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    탄소나노튜브를 이용한 개스 센서 및 그 측정방법
    1.
    发明公开
    탄소나노튜브를 이용한 개스 센서 및 그 측정방법 有权
    使用碳纳米管的气体传感器和使用其的测量方法

    公开(公告)号：KR1020070096121A

    公开(公告)日：2007-10-02

    申请号：KR1020060001389

    申请日：2006-01-05

    Applicant: 삼성전자주식회사

    Inventor： 강동훈 ,  박완준 ,  박찬진

    IPC: G01N27/407 ,  G01N27/12 ,  B82B1/00

    CPC classification number: G01N33/0054 ,  B82Y15/00 ,  G01N33/005 ,  Y02A50/246 ,  Y10S977/92

    Abstract: A gas sensor using a carbon nano tube and a measuring method thereof are provided to detect a kind and concentration of gas simultaneously. A gas sensor using a carbon nano tube(20) comprises first and second electrodes(23), the carbon nano tube(24), an optical source(40), and a current system(30). The first and second electrodes are separated and formed on a substrate(21). The carbon nano tube is used to connect the first and second electrodes on the substrate. The optical source is installed at an upper part of the carbon nano tube. The current system is installed to detect a current between the first and second electrodes. The carbon nano tube is grown from a catalyst formed on the substrate, to connect the first and second electrodes electrically. A measuring step of the gas sensor includes a step of measuring the current passing through the carbon nano tube, separately by giving voltage to the electrode and the optical source for predetermined time.

    Abstract translation: 提供使用碳纳米管的气体传感器及其测量方法来同时检测气体的种类和浓度。 使用碳纳米管（20）的气体传感器包括第一和第二电极（23），碳纳米管（24），光源（40）和电流系统（30）。 第一和第二电极被分离并形成在基板（21）上。 碳纳米管用于连接基板上的第一和第二电极。 光源安装在碳纳米管的上部。 安装当前系统以检测第一和第二电极之间的电流。 碳纳米管从形成在基板上的催化剂生长，以电连接第一和第二电极。 气体传感器的测量步骤包括分别通过给予电极和光源预定时间的电压来测量通过碳纳米管的电流的步骤。

    산화아연 나노와이어의 제조방법 및 그로부터 제조된나노와이어
    2.
    发明公开
    산화아연 나노와이어의 제조방법 및 그로부터 제조된나노와이어 有权
    制造氧化锌纳米微粒的方法及其制备的纳米微粒

    公开(公告)号：KR1020070072726A

    公开(公告)日：2007-07-05

    申请号：KR1020060000164

    申请日：2006-01-02

    Applicant: 삼성전자주식회사

    Inventor： 민요셉 ,  배은주 ,  박완준

    IPC: B82B3/00 ,  B82Y40/00

    CPC classification number: C01G9/02 ,  B82Y30/00 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/64 ,  Y10S977/762 ,  Y10S977/81 ,  Y10S977/811

    Abstract: A method for manufacturing zinc oxide(ZnO) nano-wires comprising formation of ZnO seed layer is provided to produce the nano-wires with smaller diameter than typical nano-wires and high density by forming the ZnO seed layer containing a large amount of hydroxyl groups then growing the nano-wires on the seed layer. The method comprises the steps of: forming a ZnO seed layer(2) containing more than 50% of hydroxyl groups on a substrate(1); and growing ZnO nano-wires on the ZnO seed layer. The ZnO seed layer is ZnO seed film formed by vaporizing Zn raw material and an oxidation raw material prepared of H2O or H2O2. The ZnO seed layer is prepared by forming the ZnO seed film on the substrate then surface treating the surface of the ZnO seed film with hydroxyl group containing material. The surface treatment is performed by reacting the ZnO seed film in a water solution containing hydroxyl groups.

    Abstract translation: 提供了一种制造包含ZnO种子层形成的氧化锌（ZnO）纳米线的方法，以通过形成含有大量羟基的ZnO种子层来制造具有比典型纳米线更小的直径和高密度的纳米线 然后在种子层上生长纳米线。 该方法包括以下步骤：在衬底（1）上形成含有多于50％的羟基的ZnO种子层（2）; 并在ZnO种子层上生长ZnO纳米线。 ZnO种子层是通过蒸发Zn原料和由H 2 O或H 2 O 2制备的氧化原料形成的ZnO种子膜。 通过在衬底上形成ZnO种子膜，然后用含羟基的材料对ZnO种子膜的表面进行表面处理来制备ZnO种子层。 表面处理通过使ZnO种子膜在含有羟基的水溶液中反应来进行。

    탄소나노튜브의 탄화질 불순물의 정제방법
    4.
    发明公开
    탄소나노튜브의 탄화질 불순물의 정제방법 有权
    在碳纳米管中净化碳水化合物的方法

    公开(公告)号：KR1020070000683A

    公开(公告)日：2007-01-03

    申请号：KR1020050056228

    申请日：2005-06-28

    Applicant: 삼성전자주식회사

    Inventor： 배은주 ,  민요셉 ,  박완준

    IPC: B82B3/00 ,  B82B1/00 ,  C01B31/02

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/17 ,  H01J2201/30469 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/845

    Abstract: A method of selectively removing carbonaceous impurities from sulfur combined CNT is provided to eliminate amorphous carbon fraction from CNT under vacuum condition in sealed space by sulfidation of carbon impurities from the CNT synthesized in a semiconductor device. The method comprises: a first step of preparing sulfur and carbon nano-tube in a closed space; and a second step of removing impurities adhered to the carbon nano-tube by sulfidation. The second step includes further a step of heating the impurities of the carbon nano-tube up to more than temperature of sulfidation. The heating step is performed by maintaining the closed space at about 300deg.C for more than 30 minutes. The second step includes further a step of vacuum formation in the closed space by completely exhausting air out of the space before the heating step. Alternatively, the method comprises: a first step of preparing a device containing sulfur and carbon nano-tube; and a second step of removing impurities on surface of the carbon nano-tube.

    Abstract translation: 提供从硫组合CNT中选择性除去含碳杂质的方法，以在密封空间中通过在半导体器件中合成的CNT的碳杂质硫化来在真空条件下从CNT消除无定形碳馏分。 该方法包括：在封闭空间中制备硫和碳纳米管的第一步骤; 以及通过硫化除去粘附到碳纳米管上的杂质的第二步骤。 第二步还包括将碳纳米管的杂质加热至多于硫化温度的步骤。 加热步骤通过将封闭空间保持在约300℃下进行30多分钟。 第二步骤还包括通过在加热步骤之前将空气从空间中完全排出而在封闭空间中形成真空的步骤。 或者，该方法包括：制备含有硫和碳纳米管的装置的第一步骤; 以及除去碳纳米管表面上的杂质的第二步骤。

    상온 및 상압에서의 단일벽 탄소나노튜브 합성 방법
    5.
    发明授权
    상온 및 상압에서의 단일벽 탄소나노튜브 합성 방법 有权
    在室温和大气压下合成单壁碳纳米管的方法

    公开(公告)号：KR100657913B1

    公开(公告)日：2006-12-14

    申请号：KR1020040095548

    申请日：2004-11-20

    Applicant: 삼성전자주식회사

    Inventor： 정수환 ,  박완준 ,  박종봉 ,  고주혜

    IPC: B82B3/00 ,  B82Y40/00

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  Y10S977/842

    Abstract: 상온 및 상압에서의 단일벽 탄소나노튜브 합성 방법에 관해 개시되어 있다. 개시된 본 발명은 탄소나노튜브 합성에 촉매로써 작용하는 촉매입자가 함유된 유기 금속 화합물과 탄소 공급원을 포함하는 혼합액을 형성하는 제1 단계와, 표면상에서 상기 탄소나노튜브가 합성되는 지지체를 상기 혼합액에 첨가하는 제2 단계와, 상기 지지체가 첨가된 상기 혼합액에 초음파를 조사하는 제3 단계를 포함하는 것을 특징으로 하는 단일벽 탄소나노튜브 합성 방법을 제공한다.

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