21.
    发明专利
    未知

    公开(公告)号:DE60201599D1

    公开(公告)日:2004-11-18

    申请号:DE60201599

    申请日:2002-05-21

    Abstract: Multi-layer mirror for radiation with a wavelength in the wavelength range between 0.1 nm and 30 nm (the so-called XUV range), comprising a stack of thin films substantially comprising scattering particles which scatter the radiation, which thin films are separated by separating layers with a thickness in the order of magnitude of the wavelength of the radiation, which separating layers substantially comprise non-scattering particles which do not scatter the radiation, wherein the non-scattering particles are substantially particles of lithium (Li), and method for manufacturing such a mirror.

    Nucleotide assay affinity sensor on the basis of induced deflection of light (DIANA)

    公开(公告)号:NL9102052A

    公开(公告)日:1993-07-01

    申请号:NL9102052

    申请日:1991-12-09

    Abstract: The invention relates to an instrument for measuring a biochemical reaction by measuring the deflection of light in a planar optical waveguide. This deflection results from the biochemical reaction taking place and is caused by the ligands to be detected growing with a nonuniform layer thickness on the waveguide surface. This can be caused by the receptor layer being applied in such a way to the waveguide surface that a chemical gradient results, the gradient being perpendicular to the propagation direction of the light passing through the waveguide, while said receptor layer is uniform in optical terms (layer thickness, refraction index profile). An alternative possibility, however, is for the receptor layer to be uniform both in optical and chemical terms but for the ligands to be supplied nonuniformly (flow, diffusion). In both cases the result is growth of a nonuniform ligand layer, resulting in a deflection of the light being propagated through the waveguide. The major advantage of this deflection sensor is that it is insensitive to changes in refractive index in the liquid in which the instrument is placed.

    26.
    发明专利
    未知

    公开(公告)号:NL8701530A

    公开(公告)日:1989-01-16

    申请号:NL8701530

    申请日:1987-06-30

    Abstract: A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice the plasma flows from its source (13) to a treatment chamber (3). The plasma source is first flushed through with a flushing gas and when this has passed the cathodes (6), the reactant gas is fed into the plasma generator. The reactor used in this process is also described.

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