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    Etch process for etching microstructures
    251.
    发明申请
    Etch process for etching microstructures 失效
    用于蚀刻微结构的蚀刻工艺

    公开(公告)号：US20030071015A1

    公开(公告)日：2003-04-17

    申请号：US10265598

    申请日：2002-10-08

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Jeffrey D. Chinn ,  Sofiane Soukane

    IPC: C03C015/00

    CPC classification number: B81C1/00928 ,  B81C2201/112 ,  G02B6/122 ,  G02B6/3692 ,  G02B2006/12176

    Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.

    Abstract translation: 公开了一种从基板释放微机电装置的两步法。 第一步包括用夹杂在两个含硅层之间的氧化硅层与氟化氢 - 水气体混合物进行各向同性蚀刻，所述上层硅层将从底层硅层或衬底分离足以形成开口但不 以释放上覆层，第二步骤包括加入干燥剂以代替残留在开口中的水分，并溶解开口中可能导致静电的残留物。

    Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
    252.
    发明申请
    Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants 有权
    通过用多个顺序蚀刻剂去除牺牲层来制造微机械装置的方法

    公开(公告)号：US20020197761A1

    公开(公告)日：2002-12-26

    申请号：US10154150

    申请日：2002-05-22

    Applicant: REFLECTIVITY, INC.

    Inventor： Satyadev R. Patel ,  Andrew G. Huibers ,  Gregory P. Schaadt ,  Peter J. Heureux

    IPC: H01L021/00 ,  H01L021/302 ,  H01L021/461

    CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

    Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

    Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

    Monolithic micromechanical apparatus with suspended microstructure
    255.
    发明授权
    Monolithic micromechanical apparatus with suspended microstructure 失效
    具有悬浮微结构的单片微机械装置

    公开(公告)号：US6009753A

    公开(公告)日：2000-01-04

    申请号：US203946

    申请日：1998-12-02

    Applicant: Robert W. K. Tsang ,  Theresa A. Core ,  Steven J. Sherman ,  A. Paul Brokaw

    Inventor： Robert W. K. Tsang ,  Theresa A. Core ,  Steven J. Sherman ,  A. Paul Brokaw

    IPC: B81B3/00 ,  B81C99/00 ,  G01P15/08 ,  G01P15/125 ,  G01P15/13

    CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81C1/00214 ,  B81C1/0092 ,  B81C99/0035 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  B81C2201/112 ,  B81C2203/0735 ,  B81C2203/0742 ,  G01P2015/0814

    Abstract: A monolithic capacitance-type microstructure includes a semiconductor substrate, a plurality of posts extending from the surface of the substrate, a bridge suspended from the posts, and an electrically-conductive, substantially stationary element anchored to the substrate. The bridge includes an element that is laterally movable with respect to the surface of the substrate. The substantially stationary element is positioned relative to the laterally movable element such that the laterally movable element and the substantially stationary element form a capacitor. Circuitry may be disposed on the substrate and operationally coupled to the movable element and the substantially stationary element for processing a signal based on a relative positioning of the movable element and the substantially stationary element. A method for fabricating the microstructure and the circuitry is disclosed.

    Abstract translation: 单片电容型微结构包括半导体衬底，从衬底的表面延伸的多个柱，悬置在柱上的桥，以及锚定到衬底的导电的，基本上固定的元件。 该桥包括相对于基板的表面可横向移动的元件。 基本上固定的元件相对于横向可移动元件定位，使得横向可移动元件和基本上固定的元件形成电容器。 电路可以设置在基板上并且可操作地耦合到可移动元件和基本上固定的元件，用于基于可移动元件和基本上静止的元件的相对定位来处理信号。 公开了一种用于制造微结构和电路的方法。

    Method of producing micromechanical devices
    256.
    发明授权
    Method of producing micromechanical devices 失效
    微机械装置的制造方法

    公开(公告)号：US5411769A

    公开(公告)日：1995-05-02

    申请号：US128459

    申请日：1993-09-29

    Applicant: Larry J. Hornbeck

    Inventor： Larry J. Hornbeck

    IPC: B81B3/00 ,  C23C16/44 ,  G02B26/08 ,  B05D3/06

    CPC classification number: B81B3/0005 ,  B81C1/0096 ,  G02B26/0841 ,  B81B2201/042 ,  B81C2201/112 ,  B82Y10/00 ,  B82Y30/00

    Abstract: It is possible to use an oriented monolayer to limit the Van der Waals forces between two elements by passivation. The invention disclosed here details how to do so by building the device to be passivated, cleaning the surface to be passivated, activating the surface, heating it along with the material to be used as the monolayer, exposing a vapor of the material to the surface and evacuating the excess material, leaving only the monolayer.

    Abstract translation: 可以使用取向的单层通过钝化来限制两个元件之间的范德华力。 这里公开的发明详细说明如何通过构建要钝化的装置，清洁待钝化的表面，激活表面，将其与用作单层的材料一起加热，将材料的蒸气暴露于表面 并排空多余的材料，仅留下单层。

    마이크로 소자의 웨이퍼 레벨 보호 구조물과 이를 포함하는 마이크로 소자 및 이들의 제조방법
    258.
    发明公开
    마이크로 소자의 웨이퍼 레벨 보호 구조물과 이를 포함하는 마이크로 소자 및 이들의 제조방법 无效
    微型器件的水平钝化结构，包含该器件的微型器件及其制造方法

    公开(公告)号：KR1020130022612A

    公开(公告)日：2013-03-07

    申请号：KR1020110085320

    申请日：2011-08-25

    Applicant: 삼성전자주식회사

    Inventor： 이정엽

    IPC: H01L21/56

    CPC classification number: B81C1/00269 ,  B81C2201/112 ,  B81C2203/019 ,  B81C2203/036 ,  G02B3/12 ,  G02B26/0833 ,  Y10T428/23 ,  Y10T428/234 ,  H01L21/56 ,  H01L21/64 ,  H01L21/67

    Abstract: PURPOSE: A wafer level protection structure of a micro device, the micro device including the same, and manufacturing methods thereof are provided to efficiently protect a driving part of the micro device by installing a wafer level protection structure in a contact part with the driving part of the micro device. CONSTITUTION: An elastic spacer(32A) is formed on a first surface of a substrate(30). The elastic spacer is made of a silicon resin. The silicon resin is one of PMDS(Polydimethylsiloxane), PMPS(Polymethylphenylsiloxane), and PVS(Polyvinylsiloxane). A adhesion preventing layer(34) is formed on the first surface inside the spacer and is one of a metal layer, an oxide layer, and a nitride layer. The oxide layer includes one of Al2O3, TiO2, Cr2O3, Ta2O3, and LTO.

    Abstract translation: 目的：提供微型器件的晶片级保护结构，包括微型器件的微型器件及其制造方法，以通过将晶片级保护结构安装在与驱动部分的接触部分中来有效地保护微型器件的驱动部分 的微器件。 构成：在基板（30）的第一表面上形成弹性间隔件（32A）。 弹性间隔物由硅树脂制成。 硅树脂是PMDS（聚二甲基硅氧烷），PMPS（聚甲基苯基硅氧烷）和PVS（聚乙烯基硅氧烷）之一。 在隔离物的第一表面上形成有防粘附层（34），并且是金属层，氧化物层和氮化物层之一。 氧化物层包括Al 2 O 3，TiO 2，Cr 2 O 3，Ta 2 O 3和LTO中的一种。

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