公开(公告)号：KR100657913B1

公开(公告)日：2006-12-14

申请号：KR1020040095548

申请日：2004-11-20

Applicant: 삼성전자주식회사

Inventor： 정수환 ,  박완준 ,  박종봉 ,  고주혜

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  Y10S977/842

Abstract: 상온 및 상압에서의 단일벽 탄소나노튜브 합성 방법에 관해 개시되어 있다. 개시된 본 발명은 탄소나노튜브 합성에 촉매로써 작용하는 촉매입자가 함유된 유기 금속 화합물과 탄소 공급원을 포함하는 혼합액을 형성하는 제1 단계와, 표면상에서 상기 탄소나노튜브가 합성되는 지지체를 상기 혼합액에 첨가하는 제2 단계와, 상기 지지체가 첨가된 상기 혼합액에 초음파를 조사하는 제3 단계를 포함하는 것을 특징으로 하는 단일벽 탄소나노튜브 합성 방법을 제공한다.

公开(公告)号：KR1020060109718A

公开(公告)日：2006-10-23

申请号：KR1020050032001

申请日：2005-04-18

Applicant: 삼성전자주식회사

Inventor： 배준수 ,  박종봉

IPC: H01L27/105

CPC classification number: H01L43/12 ,  B82Y10/00 ,  H01L27/228

Abstract: A method for forming a magnetic memory device is provided to improve an etch selectivity between a removed portion of an upper magnetic layer and a tunnel barrier layer by oxidizing selectively the upper magnetic layer using a capping conductive pattern as an oxidation mask. A lower magnetic layer, a tunnel barrier layer(130a) and an upper magnetic layer are sequentially formed on a semiconductor substrate(100). A capping conductive pattern is formed on a predetermined region of the upper magnetic layer. An oxidation is performed on the upper magnetic layer by using the capping conductive pattern as an oxidation mask. At this time, an upper magnetic pattern(132a) is formed under the capping conductive pattern. The tunnel barrier layer and the upper magnetic pattern are selectively exposed to the outside by removing completely an oxidized portion from the upper magnetic layer. The upper magnetic layer contains at least one selected from a group consisting of Fe, Ni, and Co.

Abstract translation: 提供一种用于形成磁存储器件的方法，以通过使用封盖导电图案作为氧化掩模来选择性地氧化上部磁性层来改善上部磁性层的去除部分和隧道势垒层之间的蚀刻选择性。 在半导体衬底（100）上依次形成下磁性层，隧道势垒层（130a）和上层磁性层。 在上磁性层的预定区域上形成封盖导电图案。 通过使用封盖导电图案作为氧化掩模，在上部磁性层上进行氧化。 此时，在封盖导电图案下方形成上磁性图案（132a）。 隧道势垒层和上磁性图案通过从上部磁性层完全去除氧化部分而选择性地暴露于外部。 上磁性层含有选自Fe，Ni和Co中的至少一种

公开(公告)号：KR1020050075885A

公开(公告)日：2005-07-25

申请号：KR1020040003253

申请日：2004-01-16

Applicant: 가부시끼가이샤 히다치 세이사꾸쇼 ,  삼성전자주식회사 ,  가부시키가이샤 히다치 하이테크놀로지즈

Inventor： 박경수 ,  카지가즈토시 ,  박종봉 ,  쇼헤이테라다 ,  타쯔미히라노 ,  송세안

IPC: G01N1/28 ,  B82Y15/00 ,  B82Y35/00

CPC classification number: G01N23/083 ,  H01J2237/2516 ,  B82B3/0047 ,  B82B3/0085 ,  G01N23/20091 ,  G01N2001/282 ,  Y10S977/881

Abstract: A standard sample for transmission electron microscopy (TEM) elemental mapping and a TEM elemental mapping method using the same are provided. The standard sample includes a substrate; a first crystalline thin film containing heavy atoms formed on the substrate; a first amorphous thin film having oxides or nitrides containing light atoms and having a thickness of 1-5 nm or 6-10 nm formed on the first crystalline thin film; a second crystalline thin film containing heavy atoms formed on the first amorphous thin film. The standard sample can be used to correct TEM, EDS and EELS mapping results of a multi-layered nanometer-sized thin film and to optimize mapping conditions.