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    Sacrificial layers made from aerogel for manufacturing MEMS devices
    277.
    发明公开
    Sacrificial layers made from aerogel for manufacturing MEMS devices 有权
    Herstellung von MEMS-Vorrichtungen，Opferschichten aus Airgelfürdie Herstellung von MEMS-Vorrichtungen

    公开(公告)号：EP2450309A2

    公开(公告)日：2012-05-09

    申请号：EP11187357.6

    申请日：2011-10-31

    Applicant: Honeywell International Inc.

    Inventor： Detry, James F.

    IPC: B81C1/00

    CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/0109

    Abstract: Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial silicon layer is coupled to the substrate through one or more gaps provided in the patterned layer of Aerogel material; and removing the Aerogel sacrificial layer by exposing the Aerogel sacrificial layer to a removal liquid.

    Abstract translation: 提供了用于在MEMS器件制造中处理牺牲层的系统和方法。 在一个实施例中，一种方法包括：将图案化的气凝胶材料层施加到基底上以形成气凝胶牺牲层; 在所述气凝胶牺牲层上施加至少一个非牺牲硅层，其中所述非牺牲硅层通过设置在所述图案化的气凝胶材料层中的一个或多个间隙耦合到所述衬底; 并通过将气凝胶牺牲层暴露于去除液体来除去气凝胶牺牲层。

    DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME
    279.
    发明授权
    DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 有权
    带竖设施排列的纳米织物制品及其制造方法

    公开(公告)号：EP1593164B1

    公开(公告)日：2010-06-30

    申请号：EP04710662.0

    申请日：2004-02-12

    Applicant: Nantero, Inc.

    Inventor： JAIPRAKASH, Venkatachalam, C. ,  WARD, Jonathan, W. ,  RUECKES, Thomas ,  SEGAL, Brent, M.

    IPC: G11C23/00 ,  G11C13/02 ,  G11C14/00 ,  H01H59/00 ,  B81B3/00

    CPC classification number: G11C23/00 ,  B81B2201/016 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094

    Abstract: Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

    Procédé de réalisation d'une structure MEMS comportant un élément mobile au moyen d'une couche sacrificielle hétérogène
    280.
    发明公开
    Procédé de réalisation d'une structure MEMS comportant un élément mobile au moyen d'une couche sacrificielle hétérogène 有权
    通过施加异质牺牲层制造具有可移动元件的MEMS结构的方法

    公开(公告)号：EP2138455A1

    公开(公告)日：2009-12-30

    申请号：EP09354023.5

    申请日：2009-06-04

    Applicant: Commissariat à l'Energie Atomique

    Inventor： Charvet, Pierre-Louis

    IPC: B81C1/00

    CPC classification number: B81C1/00801 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/053

    Abstract: Des premier et second matériaux sacrificiels sont déposés sur un substrat (1). Des premier et second motifs (2a, 6a) sont formés respectivement dans les premier et second matériaux sacrificiels. Le premier motif (2a) en premier matériau sacrificiel est disposé sur le second motif (6a) en un second matériau sacrificiel. Le premier motif laisse libre une zone de largeur prédéfinie sur la périphérie d'une face supérieure du second motif (6a). La couche active (3) recouvre au moins l'ensemble des parois latérales des premier et second motifs (2a, 6a) et ladite zone prédéfinie du second motif (6a). La zone active (3) est structurée pour permettre l'accès au premier matériau sacrificiel. Les premier et second matériaux sacrificiel sont éliminés sélectivement formant d'une structure mobile comportant une zone libre solidaire du substrat (1) par une zone d'accroche

    Abstract translation: 该方法包括沉积牺牲材料E.G. 钼，沉积另一牺牲材料之前E.G. 二氧化硅，和形成形成图案（2a）的后前材料的图案（6a）中，所以没有图案（图2a）被设置在图案（6a）中，其中，所述图案（2a）中自由地离开的预定区域 宽度与图案（6A）的上表面的周边上。 一组的图案和图案（6A）的预定义区域的壁是由在活性层（3）覆盖。 前者材料消除后者对材料后消除。

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