SHIELDED DUAL SUBSTRATE MEMS PLATE SWITCH AND METHOD OF MANUFACTURE

    公开(公告)号:US20190333728A1

    公开(公告)日:2019-10-31

    申请号:US16392662

    申请日:2019-04-24

    Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The second substrate may have semiconductor integrated circuits formed thereon. The second substrate may also have a shielding layer formed thereon, such as to improve the impedance characteristics of the device.

    Microfabricated fiber optic platform

    公开(公告)号:US10302871B2

    公开(公告)日:2019-05-28

    申请号:US15974516

    申请日:2018-05-08

    Abstract: Described here is a platform for supporting a fiber optic cable. The platform may be made on a silicon wafer using silicon lithographic processing techniques. The platform may include a substrate having a top planar surface; a trench formed in the substrate in the top planar surface and dimensioned to accept a fiber optic cable carrying radiation; and a reflecting surface formed in the top planar surface, wherein this reflecting surface is configured to reflect the radiation by total internal reflection, wherein the reflecting surface is configured to direct radiation travelling in a first direction into a second direction, substantially orthogonal to the first direction.

    DEVICE WITH SEPARATION LIMITING STANDOFF
    29.
    发明申请
    DEVICE WITH SEPARATION LIMITING STANDOFF 审中-公开
    具有分离限制的设备

    公开(公告)号:US20170062165A1

    公开(公告)日:2017-03-02

    申请号:US15232871

    申请日:2016-08-10

    CPC classification number: H01H59/0009 H01H2059/0072

    Abstract: An MEMS device, having two substantially parallel surfaces are separated by an initial distance. At least one of the surfaces includes a raised feature that limits the gap between the surfaces to less than the initial distance when an actuating voltage is applied. In some embodiments, the raised feature limits the gap to about 66% of the initial distance.

    Abstract translation: 具有两个基本上平行的表面的MEMS器件被分开初始距离。 至少一个表面包括凸起特征,其在施加致动电压时将表面之间的间隙限制为小于初始距离。 在一些实施例中,凸起特征将间隙限制为初始距离的约66%。

    Anodic Bonding of Dielectric Substrates
    30.
    发明申请
    Anodic Bonding of Dielectric Substrates 有权
    介质基板的阳极接合

    公开(公告)号:US20160304335A1

    公开(公告)日:2016-10-20

    申请号:US15098353

    申请日:2016-04-14

    Inventor: Benedikt ZEYEN

    Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

    Abstract translation: 具有图案化电介质阻挡层和可氧化金属层的第一富离子电介质基片阳极结合到第二富离子电介质基片上。 为了结合基板,可氧化的金属层被氧化。 电介质阻挡层可以抑制这些离子迁移到粘结线,否则可能会损害粘结强度。 因此,当接合两个基板时,在晶片之间保持牢固的结合。

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