公开(公告)号：JP2006322915A

公开(公告)日：2006-11-30

申请号：JP2005379671

申请日：2005-12-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JONG MOON ,  KIM NAE SOO ,  PYO CHEOL SIG ,  CHAE JONG SUK

IPC: G01S7/40 ,  G01S13/78

Abstract: PROBLEM TO BE SOLVED: To provide recognition distance measuring equipment between a tag and a reader. SOLUTION: Recognition distance measuring equipment between a tag and a reader includes an electron wave anechoic chamber configured that at least one or more unit cells, having electromagnetic waves, absorber is provided in line on an inner wall, an electromagnetic wave generator, arranged in the cell of the one side end of the electron wave anechoic chamber to emit electromagnetic waves through an antenna; and an electromagnetic wave measure which measures the electric field strength of the electromagnetic waves, discharged from the electromagnetic wave generator through an electric field probe moving in the electron wave anechoic chamber. Consequently, the accurate electric field strength can be measured from the angle and the distance between the tag and the reader. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2003174448A

公开(公告)日：2003-06-20

申请号：JP2001388300

申请日：2001-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHO YUNSOBU ,  JIN SENFUN ,  CHO SANREE ,  CHOI DESON ,  RO JONHYU ,  KIM HISUN ,  KIM TESUN

IPC: G06Q10/00 ,  G06F17/00 ,  G06F21/10 ,  G06Q50/00 ,  G06Q50/10 ,  G06Q50/26 ,  H04L9/32 ,  G06F17/60

Abstract: PROBLEM TO BE SOLVED: To verify the electronic signature of a paper document on an off-line. SOLUTION: In this method for generating the paper document of an electronic document signed with a public key and a system and method for verifying the electronic signature of the paper document, the format code of a digital electronic document signed with a public key, a service symbol image indicating an organization which issues the electronic document or a target service, a signer information via the public key information of a signer who has signed the electronic document, the signature value of the electronic document, and the contents of the electronic document are generated, and outputted to a paper medium. When a user needs it, the paper document is inputted, and whether or not the document format, service symbol image, signer information, and signature value are correct is confirmed, and the electronic signature of the paper document is verified on an off-line. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003163224A

公开(公告)日：2003-06-06

申请号：JP2002191424

申请日：2002-06-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE SEONG-JAE ,  CHO WON-JU ,  PARK KYOUNG WAN

IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/265 ,  H01L21/334 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS transistor having shallow source/drain junction regions. SOLUTION: A diffusion source film is formed on a semiconductor substrate 10 where gate patterns 18 are formed and then the same type or different type of impurities are implanted into the diffusion source film several times at different implant angles. As a result, the impurity concentration of the diffusion source film can be nonuniformly controlled so that damage to the crystal structure of the semiconductor substrate 10 does not occur and thus dislocation does not occur. Further, impurities contained in the diffusion source film having a nonuniform impurity concentration are diffused into the semiconductor substrate 10 by a solid phase diffusion method. Thus, the shallow source/drain junction regions composed of LDD regions and highly doped source/drain regions are formed by a self-alignment method. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003143197A

公开(公告)日：2003-05-16

申请号：JP2002089472

申请日：2002-03-27

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SON JIYEON ,  KIM JI EUN ,  PARK JUN SEOK ,  HAN DONG WON ,  KIM CHAE KYU

IPC: H04L12/28 ,  H04L12/721 ,  H04L29/06 ,  H04L29/08 ,  H04W40/34 ,  H04W48/16 ,  H04W76/00 ,  H04W84/12 ,  H04W88/18 ,  H04L12/56 ,  H04Q7/38

Abstract: PROBLEM TO BE SOLVED: To provide a method for dynamically selecting a radio TCP proxy position in a cable-radio composite network environment. SOLUTION: When a plurality of radio TCP proxies exist in the routine route of the cable-radio composite network environment, the movement property of a mobile host is measured with a network resident time by the radio TCP proxy of an applicable network whenever the mobile host is moved to another network (step 310). In the case of high movement property in the mobile host, the high-order radio TCP proxy on the routing route is activated (steps 312-324). When movement property is low, the radio TCP proxy of the newly moved network is activated (steps 312-318).

公开(公告)号：JP2003110601A

公开(公告)日：2003-04-11

申请号：JP2002148322

申请日：2002-05-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YON CHOI JEE ,  REOL YANG CHOONG ,  HA HONG HYUN ,  KIM HAE GEUN

IPC: H04B10/27 ,  H04B10/07 ,  H04B10/291 ,  H04L12/931 ,  H04Q11/00 ,  H04L12/56 ,  H04B10/02

Abstract: PROBLEM TO BE SOLVED: To provide a method and system capable of optical packet switching even in the case where optical data to enter to an optical packet switch is not in the form of packet but in the form of continuous data. SOLUTION: The optical switching method includes a step (401) of switching so that the number of input terminal is the same as the number of output terminal, a step (402) of detecting whether or not input terminals into which an optical packet is inputted, a step (403) of switching the optical packet into destination output terminals of the optical packet by the length of the optical packet when the optical packet has been inputted to one of input terminals in the step (402), a step (404) of determining whether or not there is other optical packets received from other input terminals and whose destination output terminal is an output terminal with the number switched at present when there are the input terminals into which the optical packet is not inputted in the steps above, a step (405) of switching the present input terminal to an idle output terminal when the result of the step (404) is YES, and a step (406) of maintaining the switched state of the present input terminal when the result of the step (404) is NO. All the inputted data independently of the packet form can be switched into output terminals without omission.

公开(公告)号：JP2003101018A

公开(公告)日：2003-04-04

申请号：JP2002197871

申请日：2002-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM HYUN-TAK ,  KANG KWANG-YONG

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/772 ,  H01L29/78 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To provide a field-effect transistor by utilizing abrupt metal-insulator phase transition. SOLUTION: The transistor is provided with a Mott's insulator 410 which is arranged on a substrate 400 and causes abrupt metal-insulator phase transition when a charged holes flow in; a ferroelectric film 420 which is arranged on the insulator and makes the charged holes flow into the Mott's insulator 410 when a constant voltage is applied; a gate electrode 430 which is arranged on the film and applies constant voltage to the ferroelectric film; a source electrode 440 which is electrically connected to the first surface of the Mott's insulator 410; and a drain electrode 450 which is electrically connected to the second surface of the Mott's insulator 410. The degree of integration and the switching speed of an element can be improved markedly, and appropriate holes for doping can be obtained at a low voltage, even if the film is not made thin largely.

公开(公告)号：JP2002324590A

公开(公告)日：2002-11-08

申请号：JP2001365096

申请日：2001-11-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GAN MANGU ,  PARK NAMUGYU ,  ZAN SUNHO

IPC: H01L31/04 ,  H01M14/00

Abstract: PROBLEM TO BE SOLVED: To provide a solar cell, a manufacturing method therefor, a solar cell module using it, and a cell window, where the interval between solar cells is minimized when solar cells are assembled in series or parallel, the power loss is minimized, and the contact between cells is maximized. SOLUTION: The solar cell comprises a first conductive substrate in which a negative electrode is formed in a certain area, deviated to one side, a second conductive substrate in which a positive electrode is formed in a certain area, deviated to the other side, a connecting/sealing means wherein the first conductive substrate and the second conductive substrate are connected together so that the positive electrode faces the negative electrode with a prescribed interval to overlap while a part of peripheral part where no negative electrode or positive electrode is formed does not overlap, to seal a region where the positive electrode faces the negative electrode, a first conductive adhesive formed at a part of the conductive substrate which does not overlap the second conductive substrate, and a second conductive adhesive formed at a part of the second conductive substrate which does not overlap the first conductive substrate.

公开(公告)号：JP2002289543A

公开(公告)日：2002-10-04

申请号：JP2001392750

申请日：2001-12-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM JEONG SOO ,  CHO HO SUNG ,  LEE KYU-SEOK

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01S5/026

Abstract: PROBLEM TO BE SOLVED: To grow a semiconductor epitaxial layer so that epitaxial growth characteristics can be made different for each growing portion by one time epitaxial growth. SOLUTION: This method is provided with a first step for growing a bridge- shaped dielectric membrane on a semiconductor wafer for producing a semiconductor integrated element, and a second step for growing the epitaxial layer having epitaxial growth characteristics different for each growing portion on the semiconductor wafer. By controlling the width and interval of the bridge- shaped dielectric membrane, the growing speed and thickness of the epitaxial layer to be grown are controlled. Even by one time epitaxial growth, the epitaxial layer having epitaxial growth characteristics different for each growing portion is grown.

公开(公告)号：JP2002222550A

公开(公告)日：2002-08-09

申请号：JP2001369230

申请日：2001-12-03

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM JEONG-YONG ,  PARK KANG HO

IPC: G01Q80/00 ,  G01Q60/06 ,  G01Q60/18 ,  G01Q60/24 ,  G01Q60/38 ,  G01Q70/06 ,  G11B7/085 ,  G11B7/09 ,  G11B7/12 ,  G11B7/122 ,  G11B7/1387 ,  G11B7/14 ,  G11B9/00 ,  G11B9/14 ,  G11B11/26 ,  G01N13/10

Abstract: PROBLEM TO BE SOLVED: To provide a high-speed/high-density optical information memory device using a one-dimensional multifunction/multiple probe array which records/ reproduces the high-density information on a disk-type recording medium by using multiple/multifunction proximity field probe techniques. SOLUTION: This device has the one-dimensionally arrayed multiple probe array and the recordable region on the disk medium is segmented to small tracks and large tacks divided by as much as the length of the multiple probe array. The movement of the multiple probe array between the small tracks and between the large tracks is performed by a double drive controller integrated with the high-resolution movement and the low-resolution movement, respectively.

公开(公告)号：JP2002133859A

公开(公告)日：2002-05-10

申请号：JP2000403355

申请日：2000-12-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YAN IRUSOKU ,  YU PYONGON ,  YU INGYU ,  I WONZE ,  ZO BYONIKU

IPC: G11C14/00 ,  G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a single transistor ferroelectric memory and a driving method therefor, by which reading/writing is made random. SOLUTION: A word line control part 52 and a source line control line 53 includes a decoder circuit for selecting a specific cell in accordance with an address inputted at the time of reading and writing and are for providing the selected cell with a prescribed voltage, and a reading voltage generating part 51 is for generating lots of reading voltages at the time of reading. A memory cell array is an arrangement of lots of word lines, bit lines, source lines, and ferro-electric transistors, and this memory cell array is provided with lots of well lines which are arranged in parallel to the bit lines and the source lines and form wells common to the columns, and are connected to the source lines of the columns but electrically isolated from the adjacent wells common to the columns.