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    MAINTAINING STABLE OPTICAL OUTPUT OF SOLID STATE ILLUMINATION SYSTEM
    21.
    发明申请
    MAINTAINING STABLE OPTICAL OUTPUT OF SOLID STATE ILLUMINATION SYSTEM 审中-公开

    公开(公告)号：WO2019147763A2

    公开(公告)日：2019-08-01

    申请号：PCT/US2019/014890

    申请日：2019-01-24

    Applicant: EXCELITAS CANADA, INC. ,  EXCELITAS TECHNOLOGIES CORP.

    Inventor： SORENSEN, Erik ,  MACDONALD, Douglas ,  CONSTANTINOU, Paul ,  WANG, Yong

    IPC: G01R31/26

    Abstract: A method is disclosed for maintaining a desired optical output in a solid state illumination device, where the device is configured to accommodate multiple light emitting diodes (LEDs) and to combine light from the LEDs to produce a single optical output. The method includes testing the LEDs before adding them into the device. The testing produces characterizing information that describes how one or more optical properties (e.g., optical power and/or peak wavelength) of the tested LED change with temperature. This characterizing information is stored in a computer-based memory of the device, and the tested LED is added (connected) into the device. Then, during operation, temperature sensors measure a temperature associated with each respective LED in the device, and electrical current to one or more of the LEDs can be adjusted based on the measured temperatures associated with each LED and its stored characterizing information.

    TUNABLE VCSEL WITH STRAIN COMPENSATED SEMICONDUCTOR DBR
    25.
    发明申请
    TUNABLE VCSEL WITH STRAIN COMPENSATED SEMICONDUCTOR DBR 审中-公开

    公开(公告)号：WO2022082203A1

    公开(公告)日：2022-04-21

    申请号：PCT/US2021/071874

    申请日：2021-10-14

    Applicant: EXCELITAS TECHNOLOGIES CORP.

    Inventor： KUZNETSOV, Mark E.

    IPC: H01S5/183

    Abstract: Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs / AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low refractive index L-layers. The tensile strain of AlGaAsP L-layer compensates compressive strain of InGaAs H-layer and lowers the cumulative strain of the multilayer DBR structure. Another option is the InGaAsN(Sb) / AlGaAsP material system, where both types of layers can be lattice matched to GaAs. It uses indium In and nitrogen N, and possibly antimony Sb, to get independent control of strain and bandgap, and thus refractive index, of dilute nitride InGaAsN(Sb) H-layers, with lower bandgap and higher refractive index than starting GaAs. Using expanded material system enables reliable DBR mirrors with higher reflectivity and spectral bandwidth and tunable VCSELs with wider tuning range.

    LASER SUSTAINED PLASMA AND ENDOSCOPY LIGHT SOURCE
    27.
    发明申请
    LASER SUSTAINED PLASMA AND ENDOSCOPY LIGHT SOURCE 审中-公开

    公开(公告)号：WO2020118010A1

    公开(公告)日：2020-06-11

    申请号：PCT/US2019/064608

    申请日：2019-12-05

    Applicant: EXCELITAS TECHNOLOGIES CORP.

    Inventor： BLONDIA, Rudi

    IPC: H01J65/04 ,  H01J61/02 ,  H01J61/30 ,  H01J61/54 ,  H01J61/16

    Abstract: An illumination source includes a laser driver unit configured to emit a plasma sustaining beam. An ingress collimator receives the plasma sustaining beam and produces a collimated ingress beam. A focusing optic receives the collimated ingress beam and produce a focused sustaining beam. A sealed lamp chamber contains an ionizable media that, once ignited, forms a high intensity light emitting plasma having a waist size smaller than 150 microns. The sealed lamp chamber further includes an ingress window configured to receive the focused sustaining beam and an egress window configured to emit the high intensity light. An ignition source is configured to ignite the ionizable media, and an exit fiber is configured to receive and convey the high intensity light. The high intensity light is white light with a black body spectrum, and the exit fiber has a diameter in the range of 200-500 micrometers.

    HIGH SPEED SWITCHING CIRCUIT CONFIGURATION
    28.
    发明申请
    HIGH SPEED SWITCHING CIRCUIT CONFIGURATION 审中-公开

    公开(公告)号：WO2020092296A1

    公开(公告)日：2020-05-07

    申请号：PCT/US2019/058445

    申请日：2019-10-29

    Applicant: EXCELITAS CANADA, INC. ,  EXCELITAS TECHNOLOGIES CORP.

    Inventor： GODFREY, Lawrence

    IPC: H03K17/687 ,  H05K1/02 ,  H05K1/18 ,  H03K17/0416

    Abstract: A low inductance electrical switching circuit arrangement (200), includes a two sided substrate (202) with a plurality of through-substrate electrical vias (220, 222). A capacitor (212) is arranged on the substrate first side above a first via (220), and an electrical sink (214) is arranged on the first side above a second via (222). A switching component (216) configured to produce a plurality of current pulses is arranged on the substrate second side below the first and second via.

    QUAD FLAT NO-LEADS PACKAGE FOR SIDE EMITTING LASER DIODE
    29.
    发明申请
    QUAD FLAT NO-LEADS PACKAGE FOR SIDE EMITTING LASER DIODE 审中-公开

    公开(公告)号：WO2020092287A1

    公开(公告)日：2020-05-07

    申请号：PCT/US2019/058432

    申请日：2019-10-29

    Applicant: EXCELITAS CANADA, INC. ,  EXCELITAS TECHNOLOGIES CORP.

    Inventor： GODFREY, Lawrence

    IPC: H01S5/022

    Abstract: A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.

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