公开(公告)号：EP1912889B1

公开(公告)日：2015-09-02

申请号：EP06764923.6

申请日：2006-07-12

Applicant: SPP Process Technology Systems UK Limited

Inventor： APPLEYARD, Nicholas John ,  POWELL, Kevin

IPC: B81C1/00 ,  H01L21/3065 ,  H01L21/00 ,  B08B7/00

CPC classification number: B81C1/00547 ,  H01L21/67069

公开(公告)号：EP2362003A3

公开(公告)日：2011-09-07

申请号：EP10275131.0

申请日：2010-12-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Giles, Katherine ,  Price, Andrew ,  Burgess, Stephen Robert ,  Archard, Daniel Thomas

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

Abstract: This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1.

Abstract translation: 本发明涉及一种在室内使用等离子体增强化学气相沉积（PECVD）在低于250℃的温度下沉积无机SiO 2膜的方法，该室包括供应原硅酸四乙酯（TEOS）和O 2或其来源作为前体与O 2 / TEOS之比在15：1和25：1之间。

公开(公告)号：EP2333807A2

公开(公告)日：2011-06-15

申请号：EP10275127.8

申请日：2010-12-14

Applicant: SPP Process Technology Systems UK Limited

Inventor： Macneil, John ,  Bennet, Paul George

IPC: H01J27/02

CPC classification number: H01J27/022 ,  H01J37/24 ,  H01J2237/0206 ,  H01J2237/08 ,  H01J2237/3146

Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pulsed power to the grid (13) to extract the ions.

Abstract translation: 本发明涉及一种用于非导电靶（14）的离子束源（10），其包括用于提取离子的栅极（13）和用于向栅极（13）提供脉冲功率以提取离子的电源。