Oka ,  Nobuyoshi Koshida

Inventor： Takashi Hatai ,  Takuya Komoda ,  Yoshiaki Honda ,  Koichi Aizawa ,  Yoshifumi Watabe ,  Tsutomu Ichihara ,  Yukihiro Kondo ,  Naomasa Oka ,  Nobuyoshi Koshida

IPC: H01J130

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/3125

Abstract: An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.

Abstract translation: 场发射电子源的阵列和制备阵列的方法，其从场致发射电子源的表面电极的期望区域放电。 场发射电子源10包括p型硅衬底1的导电衬底; 在p型硅衬底的一个主表面上的扩散层条纹的n型区域8，形成在由氧化的多孔多晶硅制成的n型区域8上的强电场漂移层6，用于漂移电子注入 从n型区域8; 强场漂移层6之间的多晶硅层3; 薄导电薄膜条的表面电极7以与强场漂移层6和多晶硅层3的条纹交叉的方式形成。通过选择一对n型区域8和表面电极7 从而由于要被施加的表面电极7的组合和被施加的n型区域8而使从交叉点发射的电子能够从表面电极7的期望的区域排出电子。

公开(公告)号：US06787992B2

公开(公告)日：2004-09-07

申请号：US10028994

申请日：2001-12-28

Applicant: Takashi Chuman ,  Takamasa Yoshikawa ,  Takuya Hata ,  Kazuto Sakemura ,  Takashi Yamada ,  Nobuyasu Negishi ,  Shingo Iwasaki ,  Hideo Satoh ,  Atsushi Yoshizawa ,  Kiyohide Ogasawara

Inventor： Takashi Chuman ,  Takamasa Yoshikawa ,  Takuya Hata ,  Kazuto Sakemura ,  Takashi Yamada ,  Nobuyasu Negishi ,  Shingo Iwasaki ,  Hideo Satoh ,  Atsushi Yoshizawa ,  Kiyohide Ogasawara

IPC: H01J162

CPC classification number: H01J1/60 ,  B82Y10/00 ,  H01J1/30 ,  H01J11/10 ,  H01J29/92 ,  H01J31/12 ,  H01J31/127 ,  H01J2201/3125 ,  H01J2211/46 ,  H01L27/3288

Abstract: A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.

Abstract translation: 显示装置具有由设置在基板上并且平行延伸的多个第一电极构成的发光区域，设置在第一电极上且大致垂直于第一电极延伸的多个第二电极，以及用于发射的多个发射部位 电子或光分别连接到第一和第二电极之间的多个交叉点并且布置在基板上并且具有围绕基板上的发射区域的周边区域。 在该显示装置中，第一和第二组用于第一和第二电极的外部重复端子组在外围区域的一部分中并排设置。

公开(公告)号：US06720717B2

公开(公告)日：2004-04-13

申请号：US10252800

申请日：2002-09-24

Applicant: Takuya Komoda ,  Yoshiyuki Takegawa ,  Koichi Aizawa ,  Takashi Hatai ,  Tsutomu Ichihara ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Toru Baba

Inventor： Takuya Komoda ,  Yoshiyuki Takegawa ,  Koichi Aizawa ,  Takashi Hatai ,  Tsutomu Ichihara ,  Yoshiaki Honda ,  Yoshifumi Watabe ,  Toru Baba

IPC: H01L105

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

Abstract translation: 在由诸如玻璃或陶瓷基板的绝缘基板构成的基板（1）的一个主表面侧上形成下层电极（2）和由层状导电碳化物层构成的表面电极（7）。 在下电极（2）上形成非掺杂多晶硅层（3）。 在多晶硅层（3）上形成由氧化的多孔多晶硅构成的电子迁移层（6）。 电子转移层（6）由包括多晶硅的复合纳米晶体层和与多晶硅的晶界相邻的许多纳米晶体硅构成。 当在下电极（2）和表面电极（7）之间施加电压使得表面电极（7）具有较高电位时，电子从下电极（2）向表面电极（7）注入，并且 通过电子转移层（6）通过表面电极（7）发射。