公开(公告)号：EP1208403A1

公开(公告)日：2002-05-29

申请号：EP00962031.1

申请日：2000-08-01

Applicant: ADC Telecommunications, Inc.

Inventor： ZHANG, Nan

IPC: G02B26/02 ,  H02N1/00 ,  B81B3/00 ,  G02B6/26

CPC classification number: G02B6/357 ,  B81B2201/033 ,  B81B2201/045 ,  B81C1/00182 ,  B81C2201/0109 ,  B81C2203/0136 ,  G02B6/3514 ,  G02B6/3518 ,  G02B6/3544 ,  G02B6/3584 ,  H02N1/008

Abstract: A MEMS-based optical switch (100) having improved characteristics and methods for manufacturing the same are provided. In accordance with one embodiment, an optical switch includes a single comb (122) drive actuator (104) having a deflecting beam structure (124) and a mirror (102) coupled to the actuator. The mirror is capable of being moved between an extended position interposed between waveguide channels (106) and a retracted position apart from the waveguide channels. The actuator applies a force capable of deflecting the beam structure and moving the mirror to one of the extended positions or the retracted position and the beam structure returns the mirror to the other of the extended position or the retracted position in the absence of the application of force.

公开(公告)号：EP0712498A1

公开(公告)日：1996-05-22

申请号：EP94924124.0

申请日：1994-08-04

Applicant: ANALOG DEVICES, INCORPORATED

Inventor： CHAU, Kevin, H., L. ,  SALTMARSH, Michael, P. ,  CHURCH, Deborah, A.

IPC: B81B3 ,  G01P15

CPC classification number: B81C1/0092 ,  B81B2203/0109 ,  B81C1/00944 ,  B81C2201/0109 ,  G01P15/0802 ,  G01P2015/0814

Abstract: A method and apparatus for forming bridges between surfaces of a suspended microstructure and other surfaces of the suspended microstructure or particularly placed anchors on the die in order to increase the stiffness and lateral strength of the microstructure during fabrication. Once fabrication is completed, the bridges are cut by a laser thus fully releasing the microstructure into its final suspended and resilient condition.

公开(公告)号：EP0596455B1

公开(公告)日：1996-01-31

申请号：EP93117739.8

申请日：1993-11-02

Applicant: CSEM, Centre Suisse d'Electronique et de Microtechnique S.A.

Inventor： Moret, Jean-Marc

IPC: C23C16/00 ,  H01H1/00

CPC classification number: B81C1/0015 ,  B81C2201/0109 ,  B81C2201/0132 ,  C23C16/01 ,  H01H1/0036

公开(公告)号：EP0659910A2

公开(公告)日：1995-06-28

申请号：EP94118223.0

申请日：1994-11-18

Applicant: MEGA CHIPS CORPORATION ,  Crystal Device Corporation

Inventor： Shiindo, Masahiro, c/o Mega Chips Corporation ,  Kosaka, Daisuke, c/o Mega Chips Corporation ,  Hikawa, Tetsuo, c/o Mega Chips Corporation ,  Takata, Akira, c/o Mega Chips Corporation ,  Ukai, Yukihiro, c/o Mega Chips Corporation ,  Sawada, Takashi, c/o Mega Chips Corporation ,  Asakawa, Toshifumi

IPC: C30B25/00 ,  C23C16/48

CPC classification number: H01J37/32678 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/0038 ,  B81C2201/0109 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  G02F2001/136281 ,  H01H59/0009 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

公开(公告)号：EP3310707A1

公开(公告)日：2018-04-25

申请号：EP15896501.2

申请日：2015-06-22

Applicant: INTEL Corporation

Inventor： LIN, Kevin Lai ,  PAWASHE, Chytra ,  KIM, Raseong ,  YOUNG, Ian A. ,  SINGH, Kanwal Jit ,  BRISTOL, Robert L.

IPC: B81B7/02 ,  H01L21/8238

CPC classification number: B81B7/007 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/00246 ,  B81C1/00301 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

Abstract: A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.

公开(公告)号：EP2462050B1

公开(公告)日：2017-11-08

申请号：EP10737938.0

申请日：2010-08-05

Applicant: STMicroelectronics Srl

Inventor： CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

公开(公告)号：EP3228584A1

公开(公告)日：2017-10-11

申请号：EP15865926.8

申请日：2015-07-31

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： JING, Errong

IPC: B81C1/00

CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).

Abstract translation: 一种用于制造MEMS扭转静电致动器的方法，包括：提供衬底（10），其中衬底（10）包括第一硅层（100），掩埋氧化物层（200）和第二硅层 依次层压; 图案化第一硅层（100）并暴露掩埋氧化物层（200）以形成与外围区域（140）分离的矩形上电极板（120），其中上电极板（120）和外围区域 ）通过仅使用悬臂梁（130）连接，并且在外围区域（140）上形成暴露掩埋氧化物层（200）的凹陷部分（110）; 图案化第二硅层（300）并暴露掩埋氧化物层（200）以形成后腔（310），其中后腔（310）位于第二硅层（300）的对应于第一硅层 所述电极板120覆盖所述上电极板120对应区域面积的40％〜60％，并靠近所述悬臂梁130的一端。 暴露第二硅层（300），并悬挂上电极板（120）和悬臂梁（130）; 并在第二硅层（300）上分别形成上接触电极（400）和下接触电极（500）。

公开(公告)号：EP3154898A1

公开(公告)日：2017-04-19

申请号：EP14730169.1

申请日：2014-06-16

Applicant: Epcos AG ,  Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： HENN, Gudrun ,  GIESEN, Marcel ,  DEN DEKKER, Arnoldus ,  PORNIN, Jean-Louis ,  SAINT-PATRICE, Damien ,  REIG, Bruno

IPC: B81C1/00

CPC classification number: B81C1/00293 ,  B81B7/0041 ,  B81B2203/0315 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The present invention concerns a microelectronic package (1) comprising a microelectronic structure (2) having at least a first opening (3) and defining a first cavity (4), a capping layer (9) having at least a second opening (10) and defining a second cavity (11) which is connected to the first cavity (4), wherein the capping layer (9) is arranged over the microelectronic structure (2) such that the second opening (10) is arranged over the first opening (3), and a sealing layer (13) covering the second opening (10), thereby sealing the first cavity (4) and the second cavity (11). Moreover, the present invention concerns a method of manufacturing the microelectronic package (1).

Abstract translation: 本发明涉及包括具有至少第一开口（3）并限定第一空腔（4）的微电子结构（2）的微电子封装（1），具有至少第二开口（10）的封盖层（9） 并且限定连接到所述第一腔体（4）的第二空腔（11），其中所述覆盖层（9）布置在所述微电子结构（2）上方，使得所述第二开口（10）布置在所述第一开口 3）和覆盖第二开口（10）的密封层（13），从而密封第一腔（4）和第二腔（11）。 此外，本发明涉及一种制造微电子封装（1）的方法。

公开(公告)号：EP2631939B1

公开(公告)日：2016-04-06

申请号：EP11852932.0

申请日：2011-05-19

Applicant: Lexvu Opto Microelectronics Technology (Shanghai) Ltd

Inventor： MAO, Jianhong ,  TANG, Deming

IPC: H01L21/822 ,  B81B7/00

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81B2207/07 ,  B81C1/00293 ,  B81C2201/0109 ,  B81C2201/0125 ,  B81C2203/0145 ,  G01P15/0802 ,  G01P2015/0828 ,  H03H3/0072

公开(公告)号：EP2450309B1

公开(公告)日：2016-01-27

申请号：EP11187357.6

申请日：2011-10-31

Applicant: Honeywell International Inc.

Inventor： Detry, James F.

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/0109