Cold cathode type flat panel display
    201.
    发明申请
    Cold cathode type flat panel display 审中-公开
    冷阴极型平板显示屏

    公开(公告)号:US20060125730A1

    公开(公告)日:2006-06-15

    申请号:US10523717

    申请日:2002-10-18

    Abstract: A second interlayer insulation layer (15) is formed under an upper wiring electrode (16) serving as a power feed line to an upper electrode (13) in each thin-film type electron source array so as to prevent a failure of short-circuit. Further, an electron emission portion is limited by the second interlayer insulation layer (15) so as to cover defects unevenly distributed in the border between an electron acceleration layer (12) and a first interlayer insulation layer (14). Thus, a failure of time dependent insulation breakdown is suppressed.

    Abstract translation: 在每个薄膜型电子源阵列中的上电极(13)的用作馈电线的上布线电极(16)下面形成第二层间绝缘层(15),以防止短路 。 此外,电子发射部分被第二层间绝缘层(15)限制,以便覆盖在电子加速层(12)和第一层间绝缘层(14)之间的边界处不均匀分布的缺陷。 因此,抑制了与时间有关的绝缘击穿的失败。

    Electron emitter
    203.
    发明申请
    Electron emitter 有权
    电子发射体

    公开(公告)号:US20060012278A1

    公开(公告)日:2006-01-19

    申请号:US11180975

    申请日:2005-07-13

    Abstract: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.

    Abstract translation: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有:包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体通过气溶胶沉积法或溶胶浸渍法形成,其上表面的表面粗糙度控制在Ra为0.1〜3的范围内。

    Display device
    204.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号:US20050280346A1

    公开(公告)日:2005-12-22

    申请号:US11145525

    申请日:2005-06-03

    CPC classification number: G09G3/22 B82Y10/00 H01J2201/3125 H01J2329/00

    Abstract: During each of frame periods, an image including gradation information is displayed at once on a display screen. Electrons are emitted in a second stage from all the pixels, independent of row scanning, separately from a first stage based on the row scanning. A display has a plurality of electron emitters arrayed in association with a plurality of pixels, and the image is displayed by electrons emitted from electron emitters. In each of the electron emitters, electrons are emitted from a first electrode toward an emitter to charge the emitter in the first stage, and the electrons are emitted from the emitter in the second stage.

    Abstract translation: 在每个帧周期期间,在显示屏幕上立即显示包括灰度信息的图像。 独立于行扫描,电子在所有像素的第二阶段中与基于行扫描的第一阶段分开地发射。 显示器具有与多个像素相关联地排列的多个电子发射器,并且通过从电子发射器发射的电子来显示图像。 在每个电子发射器中,电子从第一电极发射到发射极,以在第一级中对发射极充电,并且电子在第二级中从发射极发射。

    Field emission electron source and production method thereof
    207.
    发明授权
    Field emission electron source and production method thereof 失效
    场发射电子源及其制备方法

    公开(公告)号:US06844664B2

    公开(公告)日:2005-01-18

    申请号:US10258601

    申请日:2002-04-24

    Abstract: In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

    Abstract translation: 在场致发射型电子源(10)中,在n型硅衬底(1)上设置强电场漂移层(6)和由金薄膜构成的表面电极(7)。 在n型硅衬底(1)的背面设有欧姆电极(2)。 施加直流电压,使得表面电极(7)在与欧姆电极(2)相关的电位变为正。 以这种方式,经由n型硅衬底(6)从欧姆电极(2)注入强场漂移层(6)的电子在强场漂移层(6)中漂移,并经由 表面电极(7)。 强场漂移层(6)具有:部分地由构成强场漂移层(6)的半导体层形成的多个纳米级的半导体纳米晶体(63); 以及多个绝缘膜(64),其各自形成在每个半导体纳米晶体(63)的表面上,并且各自具有使得发生电子隧道现象的程度的膜厚度。

    Field emission electron source, method of producing the same, and use of the same
    208.
    发明授权
    Field emission electron source, method of producing the same, and use of the same 失效
    场发射电子源,其制造方法及其用途

    公开(公告)号:US06794805B1

    公开(公告)日:2004-09-21

    申请号:US09382956

    申请日:1999-08-25

    Abstract: An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.

    Abstract translation: 场发射电子源的阵列和制备阵列的方法,其从场致发射电子源的表面电极的期望区域放电。 场发射电子源10包括p型硅衬底1的导电衬底; 在p型硅衬底的一个主表面上的扩散层条纹的n型区域8,形成在由氧化的多孔多晶硅制成的n型区域8上的强电场漂移层6,用于漂移电子注入 从n型区域8; 强场漂移层6之间的多晶硅层3; 薄导电薄膜条的表面电极7以与强场漂移层6和多晶硅层3的条纹交叉的方式形成。通过选择一对n型区域8和表面电极7 从而由于要被施加的表面电极7的组合和被施加的n型区域8而使从交叉点发射的电子能够从表面电极7的期望的区域排出电子。

    Field emission-type electron source
    210.
    发明授权
    Field emission-type electron source 失效
    场发射型电子源

    公开(公告)号:US06720717B2

    公开(公告)日:2004-04-13

    申请号:US10252800

    申请日:2002-09-24

    Abstract: A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

    Abstract translation: 在由诸如玻璃或陶瓷基板的绝缘基板构成的基板(1)的一个主表面侧上形成下层电极(2)和由层状导电碳化物层构成的表面电极(7)。 在下电极(2)上形成非掺杂多晶硅层(3)。 在多晶硅层(3)上形成由氧化的多孔多晶硅构成的电子迁移层(6)。 电子转移层(6)由包括多晶硅的复合纳米晶体层和与多晶硅的晶界相邻的许多纳米晶体硅构成。 当在下电极(2)和表面电极(7)之间施加电压使得表面电极(7)具有较高电位时,电子从下电极(2)向表面电极(7)注入,并且 通过电子转移层(6)通过表面电极(7)发射。

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